Abstract: Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion or by using an excess of the alkanol produced in preparing the synthesis composition.

Abstract: Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion or by using an excess of the alkanol produced in preparing the synthesis composition.

Abstract: Metal surfaces are protected against corrosion by a coating of molecular sieve, notably a zeolite or a phosphate-containing molecular sieve, rendered substantially non-porous by the retention (or addition) of a pore-filling member inside the voids of the molecular sieve crystal structure. Pore-filling agents convenient for use include species typically used as structure-directing agents in the synthesis of zeolites and other molecular sieves. A further aspect of the invention is a method of protecting a metal surface from corrosion by crystallizing a molecular sieve in situ on the metal surface.

Abstract: Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion or by using an excess of the alkanol produced in preparing the synthesis composition.

Abstract: Metal surfaces are protected against corrosion by a coating of molecular sieve, notably a zeolite or a phosphate-containing molecular sieve, rendered substantially non-porous by the retention (or addition) of a pore-filling member inside the voids of the molecular sieve crystal structure. Pore-filling agents convenient for use include species typically used as structure-directing agents in the synthesis of zeolites and other molecular sieves. A further aspect of the invention is a method of protecting a metal surface from corrosion by crystallizing a molecular sieve in situ on the metal surface.

Abstract: Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion or by using an excess of the alkanol produced in preparing the synthesis composition.