Abstract: An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.

Abstract: A display substrate, a display device, and a method of forming a display substrate are provided. The display substrate includes: a flexible base substrate and a plurality of pixel islands arranged on the flexible base substrate, where the plurality of pixel islands are arranged in an array, two adjacent pixel islands are connected through an island bridge, display units are arranged on the pixel islands, the display units on the pixel islands are electrically connected through an inter-island connection line arranged on the island bridge, a region outside the pixel islands and the island bridge is a hollow area, and axes of four island bridges around the hollow area are arranged as a parallelogram.

Abstract: The present disclosure provides a transistor, an array substrate and a method of manufacturing the array substrate, and a display device. The method of manufacturing the array substrate comprises: depositing a plurality of silicon oxide layers on an active layer of a transistor; and depositing a silicon oxynitride layer over the plurality of silicon oxide layers.

Abstract: The present disclosure provides a thickness measuring method and device. The thickness measuring method is used for measuring a thickness of a layer to be measured of a light-transmitting sample to be measured and comprising the steps of: placing the sample to be measured between an optical device and a metal layer, the optical device comprising a light incident surface and a light exit surface; adjusting incident light emitted to the light incident surface of the optical device so that an intensity of light exiting the light exit surface of the optical device is less than 10?12 W/m2, so as to obtain optical parameters of the incident light; and calculating a thickness of the layer to be measured according to the optical parameters of the incident light.

Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

Abstract: A switch element, an array substrate, a display panel, and a display device are disclosed. The switch element includes: a first electrode, an insulation layer, where the first electrode is located on a first side of the insulation layer; a second electrode and a third electrode arranged spaced from each other, both of which are located on a second side of the insulation layer away from the first electrode; and a first oil ink located between the second electrode and the third electrode, where the first oil ink is electrically conductive, and configured to connect or disconnect the second electrode with or from the third electrode under control of the first electrode.

Abstract: A switch element, an array substrate, a display panel, and a display device are disclosed. The switch element includes: a first electrode, an insulation layer, where the first electrode is located on a first side of the insulation layer; a second electrode and a third electrode arranged spaced from each other, both of which are located on a second side of the insulation layer away from the first electrode; and a first oil ink located between the second electrode and the third electrode, where the first oil ink is electrically conductive, and configured to connect or disconnect the second electrode with or from the third electrode under control of the first electrode.

Abstract: A system and a method for detecting a substrate and a manufacturing device are disclosed. The detection system includes: an emitting unit and a control unit; wherein the emitting unit provides a first reference light and a second reference light, the first reference light propagates to the control unit, the second reference light is modulated by the substrate to generate a test light, the test light propagates to the control unit; the control unit obtains and compares a power of the first reference light and a power of the test light so as to determine whether a foreign matter is present on a surface of the substrate. The detection system can prevent foreign matters such as photoresist from influencing other manufacturing devices such as cleaning and deposition devices, which is beneficial to the maintenance and service of the manufacturing devices.

Abstract: The disclosure relates to a method, a terminal and a non-transitory computer-readable storage medium for preventing a display from image-sticking. The method includes acquiring a target image frame to be displayed; determining image information of each display unit in the target image frame; determining, based on the image information of each display unit in the target image frame, at least one target display unit having respective image information that has not changed for a duration that is equal to or greater than a preset duration threshold; and changing an image of the at least one target display unit in a consecutive preset number of image frames.

Abstract: The present invention relates to a preparation method for a traditional Chinese medicine drop pill and a traditional Chinese medicine micro drop pill prepared by using the method, and in particular, the present invention relates to a micro drop pill preparation method with high drug-loading capacity, simple preparation process and high production rate and a micro drop pill prepared by using the method. Specially, The drop pill preparation method used comprises the following steps: (1) material melting step: heat melting a medicine and a drop pill matrix to obtain a molten medicine liquid; (2) dropping step: delivering the molten medicine liquid to a dripper, and acquiring medicine drops of the molten medicine liquid by means of vibration dropping; and, (3) condensation step: cooling the medicine drops with a cooling gas to obtain micro drop pills.

Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

Abstract: An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.

Abstract: A traditional Chinese medicine composition and preparation thereof for treating cardiovascular diseases is provided. The traditional Chinese medicine composition consists of: by weight percentage, phenolic acid derivatives 30%˜80%, tanshinones 2%˜10% and saponins 15%˜60%.

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.

Abstract: The present disclosure provides a thickness measuring method and device. The thickness measuring method is used for measuring a thickness of a layer to be measured of a light-transmitting sample to be measured and comprising the steps of: placing the sample to be measured between an optical device and a metal layer, the optical device comprising a light incident surface and a light exit surface; adjusting incident light emitted to the light incident surface of the optical device so that an intensity of light exiting the light exit surface of the optical device is less than 10?12 W/m2, so as to obtain optical parameters of the incident light; and calculating a thickness of the layer to be measured according to the optical parameters of the incident light.

Abstract: A data transmitting method, a data receiving method and the related device and system are provided. The data transmitting device includes a display screen, a first determination module, configured to determine one or more transmitting regions of the display screen, and a transmitting module, configured to transmit, by controlling a display of the one or more transmitting regions, target data in a format of a machine language via optical signals. The data receiving device includes a panel on which a plurality of optical sensors is arranged, a second determination module, configured to determine one or more receiving regions of the panel each corresponding to one or more of the optical sensor, and a receiving module, configured to receive, through each optical sensor in the one or more receiving regions, target data in a format of a machine language transmitted via optical signals.

Abstract: A use of metallic nano-particles, a dye-sensitized solar cell and a method for fabricating the same are disclosed. The dye-sensitized solar cell includes: an electrode; a semiconductor layer arranged on the electrode and comprising dye molecules; a metallic nano-particle layer arranged on a side of the semiconductor layer away from the electrode; and a counter electrode arranged on a side of the metallic nano-particle layer away from the semiconductor layer.

Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.

Abstract: An array substrate and a display device are provided. The array substrate comprises a plurality of signal lines (40), a plurality of connecting lines (50) and a driving module (60) in a peripheral region (1) outside a display region (2); the connecting lines (50) are configured for connecting the signal lines (40) and the driving module (60), to transmit signal from the signal lines (40) to the driving module (60), wherein, at least one of the connecting lines (50) and at least one of the signal lines (40) are designed to intersect with and insulated from each other in a first region (N). The at least one of the signal lines (40) includes, in a second region (0) other than the first region (N), a first electrode line layer (401) and a second electrode line layer (402), while, in the first region (N), includes the first electrode line layer (401) but does not include the second electrode line layer (402).

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.