Abstract: A light-emitting device includes a substrate, a semiconductor epitaxial structure, and an etch stop layer. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor epitaxial structure has a side surface that has a roughened structure formed with protrusions, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer disposed on the first surface of the substrate in such order. The etch stop layer is disposed on a surface of the semiconductor epitaxial structure away from the substrate for preventing an etching solution from etching the semiconductor epitaxial structure. A light-emitting package and a light-emitting apparatus are also provided. A method for manufacturing a light-emitting device is also provided.

Abstract: The present invention provides a tempering process for sintered Nd—Fe—B permanent magnet material, which optimizes the microstructure of the Nd—Fe—B magnet and improves intrinsic coercive force and its consistency by increasing the cooling rate after tempering. After heating to a temper temperature, the magnetic material is cooled in a cooling liquid within a cooling chamber into which a pressurized cooling gas is introduced.

Abstract: The present invention provides a tempering process for sintered Nd—Fe—B permanent magnet material, which optimizes the microstructure of the Nd—Fe—B magnet and improves intrinsic coercive force and its consistency by increasing the cooling rate after tempering. After heating to a temper temperature, the magnetic material is cooled in a cooling liquid within a cooling chamber into which a pressurized cooling gas is introduced.