Patents by Inventor ZHENGLING CHEN

ZHENGLING CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fin field-effect transistor
    Patent number: 10431671
    Abstract: A method is provided for fabricating fin field-effect transistors. The method includes providing a substrate. The method also includes forming a plurality of fins on a surface of the substrate. Further the method includes forming a transitional layer having atoms identical to atoms of the fins on side and top surfaces of the plurality of fins by a deposition process. Further, the method also includes performing an oxidation process to convert the transitional layer and a surface portion of the fins into a dielectric material to form a gate dielectric layer on the plurality of fins.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: October 1, 2019
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Xiaopeng Yu, Youfeng He, Zhengling Chen
  • FIN FIELD-EFFCT TRANSISTOR
    Publication number: 20180097090
    Abstract: A method is provided for fabricating fin field-effect transistors. The method includes providing a substrate. The method also includes forming a plurality of fins on a surface of the substrate. Further the method includes forming a transitional layer having atoms identical to atoms of the fins on side and top surfaces of the plurality of fins by a deposition process. Further, the method also includes performing an oxidation process to convert the transitional layer and a surface portion of the fins into a dielectric material to form a gate dielectric layer on the plurality of fins.
    Type: Application
    Filed: December 7, 2017
    Publication date: April 5, 2018
    Inventors: XIAOPENG YU, YOUFENG HE, ZHENGLING CHEN
  • Fin field-effect transistor and fabrication method thereof
    Patent number: 9871120
    Abstract: A method is provided for fabricating fin field-effect transistors. The method includes providing a substrate. The method also includes forming a plurality of fins on a surface of the substrate. Further the method includes forming a transitional layer having atoms identical to atoms of the fins on side and top surfaces of the plurality of fins by a deposition process. Further, the method also includes performing an oxidation process to convert the transitional layer and a surface portion of the fins into a dielectric material to form a gate dielectric layer on the plurality of fins.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: January 16, 2018
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Xiaopeng Yu, Youfeng He, Zhengling Chen
  • FIN FIELD-EFFCT TRANSISTOR AND FABRICATION METHOD THEREOF
    Publication number: 20150380241
    Abstract: A method is provided for fabricating fin field-effect transistors. The method includes providing a substrate. The method also includes forming a plurality of fins on a surface of the substrate. Further the method includes forming a transitional layer having atoms identical to atoms of the fins on side and top surfaces of the plurality of fins by a deposition process. Further, the method also includes performing an oxidation process to convert the transitional layer and a surface portion of the fins into a dielectric material to form a gate dielectric layer on the plurality of fins.
    Type: Application
    Filed: May 14, 2015
    Publication date: December 31, 2015
    Inventors: XIAOPENG YU, YOUFENG HE, ZHENGLING CHEN