Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.

Abstract: A system, device and method are provided for at least in part automating remediation in an enterprise system. An illustrative method includes receiving a request to perform an action, the action requiring at least one of a plurality of subsystems to be completed. The plurality of subsystems include employee and customer subsystems. The method includes transmitting an event, based on the request, to the at least one of a plurality of subsystems via an event subsystem. The method includes with an automated remediation platform: monitoring events sent from the at least one of a plurality of subsystems to the event subsystem to detect a failure; and in response to detecting the failure, generating a trigger event for consumption by the event subsystem. The method includes in response to receiving the trigger event, transmitting a remediation event for consumption by the at least one of a plurality of subsystems.

Abstract: A high bandwidth memory system. In some embodiments, the system includes: a memory stack having a plurality of memory dies and eight 128-bit channels; and a logic die, the memory dies being stacked on, and connected to, the logic die; wherein the logic die may be configured to operate a first channel of the 128-bit channels in: a first mode, in which a first 64 bits operate in pseudo-channel mode, and a second 64 bits operate as two 32-bit fine-grain channels, or a second mode, in which the first 64 bits operate as two 32-bit fine-grain channels, and the second 64 bits operate as two 32-bit fine-grain channels.

Abstract: A method of correcting a memory error of a dynamic random-access memory module (DRAM) using a double data rate (DDR) interface, the method includes conducting a memory transaction including multiple bursts with a memory controller to send data from data chips of the DRAM to the memory controller, detecting one or more errors using an ECC chip of the DRAM, determining a number of the bursts having the errors using the ECC chip of the DRAM, determining whether the number of the bursts having the errors is greater than a threshold number, determining a type of the errors, and directing the memory controller based on the determined type of the errors, wherein the DRAM includes a single ECC chip per memory channel.

Abstract: A computer-assisted needle insertion method is provided. The computer-assisted needle insertion method includes the following steps. A first machine learning model and a second machine learning model are obtained. A computed tomography image and a needle insertion path are obtained, a suggested needle insertion path is generated according to the first machine learning model, the computed tomography image, and the needle insertion path, and the needle is instructed to approach a needle insertion point on a skin of a target. The needle insertion point is located on the suggested needle insertion path. A breath signal of the target is obtained, and whether a future breath state of the target is normal is estimated according to the second machine learning model and the breath signal. A suggested needle insertion period is output according to the breath signal in response to determining that the future breath state is normal.

Abstract: A system for purifying helium gas, a method, and an application. The system includes a first gas-liquid separation device, a primary helium extraction tower, a second gas-liquid separation device, a secondary helium extraction tower, and a nitrogen removal tower, which are in sequential communication. The first gas-liquid separation device performs first treatment to convert helium-containing natural gas into a first gas and first liquid phases; the primary helium extraction tower performs first distillation on the first gas and first liquid phases to obtain a second gas and second liquid phases; the second gas-liquid separation device performs second treatment to convert the second gas phase to a third gas and third liquid phase; the secondary helium extraction tower performs second distillation on the third gas and third liquid phases to obtain crude helium and a fourth liquid phase form which nitrogen is removed by the nitrogen removal tower.

Abstract: A silicon-carbon composite negative electrode material containing a lithium-rich long-chain composite salt, comprises a silicon-carbon composite material slurry and a lithium-rich long-chain composite salt. Each silicon-carbon composite material particle comprises an element-doped silicon-containing nanoparticle, a first carbon-based covering layer and a second carbon-based covering layer. The element-doped silicon-containing nanoparticle is a core, the first carbon-based covering layer is coated on a surface of the element-doped silicon-containing nanoparticle, the second carbon-based covering layer is coated on the first carbon-based covering layer. The lithium-rich long-chain composite salt comprises a plurality of composite ion bridging structures. A method for preparing the silicon-carbon composite negative electrode material containing a lithium-rich long-chain composite salt is further provided.

Abstract: An example method includes providing, to a sequence model (i) a plurality of few-shot prompts, wherein each prompt comprises a demonstration passage, a demonstration task, and a demonstration query, wherein the demonstration task describes a type of retrieval, and wherein the demonstration query is relevant to the demonstration task, and (ii) a plurality of passages sampled from a corpus of passages. The method also includes receiving, from the sequence model and for the plurality of passages and based on the plurality of few-shot prompts, a respective plurality of predicted task-query pairs, the sequence model having been prompted to predict a task based on an input passage, and predict an output query relevant to the predicted task. The method further includes generating a synthetic training dataset comprising the plurality of passages and the respective plurality of predicted task-query pairs. The method also includes providing the synthetic training dataset.

Abstract: A complex Si—C cathode base units includes a first order Si—C nanoparticle including a plurality of graphene pieces, and a plurality of complex monomers formed by nanometer scale silicide, and first high molecular material. The first high molecular material is used as viscosity for combining the plurality of graphene pieces and the plurality of complex monomers, a plurality of buffer spaces are formed between the plurality of graphene pieces, the complex monomers and the first high molecular material. A second high molecular material layer enclosing the first order SiC nanoparticle, the second high molecular material layer is calcined in a calcination process, so that the carbohydrate therein is carbonized. A plurality of nanometer carbon tubes tightly encloses the second high molecular material layer so that the first order Si—C nanoparticle is difficult to expand. The nanometer carbon tubes have lengths between 15˜25 ?m and are arranged as an array.

Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

Abstract: Provided are an unequal-channel angular self-bending extrusion die and a method for designing and manufacturing the same and extrusion method thereof and includes following steps: designing a symmetrical streamlined extrusion die based on sine function; making the medial axis of the die cavity of the symmetrical streamlined extrusion die twisted and deformed on a certain plane; establishing the die cavity wall surface equation of the unequal-channel angular self-bending extrusion die; setting a working belt structure downstream the die cavity of the unequal-channel angular self-bending extrusion die.

Abstract: The present disclosure discloses a volleyball passing training device, which includes an angle adjustment mechanism and a ball hoop arranged on the angle adjustment mechanism. The angle adjustment mechanism includes a connecting piece connected to the ball hoop, and a first connecting rod and a second connecting rod respectively hinged to the connecting piece. A sliding device which can slide or fix on the second connecting rod is arranged on the second connecting rod. The first connecting rod is hinged to the sliding device. Connecting lines of the hinge points between the first connecting rod and the connecting piece and between the second connecting rod and the connecting piece and the hinge point between the first connecting rod and the sliding device form a triangle.

Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.

Abstract: Provided are an unequal-channel angular self-bending extrusion die and a method for designing and manufacturing the same and extrusion method thereof and includes following steps: designing a symmetrical streamlined extrusion die based on sine function; making the medial axis of the die cavity of the symmetrical streamlined extrusion die twisted and deformed on a certain plane; establishing the die cavity wall surface equation of the unequal-channel angular self-bending extrusion die; setting a working belt structure downstream the die cavity of the unequal-channel angular self-bending extrusion die.

Abstract: A motion recognition apparatus and a control method thereof, capable of controlling and operating a controlled device by determining a gesture variation of a user to replace conventional finger touch for a user interface. The motion recognition apparatus includes a first device, a second device and a controlled device wirelessly connected to the first device and the second device. The first device detects a gesture variation of a user. The second device calculates the number of gesture variations and outputs a corresponding control signal. The second device includes a motion recognition unit and a fast communication unit, enabling the controlled device to receive the control signal and operate according to the gesture variation of the user. Accordingly, the user interface becomes more user-friendly and makes the controlled device more controllable and the Internet of Things (IoT) more applicable.

Abstract: A first network device may establish connectivity with a second network device. The first network device may determine information that identifies a cluster identifier based on establishing connectivity with the second network device. The first network device may compare a first software version of the first network device and a second software version of the second network device. The first network device may selectively obtain and install a system image of the second network device based on comparing the first software version and the second software version. The first network device may receive, from the second network device, configuration information and user session information based on selectively obtaining the system image. The first network device and the second network device may form a high-availability cluster.

Abstract: A motion recognition apparatus and a control method thereof, capable of controlling and operating a controlled device by determining a gesture variation of a user to replace conventional finger touch for a user interface. The motion recognition apparatus includes a first device, a second device and a controlled device wirelessly connected to the first device and the second device. The first device detects a gesture variation of a user. The second device calculates the number of gesture variations and outputs a corresponding control signal. The second device includes a motion recognition unit and a fast communication unit, enabling the controlled device to receive the control signal and operate according to the gesture variation of the user. Accordingly, the user interface becomes more user-friendly and makes the controlled device more controllable and the Internet of Things (IoT) more applicable.

Abstract: Semiconductor devices are provided having large vias, such as under bonding pads, to increase the via open area ratio, increase the via etching rate, and avoid inter-metal dielectric cracking and damage to the integrated circuit. The via is defined as a large open area in the inter-metal dielectric layer between an isolated conductive bottom substrate layer and a conductive top layer. Methods of manufacturing semiconductor devices with a large via are also provided.

Abstract: Semiconductor devices are provided having large vias, such as under bonding pads, to increase the via open area ratio, increase the via etching rate, and avoid inter-metal dielectric cracking and damage to the integrated circuit. The via is defined as a large open area in the inter-metal dielectric layer between an isolated conductive bottom substrate layer and a conductive top layer. Methods of manufacturing semiconductor devices with a large via are also provided.

Abstract: Semiconductor devices are provided having large vias, such as under bonding pads, to increase the via open area ratio, increase the via etching rate, and avoid inter-metal dielectric cracking and damage to the integrated circuit. The via is defined as a large open area in the inter-metal dielectric layer between an isolated conductive bottom substrate layer and a conductive top layer. Methods of manufacturing semiconductor devices with a large via are also provided.