Patents by Inventor Zhengquan Zhang

Zhengquan Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a nitrogenated silicon oxide layer and MOS device having same
    Patent number: 7928020
    Abstract: A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides opposite the interface region. Nitrogen is introduced into the silicon oxide layer by applying a nitrogen plasma. After applying nitrogen plasma, the silicon oxide layer is annealed. The processes of introducing nitrogen into the silicon oxide layer and annealing the silicon oxide layer are repeated to create a bi-modal nitrogen concentration profile in the silicon oxide layer. In the silicon oxide layer, the peak nitrogen concentrations are situated away from the interface region and at least one of the peak nitrogen concentrations is situated in proximity to the surface region. A method for fabricating a semiconductor device is incorporating the nitrogen-containing silicon oxide layers also disclosed.
    Type: Grant
    Filed: September 27, 2007
    Date of Patent: April 19, 2011
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Jinping Liu, Ben Ong, Zhengquan Zhang, Jae Gon Lee, Lydia Wong, Bin Yang, K. H. Alex See, Meisheng Zhou, Liang Choo Hsia
  • METHOD OF FABRICATING A NITROGENATED SILICON OXIDE LAYER AND MOS DEVICE HAVING SAME
    Publication number: 20090088002
    Abstract: A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides opposite the interface region. Nitrogen is introduced into the silicon oxide layer by applying a nitrogen plasma. After applying nitrogen plasma, the silicon oxide layer is annealed. The processes of introducing nitrogen into the silicon oxide layer and annealing the silicon oxide layer are repeated to create a bi-modal nitrogen concentration profile in the silicon oxide layer. In the silicon oxide layer, the peak nitrogen concentrations are situated away from the interface region and at least one of the peak nitrogen concentrations is situated in proximity to the surface region. A method for fabricating a semiconductor device is incorporating the nitrogen-containing silicon oxide layers also disclosed.
    Type: Application
    Filed: September 27, 2007
    Publication date: April 2, 2009
    Inventors: Jinping Liu, Ben Ong, Zhengquan Zhang, Jae Gon Lee, Lydia Wong, Bin Yang, K. H. See, Meisheng Zhou, Liang Choo Hsia