Abstract: A wavelength division multiplexing transmitter and receiver module utilizes a micromachined silicon substrate as the mounting platform for its optical components and optoelectronic devices including an optical fiber, a transmitter, two receivers, and three microlenses. The micromachined silicon substrate has a V-groove for placing an optical fiber so that it is aligned with the mounted transmitter and the mounted receivers passively and has more V-grooves with slanted end side walls and opposite vertical end side walls used to form a dielectric multilayered filter, a half-mirror, and two anti-reflectors thereon which are eventually incorporated to be a multiplexer and/or a demultiplexer. The microlenses are disposed on V-supports. The transmitter is pre-mounted mounted on a V-submount. The microlens and the transmitter are then mounted into the V-grooves of the micromachined silicon substrate and aligned with the mounted optical fiber passively.

Abstract: Fiber optic interferometric sensors and methods of manufacturing same are disclosed. These sensors comprise a unitary substrate having a channel therein and an axis extending through the channel. The unitary substrate also comprises a reflective surface extending in a plane perpendicular to the axis. An optical fiber having a terminated surface thereon is also provided. The optical fiber extends axially within the channel and is arranged so that the terminated surface and the reflective surface are movable relative to one another in response to a phenomenon to be sensed. The unitary substrate also comprises positioning means integral therewith for positioning the optical fiber within the channel. The method of manufacturing the fiber optic interferometric sensors comprise the steps of providing a unitary substrate and forming a channel therein so that an axis extends therethrough.

Abstract: A silicon accelerometer comprising a substrate, one or more pairs of beams, a pedestal, a mass on top of the pedestal and a cavity beneath the pedestal all of which is formed by a single-sided processing method. The pedestal is suspended over the cavity by the beams which provides the only support for the pedestal. The beams are supported by the substrate. The main steps of fabricating this structure comprise diffusion or ion implantation and epitaxial growth to form a buried high donor concentration layer on the surface of the substrate, chemical vapor deposition and photoetching to expose a portion of the edge of the buried layer to the ambiente, anodization to convert the high donor concentration layer into porous silicon and selectively etching to remove the porous silicon.