Patents by Inventor Zhengjiang "David" CUI

Zhengjiang "David" CUI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SILICON NITRIDE PASSIVATION LAYER FOR COVERING HIGH ASPECT RATIO FEATURES
    Publication number: 20110223765
    Abstract: A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.
    Type: Application
    Filed: March 15, 2010
    Publication date: September 15, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Ryan YAMASE, Ji Ae PARK, Shamik PATEL, Thomas NOWAK, Zhengjiang "David" CUI, Mehul NAIK, Heung Lak PARK, Ran DING, Bok Hoen KIM