Patents by Inventor Zheng Jia Zhen

Zheng Jia Zhen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to enhance inductor Q factor by forming air gaps below inductors
    Patent number: 6835631
    Abstract: A method of enhancing inductor performance comprising the following steps. A structure having a first oxide layer formed thereover is provided. A lower low-k dielectric layer is formed over the first oxide layer. A second oxide layer is formed over the lower low-k dielectric layer. The second oxide layer is patterned to form at least one hole there through exposing a portion of the lower low-k dielectric layer. Etching through the exposed portion of the lower low-k dielectric layer and into the lower low-k dielectric layer to from at least one respective air gap within the etched lower low-k dielectric layer. An upper low-k dielectric layer is formed over the patterned second oxide layer. At least one inductor is formed within the upper low-k dielectric layer and over the at least one air gap whereby the performance of the inductor is enhanced.
    Type: Grant
    Filed: November 20, 2003
    Date of Patent: December 28, 2004
    Assignee: Chartered Semiconductor Manufacturing Ltd
    Inventors: Zheng Jia Zhen, Sanford Chu, Ng Chit Hwei, Lap Chan, Purakh Raj Verma