Patents by Inventor Zhenchao WEN

Zhenchao WEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10832719
    Abstract: Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the <001> direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: November 10, 2020
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Hiroaki Sukegawa, Zhenchao Wen, Seiji Mitani, Koichiro Inomata, Takao Furubayashi, Jason Paul Hadorn, Tadakatsu Ohkubo, Kazuhiro Hono, Jungwoo Koo
  • Publication number: 20190172486
    Abstract: Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the <001> direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.
    Type: Application
    Filed: December 10, 2018
    Publication date: June 6, 2019
    Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Hiroaki SUKEGAWA, Zhenchao WEN, Seiji MITANI, Koichiro INOMATA, Takao FURUBAYASHI, Jason Paul HADORN, Tadakatsu OHKUBO, Kazuhiro HONO, Jungwoo KOO
  • Patent number: 10199063
    Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the <001> direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.
    Type: Grant
    Filed: March 19, 2015
    Date of Patent: February 5, 2019
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Hiroaki Sukegawa, Zhenchao Wen, Seiji Mitani, Koichiro Inomata, Takao Furubayashi, Jason Paul Hadorn, Tadakatsu Ohkubo, Kazuhiro Hono, Jungwoo Koo
  • Publication number: 20170140784
    Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the <001> direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.
    Type: Application
    Filed: March 19, 2015
    Publication date: May 18, 2017
    Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Hiroaki SUKEGAWA, Zhenchao WEN, Seiji MITANI, Koichiro INOMATA, Takao FURUBAYASHI, Jason Paul HADORN, Tadakatsu OHKUBO, Kazuhiro HONO, Jungwoo KOO