Patents by Inventor Zhenchun Huang

Zhenchun Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting diode with transparent window layer
    Patent number: 6207972
    Abstract: The light brightness of a semiconductor LED is increased by employing a light transmitting window comprising ZnO. In another embodiment, current crowding is reduced, efficiency increased and reliability (lifetime) increased by forming a thin semiconductor transition layer to reduce contact resistance between an overlying transparent window layer and an underlying transparent current diffusion layer formed on a double heterostructure light generation region. Optimum performance is achieved employing the transition layer with a ZnO transparent window layer.
    Type: Grant
    Filed: January 12, 1999
    Date of Patent: March 27, 2001
    Assignee: Super Epitaxial Products, Inc.
    Inventors: Jyh-Chia Chen, Zhenchun Huang, Li-Hsin Kuo
  • Method for reducing contamination in semiconductor by selenium doping
    Patent number: 5653801
    Abstract: Contamination of aluminum-containing compound semiconductors is greatly reduced by an improved method for manufacturing the semiconductors, wherein the growing semiconductor crystal is doped with a predetermined concentration of selenium. The method of the present invention can be used to reduce contaminants in both p-type and n-type semiconductors.
    Type: Grant
    Filed: April 6, 1995
    Date of Patent: August 5, 1997
    Assignee: University of Maryland Baltimore County
    Inventors: Jyh-Chia Chen, Zhenchun Huang