Abstract: A LED packaging module includes a plurality of LED chips, a wiring layer, and an encapsulant component. The LED chips are spaced apart, each of which includes chip first, chip second, and chip side surfaces, and an electrode unit. The wiring layer is disposed on the chip second surfaces, has first, second, and side wiring layer surfaces, and is divided into a plurality of wiring parts spaced apart. The first wiring layer surface contacts and is electrically connected to the electrode units. The encapsulant component includes first and second encapsulating layers, covers the chip side surfaces, the chip first surfaces, and the side wiring layer surface, and fills gaps among the wiring parts. Each LED chip has a thickness represented by TA, the first encapsulating layer has a thickness represented by TB, and TA and TB satisfy a relationship: TB/TA?1.

Abstract: A display apparatus includes a thin-film transistor (TFT) substrate and a light-emitting module arranged on the TFT substrate. The light-emitting module includes multiple light-emitting elements, the light-emitting elements include a first light-emitting element emitting a first wavelength, a second light-emitting element emitting a second wavelength, and a third light-emitting element emitting a third wavelength. A voltage of each light-emitting element is greater than or equal to 3 volts (V) when a rated current is 1 microampere (?A).

Abstract: A light-emitting diode (LED) packaging module includes LED chips, a wiring layer, and an encapsulant component. Each of the LED chips includes a chip first surface, a chip second surface, a chip side surface, and an electrode unit. The wiring layer is disposed on the chip second surfaces of the LED chips, and contacts and is electrically connected to the electrode units. The encapsulant component includes a first encapsulating layer that covers the chip side surface, and a second encapsulating layer that covers the wiring layer. The LED chip has a thickness TA, the first encapsulating layer has a thickness TB, in which TB/TA?1.

Abstract: A light-emitting module and a display device are provided, the light-emitting module includes light-emitting elements, a filling layer, a wiring layer and conductive solder pads, the light-emitting elements are arranged at intervals, and a thickness of each light-emitting element is smaller than or equal to 15 ?m; the filling layer is filled between adjacent light-emitting elements; the wiring layer is disposed on the light-emitting elements, and is configured to electrically connect to the light-emitting elements; the conductive solder pads are disposed on a side of the wiring layer facing away from the light-emitting elements, and are electrically connected to the wiring layer; specifically, the filling layer contains a black filling component, a particle size of the black filling component is smaller than or equal to 1/10 of the thickness of the light-emitting element, or the particle size of the black filling component is smaller than or equal to 1 ?m.

Abstract: A light-emitting diode (LED) filament structure includes a substrate, an LED chip unit, a first chromic layer, and a light conversion layer. The LED chip unit is disposed on the substrate, and includes first and second LED chips emitting different excitation lights. The first chromic layer covers the first and second LED chips. The light conversion layer covers the LED chip unit and the first chromic layer. The first chromic layer is configured to transition between an inactivated state and an activated state to prevent or allow the excitation light from the first or second LED chips to pass therethrough, so as to excite the light conversion layer to emit different excited lights having different color temperatures.

Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.

Abstract: A light-emitting diode (LED) packaging module includes a plurality of LED chips spaced apart from one another, an encapsulating layer that fills in a space among the LED chips, a light-transmitting layer disposed on the encapsulating layer, a wiring assembly disposed on and electrically connected to the LED chips, and an insulation component that covers the encapsulating layer and the wiring assembly. Each of the LED chips includes an electrode assembly including first and second electrodes. The light-transmitting layer includes a light-transmitting layer that has a light transmittance greater than that of the encapsulating layer.

Abstract: A light-emitting diode (LED) packaging module includes light-emitting units arranged in an array having m row(s) and n column(s), an encapsulating layer, and a wiring assembly, where m and n each independently represents a positive integer. Each of the light-emitting units includes LED chips each including a chip first surface, a chip second surface, a chip side surface, and an electrode assembly disposed on the chip second surface. The encapsulating layer covers the chip side surface and fills a space among the LED chips. The wiring assembly is disposed on the chip second surface and is electrically connected to the electrode assembly.

Abstract: A light-emitting device includes a number (N) of light-emitting units, a number (a) of first metal pads and a number (b) of second metal pads. Each of the light-emitting units includes a number (n) of light-emitting chips each having two distinct terminals, where N and n are integers and N>1, n>?3. The numbers (a) and (b) are integers and a>1, b>1, and the terminals of each of the light-emitting chips are electrically connected to a unique combination of one of the number (a) of first metal pads and a number (b) of second metal pads, respectively. The numbers (N), (n), (a) and (b) satisfy the equation: a*b=n*N.

Abstract: A light-emitting diode (LED) packaging module includes LED chips, a wiring layer, and an encapsulant component. Each of the LED chips includes a chip first surface, a chip second surface, a chip side surface, and an electrode unit. The wiring layer is disposed on the chip second surfaces of the LED chips, and contacts and is electrically connected to the electrode units. The encapsulant component includes a first encapsulating layer that covers the chip side surface, and a second encapsulating layer that covers the wiring layer. The LED chip has a thickness TA, the first encapsulating layer has a thickness TB, in which TB/TA?1.

Abstract: A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)?B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.

Abstract: A light-emitting diode (LED) filament structure includes a substrate, an LED chip unit, a first chromic layer, and a light conversion layer. The LED chip unit is disposed on the substrate, and includes first and second LED chips emitting different excitation lights. The first chromic layer covers the first and second LED chips. The light conversion layer covers the LED chip unit and the first chromic layer. The first chromic layer is configured to transition between an inactivated state and an activated state to prevent or allow the excitation light from the first or second LED chips to pass therethrough, so as to excite the light conversion layer to emit different excited lights having different color temperatures.

Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.

Abstract: A light-emitting diode (LED) package includes a substrate with upper and lower surfaces, including: a metal block; an electrically insulating region surrounding at least a portion of the metal block; an LED chip mounted on the substrate and in electrical communication with the metal block; and an encapsulant covering at least an upper surface of the LED chip. A light-emitting system includes a plurality of light-emitting diode (LED) chips; and a package support for the plurality of LED chips.

Abstract: A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)?B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.

Abstract: A light-emitting diode (LED) package includes a substrate with upper and lower surfaces, including: a metal block; an electrically insulating region surrounding at least a portion of the metal block; an LED chip mounted on the substrate and in electrical communication with the metal block; and an encapsulant covering at least an upper surface of the LED chip. A light-emitting system includes a plurality of light-emitting diode (LED) chips; and a package support for the plurality of LED chips.

Abstract: A light-emitting diode (LED) package, including: a substrate with front and back surfaces, including: at least two metal blocks; an insulation portion, wherein the metal blocks are disposed in the insulation portion and have at least portions of upper and lower surfaces exposed; and an electrical insulation region between the at least two metal blocks; an LED chip disposed over, and forming one or more electrical connections with, the at least two metal blocks; and a package encapsulant disposed over the LED chip surface and covering at least a portion of the substrate; wherein the at least two metal blocks have protrusion connection portions that extend to an edge of the substrate.

Abstract: A light-emitting diode (LED) package, including: a substrate with front and back surfaces, including: at least two metal blocks; an insulation portion, wherein the metal blocks are disposed in the insulation portion and have at least portions of upper and lower surfaces exposed; and an electrical insulation region between the at least two metal blocks; an LED chip disposed over, and forming one or more electrical connections with, the at least two metal blocks; and a package encapsulant disposed over the LED chip surface and covering at least a portion of the substrate; wherein the at least two metal blocks have protrusion connection portions that extend to an edge of the substrate.

Abstract: A package support including: metal frames connected together; one or more dielectric materials disposed in an inner gap of the metal frames; wherein: the package support has a frame region and a function region; wherein the function region has complete upper and lower surfaces configured to prevent leakage if at least one of the entire upper or lower surfaces is covered with an encapsulant material. A fabrication method allows for manufacturing the package support with a high cell density, relatively low price, high reflectivity, good heat dissipation, and high reliability. The LED package using the package support has a smaller size and improved dissipation properties.

Abstract: A package support including: metal frames connected together; one or more dielectric materials disposed in an inner gap of the metal frames; wherein: the package support has a frame region and a function region; wherein the function region has complete upper and lower surfaces configured to prevent leakage if at least one of the entire upper or lower surfaces is covered with an encapsulant material. A fabrication method allows for manufacturing the package support with a high cell density, relatively low price, high reflectivity, good heat dissipation, and high reliability. The LED package using the package support has a smaller size and improved dissipation properties.