Abstract: The display panel comprises a display region and a bonding region, the bonding region comprises a display substrate and a first adhesive layer, a polarizing layer, a second adhesive layer and a cover plate layer arranged sequentially on a light exit side of the display substrate, the first adhesive layer and the polarizing layer are disposed in a lead region, a bending region and a composite circuit region in the bonding region, the cover plate layer is provided with a cover plate shield layer, at least one of the display substrate, the first adhesive layer and the polarizing layer is provided with a bonding shield layer, the distance between an edge of the bonding shield layer and the boundary of the display region is less than the distance between an edge of the cover plate shield layer and the boundary of the display region.

Abstract: A flexible display module includes a flexible display substrate, a cover layer provided on a display side of the flexible display substrate, and a support layer on a side of the flexible display substrate facing away from the display side; the cover layer includes a first flexible film material and a first graphene layer on a surface of the first flexible film material facing away from the flexible display substrate; the support layer includes a rigid material layer and a first flexible material layer, the rigid material layer includes a hollowed region and non-hollowed regions located on two sides of the hollowed region, a width of the hollowed region is larger than a width of the bending region of the flexible display module, the first flexible material layer is provided on a surface of the rigid material layer facing the flexible display substrate and is filled in the hollowed region.

Abstract: Provides are a display panel, a display module, and a display device. The display panel includes an opening region, a barrier region surrounding the opening region, a display region surrounding the barrier region, a base substrate, a crack blocking structure surrounding the opening region; a barrier wall surrounding the crack blocking structure. The barrier wall and the crack blocking structure include a first metal layer and a first organic layer, an edge of side of the first metal layer away from the base substrate is indented relative to an edge of side of the first organic layer proximal to the base substrate. The barrier wall and the crack blocking structure includes a deep groove penetrating through a film layer between the first organic layer and the base substrate, the deep groove surrounds the opening region. The first organic layer fills the deep groove and is connected to the base substrate.

Abstract: The present disclosure provides a display substrate, a display device, and a manufacturing method of a display substrate. The display substrate of the present disclosure includes a substrate, a pixel defining layer located on the substrate, and a plurality of organic light emitting diodes arranged in an array, with a plurality of pixel accommodating holes provided in the pixel defining layer, and the organic light emitting diodes in one-to-one correspondence with the pixel accommodating holes, and located in the corresponding pixel accommodating holes; and a plurality of supporting structures in one-to-one correspondence with the pixel accommodating holes are formed on a side of the pixel defining layer distal to the substrate, and orthographic projections of the supporting structures on the pixel defining layer surround the corresponding pixel accommodating holes.

Abstract: The present disclosure provides a display substrate, a display device, and a manufacturing method of a display substrate. The display substrate of the present disclosure includes a substrate, a pixel defining layer located on the substrate, and a plurality of organic light emitting diodes arranged in an array, with a plurality of pixel accommodating holes provided in the pixel defining layer, and the organic light emitting diodes in one-to-one correspondence with the pixel accommodating holes, and located in the corresponding pixel accommodating holes; and a plurality of supporting structures in one-to-one correspondence with the pixel accommodating holes are formed on a side of the pixel defining layer distal to the substrate, and orthographic projections of the supporting structures on the pixel defining layer surround the corresponding pixel accommodating holes.

Abstract: A creatine kinase isoenzyme latex-enhanced immunoturbidimetric assay kit, comprising a first reagent and a second reagent. The first reagent comprises a buffer solution, an electrolyte, polyethylene glycol, a surfactant, a preservative, a blocking agent, and a protective agent. The second reagent comprises a buffer solution, polystyrene latex particles coated with a creatine kinase isoenzyme antibody, the creatine kinase isoenzyme antibody on the latex particles, a protective agent, a stabilizer, and a preservative.

Abstract: Embodiments of the invention provide an oxide TFT and a manufacturing method thereof. The oxide thin film transistor comprises: a substrate; a gate electrode formed on the substrate; a gate insulation layer covering the gate electrode; an oxide active layer formed on the gate insulation layer and comprising a source region, a drain region, and a channel between the source region and the drain region; an etching barrier layer entirely covering the active layer and the gate insulation layer; and a source electrode and a drain electrode formed on the etching barrier layer and respectively provided on both sides of the channel. The etching barrier layer is a metal layer. The oxide thin film transistor further comprises a channel protective layer, which is a non-conductive oxidation layer converted from the metal layer by performing an oxidation treatment on the metal layer.

Abstract: Embodiments of the invention provide an oxide TFT and a manufacturing method thereof. The oxide thin film transistor comprises: a substrate; a gate electrode formed on the substrate; a gate insulation layer covering the gate electrode; an oxide active layer formed on the gate insulation layer and comprising a source region, a drain region, and a channel between the source region and the drain region; an etching barrier layer entirely covering the active layer and the gate insulation layer; and a source electrode and a drain electrode formed on the etching barrier layer and respectively provided on both sides of the channel. The etching barrier layer is a metal layer. The oxide thin film transistor further comprises a channel protective layer, which is a non-conductive oxidation layer converted from the metal layer by performing an oxidation treatment on the metal layer.