Abstract: Various embodiments disclosed herein describe photonic passive delay lines that have a waveguide wound into a plurality of straight segments and bends. The photonic passive delay lines are configured to reduce losses from parasitic modes of light generated at the bends. Embodiments of the photonic passive delay lines vary the dimensions of the straight segments to provide different amounts of dephasing between a mode of input light received by the photonic passive delay line and one or more parasitic modes.

Abstract: The display system for 3D light field generation comprises a photonic circuit comprising a plurality of light emitting units, wherein each light emitting unit comprises a light intensity modulator, and the display system comprises a phased liquid crystal array adapted to control the exiting optical angle of light for emission angle steering. The operations of light intensity modulators and the phased liquid crystal array are synchronized when reconstructing a light field of a virtual 3D object viewed by a user's eye.

Abstract: The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.

Abstract: The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.