Abstract: The present application discloses a design for testability circuit of an SRAM. In a write path circuit detection mode of a fault diagnosis logic control module, a write path circuit is in an on state, a write data bit multiplexer is in a selected state, a read data bit multiplexer is in a deselected state, a read path circuit is in an on state, and a memory cell is in a selected state; in a read path circuit detection mode, the write path circuit is in an off state, the write data bit multiplexer is in a selected state, the read data bit multiplexer is in a deselected state, the read path circuit is in an on state, and the memory cell is in a deselected state. A bit line signal end is connected to a test signal outputted by a signal generation circuit.

Abstract: A design-for-test circuit for evaluating a BTI effect is disclosed, the DFT circuit comprises a plurality of stress generators having logic circuits with a plurality of input and output terminals. Each output terminal is connected to the grid of the device to be tested. In a stress mode, a stress input signal is selected from a frequency signal, a first direct current voltage, and a second direct current voltage, all stress output signals formed by all the stress generators comprise the first direct current voltage, a series of frequency signals with different duty cycles, and the second direct current voltage, and all the stress output signals are used in combination such that the stress times regarding the device under test within the same test time have a plurality of different values, so as to evaluate the BTI effect of the device under test having different values of the stress times.

Abstract: The disclosure discloses a wafer acceptance test module for a static memory function test, reduced instruction built-in self-test circuit formed on a wafer includes: a ring oscillator, a frequency divider, a counter, a data latch and comparator. The counter is used for count, and the count is used as an input signal of each of an address decoder and a data input port at the same time. The data latch and comparator is connected to an output terminal of the address decoder and an output terminal of the sense amplifier and compare two output signals to obtain a test result. The disclosure also discloses a wafer acceptance test method for a static memory function test. The disclosure does not need to rely on a dedicated test machine for memory to perform a static memory function test, which can simplify a test procedure.

Abstract: The disclosure discloses a wafer acceptance test module for a static memory function test, reduced instruction built-in self-test circuit formed on a wafer includes: a ring oscillator, a frequency divider, a counter, a data latch and comparator. The counter is used for count, and the count is used as an input signal of each of an address decoder and a data input port at the same time. The data latch and comparator is connected to an output terminal of the address decoder and an output terminal of the sense amplifier and compare two output signals to obtain a test result. The disclosure also discloses a wafer acceptance test method for a static memory function test. The disclosure does not need to rely on a dedicated test machine for memory to perform a static memory function test, which can simplify a test procedure.