Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.

Abstract: A method for calibrating defective channels of a CT device involves in a step S10, acquiring original data collected by the CT device; in a step S20, capturing to-be-recovered areas from the original data, wherein the to-be-recovered areas contain the defective channels of the CT device; in a step S30, inputting data of the to-be-recovered areas to a neural network for training so as to generate training results; and in a step S40, using the training results to repair the to-be-recovered areas. The method eliminates effects of artifacts caused by defective channels on image reconstruction.

Abstract: A method for calibrating defective channels of a CT device involves in a step S10, acquiring original data collected by the CT device; in a step S20, capturing to-be-recovered areas from the original data, wherein the to-be-recovered areas contain the defective channels of the CT device; in a step S30, inputting data of the to-be-recovered areas to a neural network for training so as to generate training results; and in a step S40, using the training results to repair the to-be-recovered areas. The method eliminates effects of artifacts caused by defective channels on image reconstruction.

Abstract: The present invention discloses a hydrogenation catalyst comprising metallic palladium supported on activated carbon support, wherein the penetration depth of metallic palladium in the support is at least about 10 ?m and up to about 100 ?m, the crystallite size of palladium is between about 40 ? and about 120 ?, and the palladium in the surface layer from the surface of support to a depth of 1 ?m is from about 5% to about 40% based on the total atom number of palladium and other elements. The present invention further discloses a process for preparing the hydrogenation catalyst, and a use of said hydrogenation catalyst in the purification of crude terephthalic acid.

Abstract: The present invention discloses a hydrogenation catalyst comprising metallic palladium supported on activated carbon support, wherein the penetration depth of metallic palladium in the support is at least about 10 ?m and up to about 100 ?m, the crystallite size of palladium is between about 40 ? and about 120 ?, and the palladium in the surface layer from the surface of support to a depth of 1 ?m is from about 5% to about 40% based on the total atom number of palladium and other elements. The present invention further discloses a process for preparing the hydrogenation catalyst, and a use of said hydrogenation catalyst in the purification of crude terephthalic acid.