Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.

Abstract: A method of mounting flip-chip for lowering the on-resistance of power transistor in the protection circuit of rechargeable battery, which comprises a power field effect transistor and a protection IC, has the following steps: first, serially connect drain metal contacts of two transistors to form a chip cell during fabrication of wafer; then, use welding torch to point weld the metal wire on contact of each chip cell, so that the source and gate contacts will form welding metal bumps respectively; cut the wafer to form bare chip cells of two serially connected gate electrodes; stain said chip cell with tin so that said welding metal bumps on contacts are attached with tin balls; apply plastic material to positioned points of printed circuit board; use flip-chip technology to make drain of a bare chip cell face upward, so that said tin balls are aligned with the positioned points of printed circuit board; finally, passing through an oven for heating and pressuring, so that said tin balls will fuse and said pl

Abstract: A method of mounting flip-chip for lowering the on-resistance of power transistor in the protection circuit of rechargeable battery, which comprises a power field effect transistor and a protection IC, has the following steps: first, serially connect drain metal contacts of two transistors to form a chip cell during fabrication of wafer; then, use welding torch to point weld the metal wire on contact of each chip cell, so that the source and gate contacts will form welding metal bumps respectively; cut the wafer to form bare chip cells of two serially connected gate electrodes; stain said chip cell with tin so that said welding metal bumps on contacts are attached with tin balls; apply plastic material to positioned points of printed circuit board; use flip-chip technology to make drain of a bare chip cell face upward, so that said tin balls are aligned with the positioned points of printed circuit board; finally, passing through an oven for heating and pressuring, so that said tin balls will fuse and said pl

Abstract: A method of mounting flip-chip for lowering the on-resistance of power transistor in the protection circuit of rechargeable battery, which comprises a power field effect transistor and a protection IC, has the following steps: first, serially connect drain metal contacts of two transistors to form a chip cell during fabrication of wafer; then, use welding torch to point weld the metal wire on contact of each chip cell, so that the source and gate contacts will form welding metal bumps respectively; cut the wafer to form bare chip cells of two serially connected gate electrodes; stain said chip cell with tin so that said welding metal bumps on contacts are attached with tin balls; apply plastic material to positioned points of printed circuit board; use flip-chip technology to make drain of a bare chip cell face upward, so that said tin balls are aligned with the positioned points of printed circuit board; finally, passing through an oven for heating and pressuring, so that said tin balls will fuse and said pl