Abstract: Methods of removing molybdenum oxide from a surface of a substrate comprise exposing the substrate having a molybdenum oxide layer on the substrate to a halide etchant having the formula RmSiX4-m, wherein m is an integer from 1 to 3, X is selected from iodine (I) and bromine (Br) and R is selected from the group consisting of a methyl group, ethyl group, propyl group, butyl group, cyclohexyl group and cyclopentyl group. The methods may be performed in a back-end-of-the line (BEOL) process, and the substrate contains a low-k dielectric material.

Abstract: Embodiments of the disclosure relate to methods of etching a copper material. In some embodiments, the copper material is exposed to a halide reactant to form a copper halide species. The substrate is then heated to remove the copper halide species. In some embodiments, the etching methods are performed at relatively low temperatures. Additional embodiments of the disclosure relate to methods of copper gapfill. In some embodiments, a copper material within a substrate feature is exposed to a halide reactant to form a copper halide species. The copper halide species is then heated and flowed to fill at least a portion of the substrate feature. The reflow methods are performed at lower temperatures than similar reflow methods without formation of the copper halide species.

Abstract: Methods of forming devices comprise forming a dielectric material on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include passivating a metal material at a bottom of the gap with an alkyl reactant to form a passivation layer on the metal material, the gap defined by the bottom and sidewalls comprising the dielectric material with having a barrier layer thereon. A metal liner is selectively deposited on the barrier layer on the sidewall over the passivation layer on the bottom.

Abstract: Methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include forming a hardmask on the dielectric layer; selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap and on the hardmask; treating the microelectronic device with a plasma to remove the self-assembled monolayer (SAM) from the hardmask; forming a barrier layer on the dielectric layer and on the hardmask; selectively depositing a metal liner on the barrier layer on the sidewall; and performing a gap fill process on the metal liner.

Abstract: A sensing circuit (51), a logic circuit board, a joint control board, a main controller board and a robot (400). The sensing circuit (51) comprises a connecting terminal (514) and a detection circuit (210). The connecting terminal (514) is configured to be coupled with the electrode (120) disposed on a housing (100) of a mechanical equipment; the detection circuit (210) is coupled to the connecting terminal (514) so as to detect the distance between the electrode (120) and the external conductor or a change of the distance between the electrode (120) and the external conductor according to the capacitance between the electrode and the external conductor or a change of the capacitance between the electrode (120) and the external conductor, thereby obtaining an electrical signal representing the distance between the electrode (120) and the external conductor or a change of the distance between the electrode (120) and the external conductor.

Abstract: Methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a first self-assembled monolayer (SAM) on the bottom of the gap; forming a barrier layer on the dielectric layer; selectively depositing a second self-assembled monolayer (SAM) on the barrier layer and on the bottom of the gap; treating the microelectronic device with a plasma to remove a first portion of the second self-assembled monolayer (SAM); selectively depositing a metal liner on the barrier layer on the sidewall; removing a second portion of the second self-assembled monolayer (SAM); and performing a gap fill process on the metal liner.

Abstract: Methods for depositing ultra-thin films are disclosed. Some embodiments of the disclosure utilize ultra-thin films as barrier layers, liner layers, or nucleation layers to decrease interconnect resistance. Some embodiments advantageously provide continuous films with thicknesses of less than or equal to about 20 ?. Some embodiments advantageously provide films with decreased roughness.

Abstract: A method of selectively filling a via with a simultaneous liner deposition in a semiconductor structure includes forming a passivation layer selectively on an exposed surface of a conductive layer within a via formed in a dielectric layer formed over the conductive layer, forming a barrier layer selectively on inner sidewalls of the via and a trench formed in the dielectric layer, selectively filling the via with a first conductive material at least partially and simultaneously depositing the first conductive material on the barrier layer on the inner sidewalls of the via and the trench, to form a liner on the inner sidewalls of the via and the trench, and filling the remaining of the via and the trench with a second conductive material.

Abstract: Embodiments of the disclosure relate to methods for forming electrical interconnects. Additional embodiments provide methods of forming and treating barrier and liner layers to improve film and material properties. In some embodiments, the resulting composite layers provide improved resistivity, decrease void formation and improve device reliability.

Abstract: A sensing circuit (51) including a connection terminal (514) configured to couple with an electrode (32) located on a housing of a mechanical device; and a detection circuit (513) configured to couple with the connection terminal (514) to detect a distance between the electrode (32) and an external conductor or a change of the distance between the electrode and an external conductor by utilizing a capacitance between the electrode (32) and the external conductor or a change of the capacitance between the electrode (32) and the external conductor, thus obtaining an electrical signal representing the distance between the electrode (32) and the external conductor or a change of the distance between the electrode (32) and the external conductor. The sensing circuit can perform non-contact distance detection on a grounded object.

Abstract: Methods to deposit a metal cap for an interconnect are disclosed. In embodiments, a method comprises contacting the substrate with an alkyl halide and a ruthenium metal precursor to form a metal cap for an interconnect.

Abstract: A system and a method for controlling the robot. The method includes determining, based on feedback data received from the robot, first position information of a joint of the robot. The feedback data indicates a movement of the joint. The method also includes determining second position information of the joint based on sensing data received from a sensor. The sensing data indicates a relative movement between the joint and a second object to be aligned with the first object. The method also predicts a target position for aligning the first object with the second object.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.

Abstract: Described are methods for forming ruthenium doped niobium nitride barrier layers. The doped barrier layer provides improved adhesion at a thickness of less than about 15 ?.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.

Abstract: Embodiments of this application disclose a method and a system for switching a sound channel of a headset, and a headset terminal, to accurately identify and determine a left-ear wearing status and a right-ear wearing status of a headset terminal, and accurately send a left-channel input audio signal and a right-channel input audio signal. A user does not need to manually switch a left channel and a right channel of the headset terminal. This greatly improves convenience of using the headset terminal.

Abstract: Contacts for solar cells and other optoelectronic devices are provided. Embodiments described herein take advantage of the surface Fermi level pinning effect to build an electrical field inside of a semiconductor to extract or inject carriers for solar cells, photodetectors, and light-emitting device applications. For example, n-type or p-type two-dimensional (2D) materials can be used in contact with an n-type semiconductor to form a “p-region” so that a p-n junction, or an i-n or n-n+ junction can be constructed. Similarly, n-type or p-type 2D materials can be used in contact with a p-type semiconductor to form an “n-region” so that an n-p junction, or an i-p or p-p+ junction can be constructed. These structures can provide sufficiently high electrical field inside the semiconductor to extract photogenerated carriers in solar cells and photodetectors or inject minority carriers for light-emitting devices.

Abstract: A sensing circuit (51), a logic circuit board, a joint control board, a main controller board and a robot (400). The sensing circuit (51) comprises a connecting terminal (514) and a detection circuit (210).

Abstract: A sensing circuit (51) including a connection terminal (514) configured to couple with an electrode (32) located on a housing of a mechanical device; and a detection circuit (513) configured to couple with the connection terminal (514) to detect a distance between the electrode (32) and an external conductor or a change of the distance between the electrode and an external conductor by utilizing a capacitance between the electrode (32) and the external conductor or a change of the capacitance between the electrode (32) and the external conductor, thus obtaining an electrical signal representing the distance between the electrode (32) and the external conductor or a change of the distance between the electrode (32) and the external conductor. The sensing circuit can perform non-contact distance detection on a grounded object.