Abstract: A method for manufacturing a semiconductor device including: preparing a semiconductor substrate with a gate oxide layer on the top thereof; depositing a polycrystalline silicon layer on the top of the semiconductor substrate; depositing a protection layer overlying the top of the polycrystalline silicon layer; etching the protection layer and the polycrystalline silicon layer to form a gate body block; forming an oxide layer overlying the gate body block and the semiconductor substrate; polishing the oxide layer through Chemical Mechanical Polishing (CMP) until the top of the gate body block; removing the protection layer on the top of the gate body block; and forming a metal silicide layer on the gate body block.

Abstract: A method for manufacturing a semiconductor device including: preparing a semiconductor substrate with a gate oxide layer on the top thereof; depositing a polycrystalline silicon layer on the top of the semiconductor substrate; depositing a protection layer overlying the top of the polycrystalline silicon layer; etching the protection layer and the polycrystalline silicon layer to form a gate body block; forming an oxide layer overlying the gate body block and the semiconductor substrate; polishing the oxide layer through Chemical Mechanical Polishing (CMP) until the top of the gate body block; removing the protection layer on the top of the gate body block; and forming a metal silicide layer on the gate body block.

Abstract: The invention provides a semiconductor device and a method of manufacturing the same. The inventive method includes: 1) forming a pad oxide layer on a substrate; 2) forming on the pad oxide layer a barrier layer with an isolation region pattern exposing the surface of the pad oxide layer; 3) injecting ions so that the ions enter the substrate through the surface of the pad oxide layer exposed by the isolation region pattern; 4) performing heat treatment the substrate to transversely diffuse the ions in the substrate to form an ion injection layer; 5) etching the pad oxide layer and the ion injection layer using the barrier layer with the isolation region pattern as a mask to form a shallow trench isolation region on the substrate; and 6) forming a field oxide layer in the shallow trench isolation region of the substrate.