Patents by Inventor Zheng Min Clarence CHONG

Zheng Min Clarence CHONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11674216
    Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.
    Type: Grant
    Filed: May 13, 2020
    Date of Patent: June 13, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Siew Kit Hoi, Yaoying Zhong, Xinxin Wang, Zheng Min Clarence Chong
  • Patent number: 11557499
    Abstract: Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.
    Type: Grant
    Filed: October 16, 2020
    Date of Patent: January 17, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yuichi Wada, Kok Wei Tan, Chul Nyoung Lee, Siew Kit Hoi, Xinxin Wang, Zheng Min Clarence Chong, Yaoying Zhong, Kok Seong Teo
  • Publication number: 20220122871
    Abstract: Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.
    Type: Application
    Filed: October 16, 2020
    Publication date: April 21, 2022
    Inventors: Yuichi WADA, Kok Wei TAN, Chul Nyoung LEE, Siew Kit HOI, Xinxin WANG, Zheng Min Clarence CHONG, Yaoying ZHONG, Kok Seong TEO
  • Publication number: 20210189545
    Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.
    Type: Application
    Filed: May 13, 2020
    Publication date: June 24, 2021
    Inventors: Siew Kit HOI, Yaoying ZHONG, Xinxin WANG, Zheng Min Clarence CHONG