Patents by Inventor Zhebo Chen

Zhebo Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955603
    Abstract: Set forth herein are electrolyte compositions that include both organic and inorganic constituent components and which are suitable for use in rechargeable batteries. Also set forth herein are methods and systems for making and using these composite electrolytes.
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: April 9, 2024
    Assignee: QuantumScape Battery, Inc.
    Inventors: Kim Van Berkel, Tim Holme, Mohit Singh, Amal Mehrotra, Zhebo Chen, Kian Kerman, Wes Hermann, William Hudson
  • Patent number: 11916200
    Abstract: The disclosure herein relates to rechargeable batteries and solid electrolytes therefore which include lithium-stuffed garnet oxides, for example, in a thin film, pellet, or monolith format wherein the density of defects at a surface or surfaces of the solid electrolyte is less than the density of defects in the bulk. In certain disclosed embodiments, the solid-state anolyte, electrolyte, and catholyte thin films, separators, and monoliths consist essentially of an oxide that conducts Li+ ions. In some examples, the disclosure herein presents new and useful solid electrolytes for solid-state or partially solid-state batteries. In some examples, the disclosure presents new lithium-stuffed garnet solid electrolytes and rechargeable batteries which include these electrolytes as separators between a cathode and a lithium metal anode.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: February 27, 2024
    Inventors: David Cao, Cheng-Chieh Chao, Zhebo Chen, Lei Cheng, Niall Donnelly, Wes Hermann, Tim Holme, Tommy Huang, Kian Kerman, Yang Li, Harsh Maheshwari
  • Patent number: 11881596
    Abstract: Set forth herein are electrochemical cells which include a negative electrode current collector, a lithium metal negative electrode, an oxide electrolyte membrane, a bonding agent layer, a positive electrode, and a positive electrode current collector. The bonding agent layer advantageously lowers the interfacial impedance of the oxide electrolyte at least at the positive electrode interface and also optionally acts as an adhesive between the solid electrolyte separator and the positive electrode interface. Also set forth herein are methods of making these bonding agent layers including, but not limited to, methods of preparing and depositing precursor solutions which form these bonding agent layers. Set forth herein, additionally, are methods of using these electrochemical cells.
    Type: Grant
    Filed: August 16, 2022
    Date of Patent: January 23, 2024
    Assignee: QuantumScape Battery, Inc.
    Inventors: Zhebo Chen, Niall Donnelly, Tim Holme, Deepika Singh
  • Publication number: 20240006667
    Abstract: The disclosure herein relates to rechargeable batteries and solid electrolytes therefore which include lithium-stuffed garnet oxides, for example, in a thin film, pellet, or monolith format wherein the density of defects at a surface or surfaces of the solid electrolyte is less than the density of defects in the bulk. In certain disclosed embodiments, the solid-state anolyte, electrolyte, and catholyte thin films, separators, and monoliths consist essentially of an oxide that conducts Li+ ions. In some examples, the disclosure herein presents new and useful solid electrolytes for solid-state or partially solid-state batteries. In some examples, the disclosure presents new lithium-stuffed garnet solid electrolytes and rechargeable batteries which include these electrolytes as separators between a cathode and a lithium metal anode.
    Type: Application
    Filed: July 7, 2023
    Publication date: January 4, 2024
    Inventors: David CAO, Cheng-Chieh CHAO, Zhebo CHEN, Lei CHENG, Niall DONNELLY, Wes Hermann, Timothy HOLME, Tommy HUANG, Kian KERMAN, Yang LI, Harsh MAHESHWARI
  • Publication number: 20240003000
    Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.
    Type: Application
    Filed: May 23, 2023
    Publication date: January 4, 2024
    Inventors: Mingwei ZHU, Zihao YANG, Nag B. PATIBANDLA, Ludovic GODET, Yong CAO, Daniel Lee DIEHL, Zhebo CHEN
  • Patent number: 11855251
    Abstract: Set forth herein are compositions comprising A·(LiBH4)·B·(LiX)·C·(LiNH2), wherein X is fluorine, bromine, chloride, iodine, or a combination thereof, and wherein 0.1?A?3, 0.1?13?4, and 0?C?9 that are suitable for use as solid electrolyte separators in lithium electrochemical devices. Also set forth herein are methods of making A·(LiBH4)·B·(LiX)·C·(LiNH2) compositions. Also disclosed herein are electrochemical devices which incorporate A·(LiBH4)·B·(LiX)·C·(LiNH2) compositions and other materials.
    Type: Grant
    Filed: January 10, 2023
    Date of Patent: December 26, 2023
    Assignee: QUANTUMSCAPE BATTERY, INC.
    Inventors: Zhebo Chen, Tim Holme, Marie Mayer, Nick Perkins, Eric Tulsky, Cheng-Chieh Chao, Christopher Dekmezian, Shuang Li
  • Patent number: 11802349
    Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: October 31, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Zihao Yang, Mingwei Zhu, Nag B. Patibandla, Yong Cao, Shumao Zhang, Zhebo Chen, Jean Lu, Daniel Lee Diehl, Xianmin Tang
  • Publication number: 20230345846
    Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Application
    Filed: March 1, 2023
    Publication date: October 26, 2023
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • Publication number: 20230329125
    Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Application
    Filed: May 22, 2023
    Publication date: October 12, 2023
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • Patent number: 11778926
    Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: October 3, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Mingwei Zhu, Zihao Yang, Nag B. Patibandla, Ludovic Godet, Yong Cao, Daniel Lee Diehl, Zhebo Chen
  • Publication number: 20230282873
    Abstract: Set forth herein are compositions comprising A·(LiBH4)·B·(LiX)·C·(LiNH2), wherein X is fluorine, bromine, chloride, iodine, or a combination thereof, and wherein 0.1?A?3, 0.1?B?4, and 0?C?9 that are suitable for use as solid electrolyte separators in lithium electrochemical devices. Also set forth herein are methods of making A·(LiBH4)·B·(LiX)·C·(LiNH2) compositions.
    Type: Application
    Filed: January 10, 2023
    Publication date: September 7, 2023
    Inventors: Zhebo CHEN, Tim HOLME, Marie MAYER, Nick PERKINS, Eric TULSKY, Cheng-Chieh CHAO, Christopher DEKMEZIAN, Shuang LI
  • Patent number: 11739418
    Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.
    Type: Grant
    Filed: March 18, 2020
    Date of Patent: August 29, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Mingwei Zhu, Zihao Yang, Nag B. Patibandla, Ludovic Godet, Yong Cao, Daniel Lee Diehl, Zhebo Chen
  • Publication number: 20230263075
    Abstract: Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.
    Type: Application
    Filed: August 30, 2022
    Publication date: August 17, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Zihao Yang, Mingwei Zhu, Lan Yu, Zhebo Chen, Robert Jan Visser, Nag Patibandla
  • Patent number: 11678589
    Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: June 13, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • Publication number: 20230123228
    Abstract: The present disclosure sets forth battery components for secondary and/or traction batteries. Described herein are new solid-state lithium (Li) conducting electrolytes including monolithic, single layer, and bi-layer solid-state sulfide-based lithium ion (Li+) conducting catholytes or electrolytes. These solid-state ion conductors have particular chemical compositions which are arranged and/or bonded through both crystalline and amorphous bonds. Also provided herein are methods of making these solid-state sulfide-based lithium ion conductors including new annealing methods. These ion conductors are useful, for example, as membrane separators in rechargeable batteries.
    Type: Application
    Filed: July 19, 2022
    Publication date: April 20, 2023
    Inventors: Tim HOLME, Kim VAN BERKEL, William HUDSON, Kian KERMAN, Sunil MAIR, Amal MEHROTRA, Zhebo CHEN
  • Patent number: 11600761
    Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: March 7, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • Patent number: 11581612
    Abstract: Set forth herein are compositions comprising A.(LiBH4).B.(LiX).C.(LiNH2), wherein X is fluorine, bromine, chloride, iodine, or a combination thereof, and wherein 0.1?A?3, 0.1?B?4, and 0?C?9 that are suitable for use as solid electrolyte separators in lithium electrochemical devices. Also set forth herein are methods of making A.(LiBH4).B.(LiX).C.(LiNH2) compositions. Also disclosed herein are electrochemical devices which incorporate A.(LiBH4).B.(LiX).C.(LiNH2) compositions and other materials.
    Type: Grant
    Filed: April 13, 2021
    Date of Patent: February 14, 2023
    Assignee: QuantumScape Battery, Inc.
    Inventors: Zhebo Chen, Tim Holme, Marie Mayer, Nick Perkins, Eric Tulsky, Cheng-Chieh Chao, Christopher Dekmezian, Shuang Li
  • Publication number: 20230031378
    Abstract: Set forth herein are electrochemical cells which include a negative electrode current collector, a lithium metal negative electrode, an oxide electrolyte membrane, a bonding agent layer, a positive electrode, and a positive electrode current collector. The bonding agent layer advantageously lowers the interfacial impedance of the oxide electrolyte at least at the positive electrode interface and also optionally acts as an adhesive between the solid electrolyte separator and the positive electrode interface. Also set forth herein are methods of making these bonding agent layers including, but not limited to, methods of preparing and depositing precursor solutions which form these bonding agent layers. Set forth herein, additionally, are methods of using these electrochemical cells.
    Type: Application
    Filed: August 16, 2022
    Publication date: February 2, 2023
    Inventors: Zhebo CHEN, Niall Donnelly, Tim Holme, Deepika Singh
  • Publication number: 20220403505
    Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.
    Type: Application
    Filed: June 16, 2021
    Publication date: December 22, 2022
    Inventors: Annamalai LAKSHMANAN, Jacqueline S. WRENCH, Feihu WANG, Yixiong YANG, Joung Joo LEE, Srinivas GANDIKOTA, Sang-heum KIM, Zhebo CHEN, Gang SHEN
  • Publication number: 20220384705
    Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.
    Type: Application
    Filed: August 8, 2022
    Publication date: December 1, 2022
    Inventors: Mingwei Zhu, Zihao Yang, Nag B. Patibandla, Ludovic Godet, Yong Cao, Daniel Lee Diehl, Zhebo Chen