Patents by Inventor Zheng-Yang Pan

Zheng-Yang Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210359111
    Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.
    Type: Application
    Filed: December 2, 2020
    Publication date: November 18, 2021
    Inventors: Ya-Wen CHIU, Yi Che CHAN, Lun-Kuang TAN, Zheng-Yang PAN, Cheng-Po CHAU, Pin-Ju LIANG, Hung-Yao CHEN, De-Wei YU, Yi-Cheng LI
  • Patent number: 11171220
    Abstract: A method of forming a gate dielectric material includes forming a high-K dielectric material in a first region over a substrate, where forming the high-K dielectric material includes forming a first dielectric layer comprising hafnium over the substrate, and forming a second dielectric layer comprising lanthanum over the first dielectric layer.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: November 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shahaji B. More, Cheng-Han Lee, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang
  • Patent number: 11152362
    Abstract: A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a fin structure extending above a substrate, and the fin structure has a first portion and a second portion below the first portion, and the first portion and the second portion are made of different materials. The FinFET device structure includes an isolation structure formed on the substrate, and an interface between the first portion and the second portion of the fin structure is above a top surface of the isolation structure. The FinFET device structure includes a liner layer formed on sidewalls of the second portion of the fin structure.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: October 19, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh Wang, Zheng-Yang Pan, Yi-Min Huang, Shih-Chieh Chang, Tsung-Lin Lee
  • Publication number: 20210257263
    Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.
    Type: Application
    Filed: April 16, 2021
    Publication date: August 19, 2021
    Inventors: Shahaji B. More, Zheng-Yang Pan, Shih-Chieh Chang, Chun Chieh Wang
  • Patent number: 11011433
    Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.
    Type: Grant
    Filed: April 20, 2020
    Date of Patent: May 18, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shahaji B. More, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang
  • Publication number: 20210118740
    Abstract: A semiconductor device and method includes: forming a gate stack over a substrate; growing a source/drain region adjacent the gate stack, the source/drain region being n-type doped Si; growing a semiconductor cap layer over the source/drain region, the semiconductor cap layer having Ge impurities, the source/drain region free of the Ge impurities; depositing a metal layer over the semiconductor cap layer; annealing the metal layer and the semiconductor cap layer to form a silicide layer over the source/drain region, the silicide layer having the Ge impurities; and forming a metal contact electrically coupled to the silicide layer.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 22, 2021
    Inventors: Shahaji B. More, Zheng-Yang Pan, Cheng-Han Lee, Shih-Chieh Chang
  • Patent number: 10879396
    Abstract: A method for forming a semiconductor device is provided. The method includes forming a gate stack to partially cover a semiconductor structure. The method also includes forming a first semiconductor material over the semiconductor structure. The method further includes forming a second semiconductor material over the first semiconductor material. In addition, the method includes forming a third semiconductor material over the second semiconductor material. The first semiconductor material and the third semiconductor material together surround the second semiconductor material. The second semiconductor material has a greater dopant concentration than that of the first semiconductor material or that of the third semiconductor material.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shahaji B. More, Zheng-Yang Pan, Chun-Chieh Wang, Cheng-Han Lee, Shih-Chieh Chang
  • Patent number: 10879124
    Abstract: The present disclosure describes an exemplary fabrication method of a p-type fully strained channel that can suppress the formation of {111} facets during a silicon germanium epitaxial growth. The exemplary method includes the formation of silicon epitaxial layer on a top, carbon-doped region of an n-type region. A recess is formed in the silicon epitaxial layer via etching, where the recess exposes the top, carbon-doped region of the n-type region. A silicon seed layer is grown in the recess, and a silicon germanium layer is subsequently epitaxially grown on the silicon seed layer to fill the recess. The silicon seed layer can suppress the formation of growth defects such as, for example, {111} facets, during the silicon germanium epitaxial layer growth.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh Wang, Huai-Tei Yang, Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee
  • Patent number: 10879126
    Abstract: A semiconductor device and method includes: forming a gate stack over a substrate; growing a source/drain region adjacent the gate stack, the source/drain region being n-type doped Si; growing a semiconductor cap layer over the source/drain region, the semiconductor cap layer having Ge impurities, the source/drain region free of the Ge impurities; depositing a metal layer over the semiconductor cap layer; annealing the metal layer and the semiconductor cap layer to form a silicide layer over the source/drain region, the silicide layer having the Ge impurities; and forming a metal contact electrically coupled to the silicide layer.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shahaji B. More, Zheng-Yang Pan, Cheng-Han Lee, Shih-Chieh Chang
  • Patent number: 10879240
    Abstract: A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a fin structure extending above a substrate. The fin structure includes a channel region, a portion of the channel region is made of silicon germanium (SiGe), and the silicon germanium (SiGe) has a gradient germanium (Ge) concentration. The FinFET device structure includes a gate structure formed on the channel region of the fin structure.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh Wang, Zheng-Yang Pan, Shih-Chieh Chang, Yi-Min Huang, Shahaji B. More, Tsung-Lin Lee
  • Patent number: 10867799
    Abstract: A FinFET device and method of forming the same are disclosed. The method includes forming a gate dielectric layer and depositing a metal oxide layer over the gate dielectric layer. The method also includes annealing the gate dielectric layer and the metal oxide layer, causing ions to diffuse from the metal oxide layer to the gate dielectric layer to form a doped gate dielectric layer. The method also includes forming a work function layer over the doped gate dielectric layer, and forming a gate electrode over the work function layer.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun Chieh Wang, Zheng-Yang Pan, Shih-Chieh Chang, Cheng-Han Lee, Huai-Tei Yang, Shahaji B. More
  • Publication number: 20200365720
    Abstract: A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and forming in the recess a first semiconductor layer having a dopant, the first semiconductor layer being non-conformal, the first semiconductor layer lining the recess and extending from a bottom of the recess to a top of the recess. The method further includes forming a second semiconductor layer having the dopant in the recess and over the first semiconductor layer, a second concentration of the dopant in the second semiconductor layer being higher than a first concentration of the dopant in the first semiconductor layer.
    Type: Application
    Filed: August 3, 2020
    Publication date: November 19, 2020
    Inventors: Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee
  • Publication number: 20200295157
    Abstract: A method of forming a gate dielectric material includes forming a high-K dielectric material in a first region over a substrate, where forming the high-K dielectric material includes forming a first dielectric layer comprising hafnium over the substrate, and forming a second dielectric layer comprising lanthanum over the first dielectric layer.
    Type: Application
    Filed: June 1, 2020
    Publication date: September 17, 2020
    Inventors: Shahaji B. More, Cheng-Han Lee, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang
  • Publication number: 20200251390
    Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.
    Type: Application
    Filed: April 20, 2020
    Publication date: August 6, 2020
    Inventors: Shahaji B. More, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang
  • Patent number: 10734524
    Abstract: A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and forming in the recess a first semiconductor layer having a dopant, the first semiconductor layer being non-conformal, the first semiconductor layer lining the recess and extending from a bottom of the recess to a top of the recess. The method further includes forming a second semiconductor layer having the dopant in the recess and over the first semiconductor layer, a second concentration of the dopant in the second semiconductor layer being higher than a first concentration of the dopant in the first semiconductor layer.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: August 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee
  • Publication number: 20200243683
    Abstract: A method for forming a semiconductor device is provided. The method includes forming a gate stack to partially cover a semiconductor structure. The method also includes forming a first semiconductor material over the semiconductor structure. The method further includes forming a second semiconductor material over the first semiconductor material. In addition, the method includes forming a third semiconductor material over the second semiconductor material. The first semiconductor material and the third semiconductor material together surround the second semiconductor material. The second semiconductor material has a greater dopant concentration than that of the first semiconductor material or that of the third semiconductor material.
    Type: Application
    Filed: April 17, 2020
    Publication date: July 30, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shahaji B. MORE, Zheng-Yang PAN, Chun-Chieh WANG, Cheng-Han LEE, Shih-Chieh CHANG
  • Patent number: 10672886
    Abstract: A method of forming a gate dielectric material includes forming a high-K dielectric material in a first region over a substrate, where forming the high-K dielectric material includes forming a first dielectric layer comprising hafnium over the substrate, and forming a second dielectric layer comprising lanthanum over the first dielectric layer.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: June 2, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shahaji B. More, Cheng-Han Lee, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang
  • Publication number: 20200152742
    Abstract: The present disclosure describes an exemplary method to form p-type fully strained channel (PFSC) or an n-type fully strained channel (NFSC) that can mitigate epitaxial growth defects or structural deformations in the channel region due to processing. The exemplary method can include (i) two or more surface pre-clean treatment cycles with nitrogen trifluoride (NF3) and ammonia (NH3) plasma, followed by a thermal treatment; (ii) a prebake (anneal); and (iii) a silicon germanium epitaxial growth with a silicon seed layer, a silicon germanium seed layer, or a combination thereof.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shahaji B. More, Huai-Tei YANG, Zheng-Yang PAN, Shih-Chieh CHANG, Chun-Chieh WANG, Cheng-Han Lee
  • Patent number: 10636909
    Abstract: A method for forming a semiconductor device is provided. The method includes forming a gate stack to partially cover a semiconductor structure. The method also includes forming a first semiconductor material over the semiconductor structure. The method further includes forming a second semiconductor material over the first semiconductor material. In addition, the method includes forming a third semiconductor material over the second semiconductor material. The first semiconductor material and the third semiconductor material together surround the second semiconductor material. The second semiconductor material has a greater dopant concentration than that of the first semiconductor material or that of the third semiconductor material.
    Type: Grant
    Filed: December 24, 2018
    Date of Patent: April 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shahaji B. More, Zheng-Yang Pan, Chun-Chieh Wang, Cheng-Han Lee, Shih-Chieh Chang
  • Patent number: 10629496
    Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: April 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shahaji B. More, Zheng-Yang Pan, Chun-Chieh Wang, Shih-Chieh Chang