Patents by Inventor Zhen-Cheng Wu

Zhen-Cheng Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9178086
    Abstract: A method for fabricating back-contact type solar cells is provided. The method comprises forming a plurality of n-type doped zones, a plurality of p-type doped zones, and a back anti-reflection layer on a back surface of a semiconductor substrate. The lead-containing conductive paste may pass through the back anti-reflection layer and connect to the n-type doped zones and the p-type doped zones thereby being regarded as n-type electrodes and p-type electrodes.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: November 3, 2015
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Yen-Cheng Hu, Jen-Chieh Chen, Zhen-Cheng Wu
  • Patent number: 9136226
    Abstract: An ultra-violet (UV) protection layer is formed over a semiconductor workpiece before depositing a UV curable dielectric layer. The UV protection layer prevents UV light from reaching and damaging underlying material layers and electrical devices. The UV protection layer comprises a layer of silicon doped with an impurity, wherein the impurity comprises O, C, H, N, or combinations thereof. The UV protection layer may comprise SiOC:H, SiON, SiN, SiCO:H, combinations thereof, or multiple layers thereof, as examples.
    Type: Grant
    Filed: May 5, 2010
    Date of Patent: September 15, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Zhen-Cheng Wu, Yung-Cheng Lu, Chung-Chi Ko
  • Publication number: 20150243806
    Abstract: A method for fabricating back-contact type solar cells is provided. The method comprises forming a plurality of n-type doped zones, a plurality of p-type doped zones, and a back anti-reflection layer on a back surface of a semiconductor substrate. The lead-containing conductive paste may pass through the back anti-reflection layer and connect to the n-type doped zones and the p-type doped zones thereby being regarded as n-type electrodes and p-type electrodes.
    Type: Application
    Filed: September 5, 2014
    Publication date: August 27, 2015
    Inventors: Yen-Cheng HU, Jen-Chieh CHEN, Zhen-Cheng WU
  • Publication number: 20150200160
    Abstract: A semiconductor structure comprises a first conductive material-containing layer. The first conductive material-containing layer comprises a dielectric material, at least two conductive structures in the dielectric material, and an air-gap region in the dielectric material between the at least two conductive structures. The semiconductor structure also comprises a capping layer over the at least two conductive structures and the air-gap region. The semiconductor structure further comprises a second conductive material-containing layer over the capping layer. The second conductive material-containing layer comprises a via plug electrically connected to one of the at least two conductive structures. The via plug is separated from the air-gap region by at least a first predetermined distance. The semiconductor structure additionally comprises a conductive pad over the second conductive material-containing layer. The conductive pad is offset from the air-gap region by at least a second predetermined distance.
    Type: Application
    Filed: March 26, 2015
    Publication date: July 16, 2015
    Inventors: Shu-Hui SU, Cheng-Lin HUANG, Jiing-Feng YANG, Zhen-Cheng WU, Ren-Guei WU, Dian-Hau CHEN, Yuh-Jier MII
  • Patent number: 8999839
    Abstract: A method of manufacturing a semiconductor structure, the method includes removing a portion of a dielectric filler from a first metal-containing layer formed over a semiconductor substrate to define an air-gap region according to a predetermined air-gap pattern. The method further includes filling the air-gap region with a decomposable filler and forming a dielectric capping layer over the first metal-containing layer. The method further includes decomposing the decomposable filler.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: April 7, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shu-Hui Su, Cheng-Lin Huang, Jiing-Feng Yang, Zhen-Cheng Wu, Ren-Guei Wu, Dian-Hau Chen, Yuh-Jier Mii
  • Patent number: 8975749
    Abstract: A method of making a semiconductor device includes forming a dielectric layer over a semiconductor substrate. The method further includes forming a copper-containing layer in the dielectric layer, wherein the copper-containing layer has a first portion and a second portion. The method further includes forming a first barrier layer between the first portion of the copper-containing layer and the dielectric layer. The method further includes forming a second barrier layer at a boundary between the second portion of the copper-containing layer and the dielectric layer wherein the second barrier layer is adjacent to an exposed portion of the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer, and a boundary between a sidewall of the copper-containing layer and the first barrier layer is free of the second barrier layer.
    Type: Grant
    Filed: January 10, 2014
    Date of Patent: March 10, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Nai-Wei Liu, Zhen-Cheng Wu, Cheng-Lin Huang, Po-Hsiang Huang, Yung-Chih Wang, Shu-Hui Su, Dian-Hau Chen, Yuh-Jier Mii
  • Patent number: 8952244
    Abstract: A solar cell includes a semiconductor substrate, a doping layer, a quantum well layer, a first passivation layer, a second passivation layer, a first electrode and a second electrode. The semiconductor substrate has a front surface and a back surface, and the front surface of the semiconductor substrate includes nano-rods. The doping layer covers the surface of the nano-rods. The electrode layers cover the doping layer. The quantum well layer having at least one first doping region and at least one second doping region is disposed on the semiconductor substrate. The quantum well layer includes polycrystalline silicon germanium (Si1-xGex). The first passivation layer and the second passivation layer cover the first and the second doping regions of the quantum well layer, respectively. The first electrode and the second electrode are electrically connected to the first doping region and the second doping region of the quantum well layer, respectively.
    Type: Grant
    Filed: April 19, 2011
    Date of Patent: February 10, 2015
    Assignee: Au Optronics Corporation
    Inventors: Yen-Cheng Hu, Peng Chen, Shuo-Wei Liang, Zhen-Cheng Wu
  • Publication number: 20140295612
    Abstract: A solar cell and a manufacturing method thereof are provided. A laser doping process is adopted to form positive and negative doping regions for an accurate control of the doping regions. No metal contact coverage issue arises since a contact opening is formed by later firing process. The solar cell is provided with a comb-like first electrode, a sheet-like second electrode corresponding to the doping regions to obtain high photoelectric conversion efficiency by fully utilizing the space in the semiconductor substrate. Furthermore, the sheet-like second electrode can be formed by a material having high reflectivity to improve the light utilization rate of the solar cell. The manufacturing process of the solar cell is simplified and the processing yield is improved.
    Type: Application
    Filed: June 13, 2014
    Publication date: October 2, 2014
    Inventors: Cheng-Chang Kuo, Yen-Cheng Hu, Hsin-Feng Lee, Tsung-Pao Chen, Jen-Chieh Chen, Zhen-Cheng Wu
  • Patent number: 8835753
    Abstract: A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.
    Type: Grant
    Filed: May 5, 2011
    Date of Patent: September 16, 2014
    Assignee: AU Optronics Corp.
    Inventors: Yen-Cheng Hu, Hsin-Feng Li, Zhen-Cheng Wu
  • Patent number: 8779281
    Abstract: A solar cell includes a semi-conductive substrate, a doping layer, an anti-reflection layer, an electrode, a passivation stacked layer and a contact layer. The semi-conductive substrate has a front and a back surface. The doping layer is disposed on the front surface. The anti-reflection layer is disposed on the doping layer. The electrode is disposed on the anti-reflection layer and electrically connected to the doping layer. The passivation stacked layer is disposed on the back surface and has a first dielectric layer, a second dielectric layer and a middle dielectric layer sandwiched between the first and the second dielectric layer. The dielectric constant of the middle dielectric layer is substantially lower than the dielectric constant of the first dielectric layer and the dielectric constant of the second dielectric layer. The contact layer covers the passivation stacked layer and electrically contacts with the back surface of the semi-conductive substrate.
    Type: Grant
    Filed: May 4, 2011
    Date of Patent: July 15, 2014
    Assignee: Au Optronics Corporation
    Inventors: Yen-Cheng Hu, Peng Chen, Tsung-Pao Chen, Shuo-Wei Liang, Zhen-Cheng Wu, Chien-Jen Chen
  • Publication number: 20140127898
    Abstract: A method of making a semiconductor device includes forming a dielectric layer over a semiconductor substrate. The method further includes forming a copper-containing layer in the dielectric layer, wherein the copper-containing layer has a first portion and a second portion. The method further includes forming a first barrier layer between the first portion of the copper-containing layer and the dielectric layer. The method further includes forming a second barrier layer at a boundary between the second portion of the copper-containing layer and the dielectric layer wherein the second barrier layer is adjacent to an exposed portion of the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer, and a boundary between a sidewall of the copper-containing layer and the first barrier layer is free of the second barrier layer.
    Type: Application
    Filed: January 10, 2014
    Publication date: May 8, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Nai-Wei LIU, Zhen-Cheng WU, Cheng-Lin HUANG, Po-Hsiang HUANG, Yung-Chih WANG, Shu-Hui SU, Dian-HAU CHEN, Yuh-Jier MII
  • Publication number: 20140060629
    Abstract: A solar cell includes a substrate, a first lightly-doped region, a second lightly-doped region, a second heavily-doped region, a first electrode and a second electrode. The first lightly-doped region having a first doping type is disposed in a first surface of the substrate. The second lightly-doped region and the second heavily-doped region having a second doping type different from the first doping type are disposed in a second surface of the substrate. The first electrode is disposed on the first surface of the substrate, and the second electrode is disposed on the second surface of the substrate.
    Type: Application
    Filed: August 8, 2013
    Publication date: March 6, 2014
    Applicant: AU Optronics Corp.
    Inventors: Liang-Hsing Lai, Chih-Cheng Lu, Jen-Chieh Chen, Zhen-Cheng Wu
  • Publication number: 20140048129
    Abstract: A solar cell includes a substrate. The substrate has a light-receiving surface and a back surface opposite to the light-receiving surface. The substrate includes plural trenches formed on the back surface. The solar cell includes plural n-type diffusion areas and plural p-type diffusion areas alternately disposed on the back surface and the surface of the trenches. The possibility of recombination of the electron-hole pair while moving can be reduced because of the trenches, which are formed in the substrate.
    Type: Application
    Filed: March 11, 2013
    Publication date: February 20, 2014
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Tsung-Pao CHEN, Shih-Hsien YANG, Yu-Chun CHEN, Ming-Hui CHIU, Yi-Hsuan LIN, Yen-Cheng HU, Jen-Chieh CHEN, Zhen-Cheng WU
  • Patent number: 8653664
    Abstract: A copper interconnect includes a copper layer formed in a dielectric layer, having a first portion and a second portion. A first barrier layer is formed between the first portion of the copper layer and the dielectric layer. A second barrier layer is formed at the boundary between the second portion of the copper layer and the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer.
    Type: Grant
    Filed: July 8, 2010
    Date of Patent: February 18, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Nai-Wei Liu, Zhen-Cheng Wu, Cheng-Lin Huang, Po-Hsiang Huang, Yung-Chih Wang, Shu-Hui Su, Dian-Hau Chen, Yuh-Jier Mii
  • Publication number: 20130312820
    Abstract: A solar cell includes a semiconductor substrate and a first antireflective layer. The semiconductor substrate has a first-type semiconductor surface and a second-type semiconductor surface opposite to each other. The first antireflective layer includes a plurality of refraction convexes and a coverage layer. The refraction convexes are formed on the second-type semiconductor surface. Each refraction convex includes a first refraction part and a second refraction part. The first refraction parts are conformally coated with the respective second refraction parts, and the first refraction part is configured to have a refractive index greater than the refractive index of the second refraction part. The coverage layer is formed to cover the second-type semiconductor surface and the refraction convexes, and the coverage layer is configured to have a refractive index smaller than the refractive index of the second refraction part. A solar cell manufacturing method is also provided.
    Type: Application
    Filed: September 4, 2012
    Publication date: November 28, 2013
    Applicant: AU OPTRONICS CORP.
    Inventors: Yen-Cheng HU, Wei-Shuo Ho, Jen-Chieh Chen, Zhen-Cheng Wu
  • Publication number: 20130252144
    Abstract: A method of manufacturing a semiconductor structure, the method includes removing a portion of a dielectric filler from a first metal-containing layer formed over a semiconductor substrate to define an air-gap region according to a predetermined air-gap pattern. The method further includes filling the air-gap region with a decomposable filler and forming a dielectric capping layer over the first metal-containing layer. The method further includes decomposing the decomposable filler.
    Type: Application
    Filed: May 15, 2013
    Publication date: September 26, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMAPNY, LTD.
    Inventors: Shu-Hui SU, Cheng-Lin HUANG, Jiing-Feng YANG, Zhen-Cheng WU, Ren-Guei WU, Dian-Hau CHEN, Yuh-Jier MII
  • Publication number: 20130192658
    Abstract: A solar panel module includes a solar panel, a supporting stand and a deflecting device. The supporting stand is structurally connected to the solar panel for supporting the solar panel. The solar panel is disposed inclinedly, and the solar panel has a tilt angle with respect to a horizontal plane. The deflecting device is disposed underneath the solar panel for deflecting wind blowing from lateral directions toward a wind exiting direction, which faces a bottom surface of the solar panel.
    Type: Application
    Filed: April 13, 2012
    Publication date: August 1, 2013
    Inventors: Huang-Chi Tseng, Chiuan-Ting Li, Wei-Jieh Lee, Chun-Ming Yang, Kuan-Wen Tung, Ming-Yuan Huang, Zhen-Cheng Wu
  • Publication number: 20130167919
    Abstract: Disclosed herein is a solar cell, which includes a first electrode, a buried electrode, a photoelectric conversion layer and a second electrode. The buried electrode is disposed on the first electrode. The photoelectric conversion layer is disposed over the first electrode and the buried electrode. The buried electrode is embedded in the photoelectric conversion layer. The second electrode is arranged in a way such that the photoelectric conversion layer is positioned between the first electrode and the second electrode.
    Type: Application
    Filed: April 27, 2012
    Publication date: July 4, 2013
    Applicant: AU Optronics Corporation
    Inventors: Liang-Hsing LAI, Yen-Cheng HU, Jen-Chieh CHEN, Zhen-Cheng WU
  • Patent number: 8456009
    Abstract: A semiconductor structure includes a first metal-containing layer, a dielectric capping layer, a second metal-containing layer, and a conductive pad. The first metal-containing layer includes a set of metal structures, a dielectric filler disposed to occupy a portion of the first metal-containing layer, and an air-gap region defined by at least the set of metal structures and the dielectric filler and abutting at least a portion of the set of metal structures. The second metal-containing layer includes at least a via plug electrically connected to a portion of the set of metal structures. The conductive pad and the via plug do not overlap the air-gap region.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: June 4, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shu-Hui Su, Cheng-Lin Huang, Jiing-Feng Yang, Zhen-Cheng Wu, Ren-Guei Wu, Dian-Hau Chen, Yuh-Jier Mii
  • Patent number: 8338217
    Abstract: A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.
    Type: Grant
    Filed: March 16, 2011
    Date of Patent: December 25, 2012
    Assignee: Au Optronics Corporation
    Inventors: Yen-Cheng Hu, Cheng-Chang Kuo, Jun-Wei Chen, Hsin-Feng Li, Jen-Chieh Chen, Zhen-Cheng Wu