Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.

Abstract: In example implementations described herein, there are systems and methods enabling manufacturers to become more efficient by providing a digital tool to track, visualize, quantify, and notify production bottlenecks for quick actions. Some implementations include an apparatus including a processor configured to analyze time-stamp data collected associated with a plurality of elements of an industrial process. The processor may be configured to generate, based on the analyzed time-stamp data, a color coded visualization of the industrial process, where generating the color coded visualization includes associating each of the plurality of elements of the industrial process with a corresponding color indicating a state of an element in the plurality of elements of the industrial process. The processor may further be configured to present, via a display, the generated color coded visualization of the industrial process.

Abstract: A complex Si—C cathode base units includes a first order Si—C nanoparticle including a plurality of graphene pieces, and a plurality of complex monomers formed by nanometer scale silicide, and first high molecular material. The first high molecular material is used as viscosity for combining the plurality of graphene pieces and the plurality of complex monomers, a plurality of buffer spaces are formed between the plurality of graphene pieces, the complex monomers and the first high molecular material. A second high molecular material layer enclosing the first order SiC nanoparticle, the second high molecular material layer is calcined in a calcination process, so that the carbohydrate therein is carbonized. A plurality of nanometer carbon tubes tightly encloses the second high molecular material layer so that the first order Si—C nanoparticle is difficult to expand. The nanometer carbon tubes have lengths between 15˜25 ?m and are arranged as an array.

Abstract: A method of processing in-memory commands in a high-bandwidth memory (HBM) system includes sending a function-in-HBM instruction to the HBM by a HBM memory controller of a GPU. A logic component of the HBM receives the FIM instruction and coordinates the instructions execution using the controller, an ALU, and a SRAM located on the logic component.

Abstract: The present application provides a method of preparing lithium-friendly colloid paint. The method comprises functionalizing a carbon nanotube material to obtain a plurality of carbon nanotubes with functional groups; dispersing the of carbon nanotube material with functional groups in a solution containing nitrogen molecules to from the dispersion liquid to obtain a carbon nanotube precursor; heat-treating the carbon nanotube precursors to obtain a plurality of nitrogen-doped carbon nanotubes; dispersing the plurality of nitrogen-doped carbon nanotubes in an organic solvent, and adding a dispersant obtain a nitrogen-doped carbon nanotube solution precursor; and providing a polymer material colloid and a lithium salt, and uniformly mixing the nitrogen-doped carbon nanotube solution precursor, the lithium salt and the polymer material colloid.

Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.

Abstract: A method of making solid oxidesolid oxide electrolyte membrane comprises steps (S1)-(S5). Step (S1), mixing a high molecular polymer and a first solvent to form a first mixed slurry; and homogenizing the first mixed slurry, to obtain a reagent A. Step (S2), mixing an oxide powder, a dispersant and a second solvent to form a second mixed slurry, treating the second mixed slurry, to obtain a reagent B. Step (S3), adding a protective agent into the reagent B to form a third mixed slurry, and homogenizing the third mixed slurry to obtain a reagent C. Step (S4), mixing the reagent A and the reagent C to form a fourth mixed slurry, and treating the fourth mixed slurry a fifth mixed slurry; and homogenizating the fifth mixed slurry to form a solid electrolyte slurry. And step (S5), producing the solid oxidesolid oxide electrolyte membrane by a coating process.

Abstract: Provided are an unequal-channel angular self-bending extrusion die and a method for designing and manufacturing the same and extrusion method thereof and includes following steps: designing a symmetrical streamlined extrusion die based on sine function; making the medial axis of the die cavity of the symmetrical streamlined extrusion die twisted and deformed on a certain plane; establishing the die cavity wall surface equation of the unequal-channel angular self-bending extrusion die; setting a working belt structure downstream the die cavity of the unequal-channel angular self-bending extrusion die.

Abstract: A motion recognition apparatus and a control method thereof, capable of controlling and operating a controlled device by determining a gesture variation of a user to replace conventional finger touch for a user interface. The motion recognition apparatus includes a first device, a second device and a controlled device wirelessly connected to the first device and the second device. The first device detects a gesture variation of a user. The second device calculates the number of gesture variations and outputs a corresponding control signal. The second device includes a motion recognition unit and a fast communication unit, enabling the controlled device to receive the control signal and operate according to the gesture variation of the user. Accordingly, the user interface becomes more user-friendly and makes the controlled device more controllable and the Internet of Things (IoT) more applicable.

Abstract: A first network device may establish connectivity with a second network device. The first network device may determine information that identifies a cluster identifier based on establishing connectivity with the second network device. The first network device may compare a first software version of the first network device and a second software version of the second network device. The first network device may selectively obtain and install a system image of the second network device based on comparing the first software version and the second software version. The first network device may receive, from the second network device, configuration information and user session information based on selectively obtaining the system image. The first network device and the second network device may form a high-availability cluster.

Abstract: A motion recognition apparatus and a control method thereof, capable of controlling and operating a controlled device by determining a gesture variation of a user to replace conventional finger touch for a user interface. The motion recognition apparatus includes a first device, a second device and a controlled device wirelessly connected to the first device and the second device. The first device detects a gesture variation of a user. The second device calculates the number of gesture variations and outputs a corresponding control signal. The second device includes a motion recognition unit and a fast communication unit, enabling the controlled device to receive the control signal and operate according to the gesture variation of the user. Accordingly, the user interface becomes more user-friendly and makes the controlled device more controllable and the Internet of Things (IoT) more applicable.

Abstract: Semiconductor devices are provided having large vias, such as under bonding pads, to increase the via open area ratio, increase the via etching rate, and avoid inter-metal dielectric cracking and damage to the integrated circuit. The via is defined as a large open area in the inter-metal dielectric layer between an isolated conductive bottom substrate layer and a conductive top layer. Methods of manufacturing semiconductor devices with a large via are also provided.

Abstract: Semiconductor devices are provided having large vias, such as under bonding pads, to increase the via open area ratio, increase the via etching rate, and avoid inter-metal dielectric cracking and damage to the integrated circuit. The via is defined as a large open area in the inter-metal dielectric layer between an isolated conductive bottom substrate layer and a conductive top layer. Methods of manufacturing semiconductor devices with a large via are also provided.

Abstract: Semiconductor devices are provided having large vias, such as under bonding pads, to increase the via open area ratio, increase the via etching rate, and avoid inter-metal dielectric cracking and damage to the integrated circuit. The via is defined as a large open area in the inter-metal dielectric layer between an isolated conductive bottom substrate layer and a conductive top layer. Methods of manufacturing semiconductor devices with a large via are also provided.

Abstract: Semiconductor devices are provided having large vias, such as under bonding pads, to increase the via open area ratio, increase the via etching rate, and avoid inter-metal dielectric cracking and damage to the integrated circuit. The via is defined as a large open area in the inter-metal dielectric layer between an isolated conductive bottom substrate layer and a conductive top layer. Methods of manufacturing semiconductor devices with a large via are also provided.

Abstract: A reflective rear light for a truck includes a bottom base, a light base, a circuit board, a reflective plate unit and a light lens unit. The circuit board is formed integral, provided with plural LED lights divided into plural indicting sections. Further the LED lights of all the indicating sections are matched with a reflective plate for reflecting light to reinforce the LED lights and to gain better effects.