Abstract: An optical integrated device and a preparation method therefor.

Abstract: An optical coupling system and a preparation method therefor are provided. The preparation method for the optical coupling system includes: providing a substrate, mounting an optical chip on the substrate, and forming a first intermediate member; fixing an optical fiber in a fixing structure, forming an optical fiber assembly; providing a connection assembly that includes a chip-side connector and an optical fiber-side connector; fixedly connecting the optical fiber-side connector to the optical fiber assembly, connecting the other end of the optical fiber-side connector to the chip-side connector, and forming a second intermediate member; adjusting the position of the second intermediate member relative to the first intermediate member; and when the optical chip and the optical fiber achieve optimal optical coupling, stopping the adjustment of the relative position, and fixing the chip-side connector to the substrate.

Abstract: The present application provides a physics-enhanced data-driven method and device for intelligent structural design of shear wall building, and the method includes: obtaining an architectural design image and a basic design condition text to be processed; inputting the architectural design image and the basic design condition text into a structural design model, and obtaining a structural design image; the structural design model being obtained by performing a structural design image generation capability training and a physical performance optimization training for a physics-enhanced data-driven generative adversarial network; and vectorizing the structural design image and the architectural design image to obtain a structural design result of shear wall building. The physics-enhanced data-driven method and device for intelligent structural design of shear wall building provided by the present application improve the efficiency and the reliability of structural design.

Abstract: An external cavity laser and a tuning method therefor are provided. The external cavity laser includes a gain chip, and a tunable reflector. The tunable reflector includes a main waveguide, a beam splitter, a first branch waveguide, a first photonic crystal modulator, a second branch waveguide, and a second photonic crystal modulator. The beam splitter is configured to equally split the optical signal transmitted by the main waveguide into a first optical signal and a second optical signal and is configured to transmit the first optical signal to a first branch waveguide and the second optical signal to a second branch waveguide. A first photonic crystal modulator is configured to tune the first optical signal transmitted by the first branch waveguide. A second photonic crystal modulator is configured to tune the second optical signal transmitted by the second branch waveguide.

Abstract: The disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The disclosure applies to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method performed by a network-side control node in mobile communication system is provided. The method includes acquiring information related to cooperative scheduling corresponding to a base station, determining configuration information for cooperative scheduling on traffics in overlapped beam coverage areas associated with a plurality of base stations including the base station, based on the information related to cooperative scheduling, and transmitting, to the base station, the configuration information.

Abstract: The disclosure relates to a 5th generation (5G) or 6th generation (6G) communication system for supporting a higher data transmission rate. The disclosure relates to the field of communication. A method and device for beam selection are provided. The method for beam selection includes acquiring network related information and/or user equipment (UE) related information for the beam selection, determining at least one first candidate beam corresponding to the UE among beams of a base station based on the acquired information, and determining a serving beam of the UE based on the determined at least one first candidate beam.

Abstract: A method for the scheme design of shear wall structure based on a generative adversarial network includes: obtaining an architectural drawing; extracting key elements from the architectural drawing, coding the key elements by colors, and generating image features; inputting the image features into a pre-trained structural-design-oriented generative adversarial network model for processing to generate a structural drawing.

Abstract: A semiconductor device may include the following elements: a fin member including a first doped portion, a second doped portion, and a semiconductor portion positioned between the first doped portion and the second doped portion; a composite structure including a conductor and an insulator positioned between the conductor and the semiconductor portion in a first direction; a first spacer having a first dielectric constant and positioned close to the second doped portion; a second spacer having a second dielectric constant and positioned close to the first doped portion; and a third spacer having a third dielectric constant. The second spacer is positioned between the third spacer and the fin member in the first direction. The composite structure is positioned between the first spacer and the second spacer. The first dielectric constant is less than at least one of the second dielectric constant and the third dielectric constant.

Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate; forming gate structures over the base substrate; forming source/drain doping regions in the base substrate at two sides of each of the gate structures; forming an interlayer dielectric layer over the base substrate and the source/drain doping regions; forming a mask layer having a plurality of first openings there-through and over the interlayer dielectric layer, the first opening having a first length; performing a surface treatment process to remove portions of the mask layer from the first openings and to increase the first length of the first openings; forming contact through holes passing through the interlayer dielectric layer and exposing the source/drain doping regions using the mask layer with the first openings having the increased first length as an etching mask; and forming a contact via in each of the contact through holes.

Abstract: A semiconductor device may include the following elements: a fin member including a first doped portion, a second doped portion, and a semiconductor portion positioned between the first doped portion and the second doped portion; a composite structure including a conductor and an insulator positioned between the conductor and the semiconductor portion in a first direction; a first spacer having a first dielectric constant and positioned close to the second doped portion; a second spacer having a second dielectric constant and positioned close to the first doped portion; and a third spacer having a third dielectric constant. The second spacer is positioned between the third spacer and the fin member in the first direction. The composite structure is positioned between the first spacer and the second spacer. The first dielectric constant is less than at least one of the second dielectric constant and the third dielectric constant.

Abstract: A method of reducing heart failure or preventing sudden cardiac death in a subject in need thereof is carried out by administering a composition comprising a compound that increases cellular level of Sarco/endoplasmic reticulum Ca2+-ATPase 2a (SERCA2a). The invention represents a significant breakthrough in the treatment or prevention of chronic heart failure. The invention is based upon the discovery that a Mifepristone molecule increases the cellular level of SERCA2a protein.

Abstract: An electric connection structure includes a metal element (1) with an axle cavity and a metal element (2) with an axle head. The cross section edges of the hinge faces between the axle cavity and the axle head are in gradual spiral line type. As both the metal elements (1, 2) have larger corner, the hinge faces have larger space which will disappear when the metal elements rotate to be approximately horizontal, and the axle head and the axle cavity will attain compression force to be tightly combined in continuous rotation of the metal elements so as to have a large electric contact face, tight contact, non-loosen, and free maintenance.

Abstract: An electric connection structure includes a metal element (1) with an axle cavity and a metal element (2) with an axle head. The cross section edges of the hinge faces between the axle cavity and the axle head are in gradual spiral line type. As both the metal elements (1, 2) have larger corner, the hinge faces have larger space which will disappear when the metal elements rotate to be approximately horizontal, and the axle head and the axle cavity will attain compression force to be tightly combined in continuous rotation of the metal elements so as to have a large electric contact face, tight contact, non-loosen, and free maintenance.