Patents by Inventor Zheng Erhu

Zheng Erhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
    Publication number: 20230290865
    Abstract: A semiconductor structure and a forming method thereof are provided.
    Type: Application
    Filed: May 17, 2023
    Publication date: September 14, 2023
    Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Zheng ERHU, Ye YIZHOU, Zhang GAOYING
  • Semiconductor structure and forming method thereof
    Patent number: 11695062
    Abstract: A semiconductor structure and a forming method thereof are provided.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: July 4, 2023
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Zheng Erhu, Ye Yizhou, Zhang Gaoying
  • SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
    Publication number: 20220190143
    Abstract: A semiconductor structure and a forming method thereof are provided.
    Type: Application
    Filed: April 30, 2021
    Publication date: June 16, 2022
    Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Zheng ERHU, YE YIZHOU, ZHANG GAOYING
  • Semiconductor structure and method for forming same
    Patent number: 11211478
    Abstract: A semiconductor structure and method for forming same are provided. The forming method includes: providing a base; forming a discrete core layer on the base; forming a spacer on a sidewall of the core layer; removing the core layer; after the core layer is removed, patterning the base using the spacer as a mask to form a fin, the fin including a device fin and a dummy fin; removing the spacer; performing doping removal on the dummy fin one or more times to remove the dummy fin, the step of the doping removal including: performing ion doping on the entire dummy fin or a part of the dummy fin in thickness for improving an etching selection ratio of the dummy fin to the device fin; and removing the ion-doped dummy fin. Embodiments and implementations of the present disclosure help increase a process window of a fin cut process.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: December 28, 2021
    Assignees: Semiconductor Manufacturing (Shanghai) International Corporation, Semiconductor Manufacturing (Beijing) International Corporation
    Inventors: Zheng Erhu, Liu Panpan
  • SEMICONDUCTOR STRUCURE AND METHOD FOR FORMING SAME
    Publication number: 20210273074
    Abstract: A semiconductor structure and method for forming same are provided. The forming method includes: providing a base; forming a discrete core layer on the base; forming a spacer on a sidewall of the core layer; removing the core layer; after the core layer is removed, patterning the base using the spacer as a mask to form a fin, the fin including a device fin and a dummy fin; removing the spacer; performing doping removal on the dummy fin one or more times to remove the dummy fin, the step of the doping removal including: performing ion doping on the entire dummy fin or a part of the dummy fin in thickness for improving an etching selection ratio of the dummy fin to the device fin; and removing the ion-doped dummy fin. Embodiments and implementations of the present disclosure help increase a process window of a fin cut process.
    Type: Application
    Filed: August 14, 2020
    Publication date: September 2, 2021
    Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Zheng Erhu, Liu Panpan