Patents by Inventor Zhen-Ming HUANG

Zhen-Ming HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240081077
    Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.
    Type: Application
    Filed: September 1, 2022
    Publication date: March 7, 2024
    Applicants: Taiwan Semiconductor Manufacturing Company, Ltd., National Yang Ming Chiao Tung University
    Inventors: Po-Tsun Liu, Meng-Han Lin, Zhen-Hao Li, Tsung-Che Chiang, Bo-Feng Young, Hsin-Yi Huang, Sai-Hooi Yeong, Yu-Ming Lin
  • Publication number: 20240071850
    Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a substrate, semiconductor structures, an isolation layer, an adhesive layer, a metal layer, a metal nitride layer, a semiconductor layer, a profile modifier layer, and a disconnection structure. The semiconductor structures are disposed on the substrate. The isolation layer is disposed between the semiconductor structures. The metal layer is disposed on an adhesive layer. The metal nitride layer is disposed on the metal layer. The semiconductor layer is disposed on the metal nitride layer. The profile modifier layer is disposed on the semiconductor layer. The disconnection structure is disposed and extending from the profile modifier layer to the isolation layer. A first width of the disconnection structure in the profile modifier layer is substantially the same as a second width of the disconnection structure in the isolation layer.
    Type: Application
    Filed: August 29, 2022
    Publication date: February 29, 2024
    Inventors: FU-MING HSU, MING-JIE HUANG, ZHEN-CHENG WU, YUNG-CHENG LU
  • Publication number: 20230336236
    Abstract: A spatial modulation system and a method for generating training sequences are provided. The method for generating training sequences includes: obtaining a cross Z-complementary set (CZCS); and obtaining a training sequence matrix according to cross Z-complementary sequences in the CZCS. Therefore, a larger zero correlation zone (ZCZ) width can be constructed, and the constructed sequence set has flexible lengths.
    Type: Application
    Filed: May 31, 2022
    Publication date: October 19, 2023
    Applicant: National Cheng Kung University
    Inventors: Chao-Yu CHEN, Zhen-Ming HUANG