Abstract: The present invention provides process for treating crop kernels, comprising the steps of a) soaking kernels in water to produce soaked kernels; b) grinding the soaked kernels; c) treating the soaked kernels in the presence of an effective amount of an enzyme composition comprising: i) a protease, and ii) a cellulolytic composition, wherein step c) is performed before, during or after step b).

Abstract: The present invention provides process for treating crop kernels, comprising the steps of a) soaking kernels in water to produce soaked kernels; b) grinding the soaked kernels; c) treating the soaked kernels in the presence of an effective amount of an acetylxylan esterase, wherein step c) is performed before, during or after step b).

Abstract: Process for treating crop kernels, comprising the steps of: a) soaking kernels in water to produce soaked kernels; b) grinding the soaked kernels; c) treating the soaked kernels in the presence of an effective amount of a beta-xylosidase, wherein step c) is performed before, during or after step b).

Abstract: The present invention provides a method for locating a data frame. The method mainly includes: allocating a framing state machine to each byte of a data stream within a current clock cycle; respectively starting, by the framing state machines, hunting for data frames from respective corresponding bytes, and obtaining a plurality of data frame hunt results; and selecting one hunt result from the plurality of data frame hunt results according to a data frame hunt result within a previous clock cycle as a data frame hunt result within the current clock cycle.

Abstract: The present invention provides a method for locating a data frame. The method mainly includes: allocating a framing state machine to each byte of a data stream within a current clock cycle; respectively starting, by the framing state machines, hunting for data frames from respective corresponding bytes, and obtaining a plurality of data frame hunt results; and selecting one hunt result from the plurality of data frame hunt results according to a data frame hunt result within a previous clock cycle as a data frame hunt result within the current clock cycle.

Abstract: A phosphor can be excited by UV, purple or blue light LED, its preparation method, and light emitting devices incorporating the same. The phosphor contains rare earth, silicon, alkaline-earth metal, halogen, and oxygen, as well as aluminum or gallium. Its General formula of is aLn2O3.MO.bM?2O3.fSiO2.cAXe:dR, wherein Ln is at least one metal element selected from a group consisting of Sc, Y, La, Pr, Nd, Gd, Ho, Yb and Sm; M is at least one metal element selected from a group consisting of Ca, Sr and Ba; M? is at least one metal element selected from Al and Ga; A is at least one metal element selected from a group consisting of Li, Na, K, Mg, Ca, Sr and Ba; X is at least one element selected from F and Cl; R is at least one metal element selected from a group consisting of Ce, Eu, Tb and Mn; 0.01?a?2, 0.35?b?4, 0.01?c?1, 0.01?d?0.3, 0.01?f?3, 0.6?e?2.4. The phosphor has broad emitting range, high efficiency, better uniformity and stability.

Abstract: A phosphor can be excited by UV, purple or blue light LED, its production and the light emitting devices. The general formula of the phosphor is LnaMb(O,F)12:(R3+,M?2+)x, wherein, Ln is at least one metal element selected from a group consisting of Sc, Y, La, Pr, Nd, Gd, Ho, Yb and Sm, 2.6?a?3.4; M is at least one element selected from a group consisting of B, Al and Ga, 4.5?b?5.5; R is at least one metal element selected from a group consisting of Ce and Tb; M? is at least one metal element selected from a group consisting of Ca, Sr, Ba, Mn and Zn, 0.001?x?0.4. The phosphor possesses broad emitting range, high efficiency, better uniformity and stability. A light emitting device can be obtained by incorporating this phosphor into a UV, purple or blue light emitting device.

Abstract: A phosphor can be excited by UV, purple or blue light LED, its production and the light emitting devices. The general formula of the phosphor is LnaMb(O,F)12:(R3+, M?2+)x, wherein, Ln is at least one metal element selected from a group consisting of Sc, Y, La, Pr, Nd, Gd, Ho, Yb and Sm, 2.6?a?3.4; M is at least one element selected from a group consisting of B, Al and Ga, 4.5?b?5.5; R is at least one metal element selected from a group consisting of Ce and Tb; M? is at least one metal element selected from a group consisting of Ca, Sr, Ba, Mn and Zn, 0.001?x?0.4. The phosphor possesses broad emitting range, high efficiency, better uniformity and stability. A light emitting device can be obtained by incorporating this phosphor into a UV, purple or blue light emitting device.

Abstract: A phosphor can be excited by UV, purple or blue light LED, its preparation method, and light emitting devices incorporating the same. The phosphor contains rare earth, silicon, alkaline-earth metal, halogen, and oxygen, as well as aluminum or gallium. Its General formula of is aLn2O3.MO.bM?2O3.fSiO2.cAXe: dR, wherein Ln is at least one metal element selected from a group consisting of Sc, Y, La, Pr, Nd, Gd, Ho, Yb and Sm; M is at least one metal element selected from a group consisting of Ca, Sr and Ba; M? is at least one metal element selected from Al and Ga; A is at least one metal element selected from a group consisting of Li, Na, K, Mg, Ca, Sr and Ba; X is at least one element selected from F and Cl; R is at least one metal element selected from a group consisting of Ce, Eu, Tb and Mn; 0.01?a?2, 0.35?b?4, 0.01?c?1, 0.01?d?0.3, 0.01?f?3, 0.6?e?2.4. The phosphor has broad emitting range, high efficiency, better uniformity and stability.

Abstract: An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths.

Abstract: An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths.

Abstract: A method of fabricating a stacked gate dielectric layer. First, a semiconductor substrate having a native oxide thereon is provided. Next, a first gas containing hydrogen is introduced on the semiconductor substrate. A nitride is deposited on the native oxide. A second gas containing nitrous oxide is introduced on the semiconductor substrate. A third gas containing nitrogen oxide is introduced on the semiconductor substrate. Finally, an annealing treatment is performed.

Abstract: A method of etching a metal line. A substrate with a metal layer to be etched is provided, on which an amorphous carbon doped layer is formed over the metal layer by plasma enhanced chemical vapor deposition (PECVD). A resist layer is formed over the amorphous carbon doped layer, and the resist layer is patterned to define a resist mask. The amorphous carbon doped layer is etched to define a hardmask, the resist mask is stripped, and the metal layer not covered by the hardmask is etched to form a metal line for forming an interconnect.

Abstract: A method of fabricating a well-filled STI Structure in a semiconductor substrate. A trench is formed in the semiconductor substrate. A liner oxide and a liner nitride are formed on the bottom and sidewall of the trench subsequently. A HDP oxide layer is deposited in the trench conformally to fill a portion of the trench. A layer of poly-silicon is deposited over the HDP oxide layer conformally. The semiconductor substrate is subjected to a thermal treatment to oxidize the poly-silicon. The surface of the semiconductor substrate is planarized to form a shallow trench isolation structure. The trench is well filled by the oxidized poly-silicon and the HDP oxide without voids and seams.

Abstract: A method of etching a low-k dielectric layer. A substrate having a low-k dielectric layer to be etched, on which an amorphous carbon doped layer is formed over the low-k dielectric layer by plasma enhanced chemical vapor deposition (PECVD), a resist layer is formed over the amorphous carbon doped layer , and the resist layer is patterned to define a first opening thereby forming a resist mask. The amorphous carbon doped layer is etched to define a second opening, thereby forming a hardmask, the resist mask is stripped, and the low-k dielectric layer not covered by the hardmask is etched to form a third opening as a trench or via.