Patents by Inventor Zhengliang Li

Zhengliang Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250151504
    Abstract: An array substrate includes a base substrate, a first conductive layer, a first electrode, an organic planarization layer and an organic active layer. The first conductive layer is provided on a side of the base substrate. The first electrode is provided on a side of the first conductive layer away from the base substrate, an orthographic projection of the first electrode on the base substrate overlapping an orthographic projection of the drain electrode on the base substrate. The organic planarization layer is provided on a side of the first electrode away from the base substrate, first via holes being provided in the organic planarization layer. The organic active layer is provided on a side of the organic planarization layer away from the base substrate, the organic active layer being connected to the source electrode by a first via hole and connected to the drain electrode by a first via hole.
    Type: Application
    Filed: January 13, 2025
    Publication date: May 8, 2025
    Applicant: BOE Technology Group Co., Ltd.
    Inventors: Guangcai YUAN, Hehe HU, Changhan HSIEH, Wei YANG, Liwen DONG, Jiayu HE, Dongfei HOU, Zhen ZHANG, Ce NING, Xin GU, Zhengliang LI
  • Patent number: 12272754
    Abstract: A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: April 8, 2025
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Jiayu He, Ce Ning, Zhengliang Li, Hehe Hu, Jie Huang, Nianqi Yao, Zhi Wang, Feng Guan
  • Publication number: 20250113541
    Abstract: An oxide thin film transistor, a preparation method thereof, and an electronic device are provided. The oxide thin film transistor includes a base substrate, a gate electrode and a metal oxide semiconductor layer, a gate insulation layer arranged between the metal oxide semiconductor layer and the gate electrode; the gate insulation layer includes a silicon oxide insulation layer and a silicon nitride layer, the silicon nitride layer adopts a single-layer structure or include a plurality of silicon nitride sublayers which are sequentially stacked, the silicon oxide insulation layer is between the silicon nitride layer and the metal oxide semiconductor layer; at least a part of a region in the silicon nitride layer satisfies that the percentage content of Si—H bonds in the sum of Si—N bonds, N—H bonds and Si—H bonds is not more than 7.
    Type: Application
    Filed: August 24, 2022
    Publication date: April 3, 2025
    Inventors: Lizhong WANG, Guangcai YUAN, Ce NING, Hehe HU, Nianqi YAO, Dapeng XUE, Shuilang DONG, Liping LEI, Dongfang WANG, Zhengliang LI
  • Publication number: 20250098212
    Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include at least one of indium, gallium and zinc. Praseodymium is doped into the channel layer. And, in the channel layer, a number density of praseodymium atoms in the channel layer gradually decreases with a distance from the first protection layer.
    Type: Application
    Filed: November 28, 2024
    Publication date: March 20, 2025
    Inventors: Jie HUANG, Jiayu HE, Ce NING, Zhengliang LI, Hehe HU, Fengjuan LIU, Nianqi YAO, Kun ZHAO, Tianmin ZHOU, Jiushi WANG, Zhongpeng TIAN
  • Publication number: 20250098064
    Abstract: A circuit board includes a substrate, a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer includes a plurality of first conductive portions. The second conductive layer includes a plurality of second conductive portions. A second conductive portion passes through a first via hole in the first insulating layer to be in electrical contact with a first conductive portion. The first conductive layer and the second conductive layer each include at least one main conductive layer, which is capable of creating a first intermetallic compound with solder. At least one of the first conductive layer and the second conductive layer further includes a stop layer capable of creating a second intermetallic compound with the solder. A rate of a reaction between the stop layer and the solder is lower than a rate of a reaction between the main conductive layer and the solder.
    Type: Application
    Filed: October 31, 2022
    Publication date: March 20, 2025
    Inventors: Nianqi YAO, Kun ZHAO, Ce NING, Zhengliang LI, Zhanfeng CAO, Ke WANG, Jiaxiang ZHANG, Qi QI, Hehe HU, Feifei LI, Jie HUANG, Jiayu HE
  • Publication number: 20250089303
    Abstract: A thin film transistor, a shift register unit, a gate driving circuit and a display panel are provided. The M source branches and the N drain branches extend along a first direction and are arranged at intervals; in each of the P source-drain units, the M source branches and the N drain branches are alternately arranged, and M is greater than or equal to N; a semiconductor layer includes sub-channel regions between one drain branch and one source branch adjacent to each other; a sum of widths of the sub-channel regions of the P source-drain units in the first direction is W, and an average length of the sub-channel regions of the P source-drain units in a direction perpendicular to the first direction is L; 12?W/L?400, P, M and N are integers greater than or equal to 1, and P×N?4.
    Type: Application
    Filed: June 30, 2022
    Publication date: March 13, 2025
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Lizhong WANG, Guangcai YUAN, Ce NING, Hehe HU, Nianqi YAO, Dongfang WANG, Zhengliang LI, Liping LEI, Chen XU
  • Patent number: 12233410
    Abstract: A microfluidic channel backplane includes a base, and a plurality of microfluidic channels, a sample-adding channel and an enrichment channel that are disposed above the base. Each microfluidic channel of the plurality of microfluidic channels includes a first end and a second end. The sample-adding channel is communicated with first ends of the plurality of microfluidic channels. The enrichment channel includes a first enrichment sub-channel and a second enrichment sub-channel. The first enrichment sub-channel is communicated with second ends of the plurality of microfluidic channels, and one end of the second enrichment sub-channel is communicated with the first enrichment sub-channel.
    Type: Grant
    Filed: January 23, 2020
    Date of Patent: February 25, 2025
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xiaochen Ma, Ce Ning, Chao Li, Jiayu He, Xueyuan Zhou, Xiao Zhang, Xin Gu, Zhengliang Li, Guangcai Yuan
  • Patent number: 12226772
    Abstract: A biochip and a method for manufacturing the same are provided. The biochip includes: a guide layer; a channel layer on the guide layer, wherein the channel layer has therein a plurality of first channels extending in a first direction; a plurality of second channels extending in a second direction, wherein each of the plurality of second channels is in communication with the plurality of first channels, the plurality of second channels are in a layer where the channel layer is located, or in a layer where the channel layer and the guide layer are located; an encapsulation cover plate on a side of the channel layer distal to the guide layer; and a driving unit configured to drive biomolecules to move.
    Type: Grant
    Filed: January 22, 2021
    Date of Patent: February 18, 2025
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xiaochen Ma, Ce Ning, Guangcai Yuan, Xin Gu, Zhengliang Li
  • Publication number: 20250031447
    Abstract: A display substrate, including: a base substrate; and a metal conductive layer, located at a side of the base substrate, and including a core conductive layer and a functional conductive layer laminated along a direction away from the base substrate; a material of the core conductive layer includes a conductive metal material; a material of the functional conductive layer includes a first diffusion barrier metal material and a first adhesion force enhancing metal material, wherein the first diffusion barrier metal material is configured to block diffusion of the conductive metal material, and the first adhesion force enhancing metal material is configured to enhance an adhesion force between the functional conductive layer and a photoresist used in a patterning process of the functional conductive layer; a surface energy of any of first adhesion force enhancing metal materials is less than or equal to 325 mJ/m2.
    Type: Application
    Filed: October 31, 2022
    Publication date: January 23, 2025
    Inventors: Zhengliang LI, Guangcai YUAN, Ce NING, Zhonghao HUANG, Zhixiang ZOU, Zhangtao WANG, Jie HUANG, Nianqi YAO, Jiayu HE, Hehe HU, Feifei LI, Kun ZHAO, Chen XU, Hui GUO
  • Patent number: 12183824
    Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: December 31, 2024
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Jie Huang, Jiayu He, Ce Ning, Zhengliang Li, Hehe Hu, Fengjuan Liu, Nianqi Yao, Kun Zhao, Tianmin Zhou, Jiushi Wang, Zhongpeng Tian
  • Publication number: 20240379631
    Abstract: A light-emitting substrate and a display device are disclosed, the light-emitting substrate includes: a base substrate including a light-emitting region; a plurality of first pads on a side of the base substrate and in the light-emitting region, where a material of the first pads includes Cu; and an oxidation protection layer on a side of the first pads away from the base substrate, where the plurality of first pads is used for bonding connection with a plurality of light-emitting units through the oxidation protection layer, a material of the oxidation protection layer includes CuNiX, and X includes one or any combination of Al, Sn, Pb, Au, Ag, In, Zn, Bi, Mg, Ga, V, W, Y, Zr, Mo, Nb, Pt, Co or Sb.
    Type: Application
    Filed: October 22, 2021
    Publication date: November 14, 2024
    Inventors: Nianqi YAO, Jin YANG, Ce NING, Jiayu HE, Jie HUANG, Hehe HU, Kun ZHAO, Feifei LI, Zhengliang LI, Guangcai YUAN
  • Publication number: 20240371887
    Abstract: A thin film transistor includes a first active layer, a second active layer, a first electrode, a second electrode and a third electrode. The first active layer includes a first surface away from a substrate. The second active layer includes a second surface in contact with the first surface. The first electrode, the first active layer and the second active layer have an overlapping region. The second electrode, the first active layer and the second active layer have an overlapping region. The third electrode, the first active layer and the second active layer have an overlapping region, and the third electrode is opposite to the second electrode. The second surface is located within the first surface, and a distance between at least part of a border of the second surface and a border of the first surface is less than or equal to 0.5 ?m.
    Type: Application
    Filed: July 16, 2024
    Publication date: November 7, 2024
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yuhang LU, Fengjuan LIU, Hehe HU, Zhengliang LI, Ce NING, Guangcai YUAN, Dandan ZHOU, Cheng XU
  • Publication number: 20240361628
    Abstract: A photodetection backplane, a liquid crystal display panel and a liquid crystal display apparatus are provided. The photodetection backplane includes: a base substrate; a first organic switching unit arranged at a side of the base substrate; and an organic photodetector arranged at a same side of the base substrate as the first organic switching unit. The organic photodetector is electrically connected to the first organic switching unit, and at least one film layer of the organic photodetector and a film layer of the first organic switching unit are arranged in a same layer and made of a same material. (FIG.
    Type: Application
    Filed: July 10, 2024
    Publication date: October 31, 2024
    Applicant: BOE Technology Group Co., Ltd.
    Inventors: Guangcai YUAN, Hehe HU, Changhan HSIEH, Shipei LI, Jiayu HE, Xin GU, Ce NING, Zhengliang LI
  • Publication number: 20240355978
    Abstract: A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.
    Type: Application
    Filed: April 21, 2022
    Publication date: October 24, 2024
    Inventors: Nianqi YAO, Zhongpeng TIAN, Ce NING, Zhengliang LI, Hehe HU, Jie HUANG, Jiayu HE, Feifei LI, Kun ZHAO, Yimin CHEN
  • Publication number: 20240332425
    Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.
    Type: Application
    Filed: March 30, 2022
    Publication date: October 3, 2024
    Inventors: Jiayu HE, Fangqing WEN, Ce NING, Hehe HU, Nianqi YAO, Kun ZHAO, Zhengliang LI, Jie HUANG, Feifei LI, Yan QU, Liping LEI
  • Publication number: 20240334762
    Abstract: An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.
    Type: Application
    Filed: June 12, 2024
    Publication date: October 3, 2024
    Inventors: Jiayu HE, Ce NING, Zhengliang LI, Hehe HU, Jie HUANG, Nianqi YAO, Xue LIU
  • Publication number: 20240329478
    Abstract: An array substrate and a manufacturing method therefor, and a display apparatus are provided. The array substrate includes an underlay substrate, and at least one first transistor, at least one data line and at least one pixel electrode disposed on the underlay substrate. The at least one first transistor includes a first active layer and a first gate; the first gate is located on a side of the first active layer away from the underlay substrate, and orthographic projections of the first gate and the first active layer on the underlay substrate are at least partially overlapped. The first active layer is electrically connected to the data line and the pixel electrode, respectively. The data line is located on a side of the first active layer close to the underlay substrate, and the pixel electrode is located on a side of the first gate away from the underlay substrate.
    Type: Application
    Filed: April 18, 2024
    Publication date: October 3, 2024
    Inventors: Guangcai YUAN, Hehe HU, Ce NING, Hui GUO, Fengjuan LIU, Dongfang WANG, Zhengliang LI, Jiayu HE
  • Patent number: 12107203
    Abstract: Disclosed are a light-emitting substrate and a display device. In the light-emitting substrate, a first pad of a light-emitting area includes a first metal layer located above a base substrate and a second metal layer located on a side, facing away from the base substrate, of the first metal layer. A material of the second metal layer includes copper-nickel-titanium alloy, and a quantity of nickel atoms and/or titanium atoms contained per unit area in a cross section, farther from the base substrate, of the second metal layer is greater than a quantity of nickel atoms and/or titanium atoms contained per unit area in another cross section, closer to the base substrate, of the second metal layer.
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: October 1, 2024
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Song Liu, Zhengliang Li, Kun Zhao, Feifei Li, Qi Qi
  • Publication number: 20240304698
    Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.
    Type: Application
    Filed: March 30, 2022
    Publication date: September 12, 2024
    Inventors: Jiayu HE, Yan QU, Liping LEI, Ce NING, Zhengliang LI, Hehe HU, Jie HUANG, Nianqi YAO, Kun ZHAO, Feifei LI
  • Publication number: 20240297255
    Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.
    Type: Application
    Filed: November 29, 2021
    Publication date: September 5, 2024
    Inventors: Jie HUANG, Ce NING, Zhengliang LI, Hehe HU, Jiayu HE, Nianqi YAO, Kun ZHAO, Feifei LI, Liping LEI