Abstract: In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.

Abstract: In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.

Abstract: A semiconductor structure including a self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion is provided. The semiconductor structure includes a substrate and a first dielectric layer on the substrate. A contact structure is embedded in the first dielectric layer and includes a conductive line. The semiconductor structure further includes a self-assembled monolayer on the conductive line, and a second dielectric layer on the first dielectric layer and the conductive line. The self-assembled monolayer is chemically bonded to the conductive line and the second dielectric layer.

Abstract: A semiconductor structure including a self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion is provided. The semiconductor structure includes a substrate and a first dielectric layer on the substrate. A contact structure is embedded in the first dielectric layer and includes a conductive line. The semiconductor structure further includes a self-assembled monolayer on the conductive line, and a second dielectric layer on the first dielectric layer and the conductive line. The self-assembled monolayer is chemically bonded to the conductive line and the second dielectric layer.

Abstract: The present disclosure relates integrated chip structure. The integrated chip structure includes a lower insulating structure disposed over a lower dielectric structure surrounding one or more lower interconnects. A bottom electrode via surrounded by one or more interior sidewalls of the lower insulating structure. The bottom electrode via includes a barrier surrounding a conductive core. A bottom electrode is arranged on the bottom electrode via, a data storage structure is over the bottom electrode, and a top electrode is over the data storage structure. The barrier includes a sidewall disposed along the one or more interior sidewalls of the lower insulating structure and a horizontally covering segment protruding outward from the sidewall to above a top surface of the lower insulating structure.

Abstract: In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.

Abstract: A semiconductor structure including a self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion is provided. The semiconductor structure includes a substrate and a first dielectric layer on the substrate. A contact structure is embedded in the first dielectric layer and includes a conductive line. The semiconductor structure further includes a self-assembled monolayer on the conductive line, and a second dielectric layer on the first dielectric layer and the conductive line. The self-assembled monolayer is chemically bonded to the conductive line and the second dielectric layer.

Abstract: The present invention provides a method of forming paracyclyophane containing disulfide functional group. The paracyclophane is prepared by adding 3,3?-dithiodipropionic acid (DPDPA) and N-ethyl-N?-(3-(dimethylamino)propyl)carbodiimide (EDC) into 4-aminomethyl [2,2] paracyclophane. The present invention further provides a chemical film and a method of forming the same. The chemical film contains poly-p-xylylene with disulfide functional group and is formed on a substrate by a chemical vapor deposition process.

Abstract: The present invention provides a method of forming paracyclyophane containing disulfide functional group. The paracyclophane is prepared by adding 3,3?-dithiodipropionic acid (DPDPA) and N-ethyl-N?-(3-(dimethylamino)propyl)carbodiimide (EDC) into 4-aminomethyl [2,2] paracyclophane. The present invention further provides a chemical film and a method of forming the same. The chemical film contains poly-p-xylylene with disulfide functional group and is formed on a substrate by a chemical vapor deposition process.

Abstract: The present invention provides a biological material including a parylene C film; and first proteins which are adsorbed on the surface of the parylene C film. According to an embodiment of the present invention, the biological material further includes second proteins different from the first proteins adsorbed on the surface of the parylene C film. According to an embodiment of the present invention, the first proteins or the second proteins include BMP-2, fibronectin or PRP.

Abstract: The present invention provides a method of forming paracyclyophane containing disulfide functional group. The paracyclophane is prepared by adding 3,3?-dithiodipropionic acid (DPDPA) and N-ethyl-N?-(3-(dimethylamino)propyl)carbodiimide (EDC) into 4-aminomethyl [2,2] paracyclophane. The present invention further provides a chemical film and a method of forming the same. The chemical film contains poly-p-xylylene with disulfide functional group and is formed on a substrate by a chemical vapor deposition process.

Abstract: The present invention provides a method of forming paracyclyophane containing disulfide functional group. The paracyclophane is prepared by adding 3,3?-dithiodipropionic acid (DPDPA) and N-ethyl-N?-(3-(dimethylamino)propyl)carbodiimide (EDC) into 4-aminomethyl [2,2] paracyclophane. The present invention further provides a chemical film and a method of forming the same. The chemical film contains poly-p-xylylene with disulfide functional group and is formed on a substrate by a chemical vapor deposition process.