Abstract: Embodiments of the present disclosure provide method and apparatus for determining channel parameter. The determined channel parameter may be used for adaptive subband precoding. A method performed by a network device comprises determining at least one channel parameter for a subband related to a terminal device. The at least one channel parameter for the subband is calculated based on at least one channel parameter for a larger frequency band comprising the subband.

Abstract: A data retransmission method is provided herein. The method includes sending a data frame to an electronic device and receiving an acknowledgement frame from the electronic device within a transmission opportunity duration, where the acknowledgement frame includes first acknowledgement information; and when the first acknowledgement information indicates that at least a part of data in the data frame needs to be retransmitted and further indicates a retransmission period required to complete the retransmission, retransmitting information related to the at least the part of the data to the electronic device in the retransmission period.

Abstract: An etching method for selectively etching a silicon oxide film on a wafer surface that includes the silicon oxide film and a silicon nitride film includes: a surface layer removal process including: etching the silicon oxide film at a first etching rate and removing a surface modification layer covering on the silicon nitride film; and an etching process including: etching the silicon oxide film at a second etching rate. The first etching rate is smaller than the second etching rate.

Abstract: A carrier device in semiconductor processing equipment includes a base and an edge ring. The base includes a base body configured to carry a wafer and has an outer diameter smaller than a diameter of the wafer. The edge ring surrounds the base and has an outer diameter greater than the diameter of the wafer. An outer circumferential surface of the base body faces and is spaced from an inner circumferential surface of the edge ring to form a first annular channel. The first annular channel communicates with a gas supply system. When the base body carries the wafer, an upper surface of the edge ring faces and is spaced from a lower surface of the wafer to form a second annular channel. The first annular channel communicates with the second annular channel.

Abstract: Various embodiments of the present disclosure provide a method for multi-user multi-antenna transmission. The method which may be performed by a network node comprises calculating parameters for multi-user multi-antenna transmission, according to measurement information reported by a first set of terminal devices. The method further comprises selecting, from the first set of terminal devices, a second set of terminal devices to which the multi-user multi-antenna transmission is to be applied, based at least in part on performance gain estimated according to the parameters for multi-user multi-antenna transmission.

Abstract: Embodiments of the present disclosure provide a reaction gas supply system and a control method. The reaction gas supply system includes a plurality of precursor containers and a plurality of supply regulator devices. The precursor container is connected to at least one of the reaction chambers. The plurality of precursor containers include at least a pair of precursor containers of an arbitrary combination. A supply regulator device is arranged between each pair of precursor containers. The supply regulator device is configured to connect the corresponding pair of precursor containers. With the reaction gas supply system and the control method of the present disclosure, the reaction gas may be ensured to be supplied stably, the utilization rate of the precursor may be increased, and the production efficiency and the product quality may be increased.

Abstract: Various embodiments of the present disclosure provide a method for multi-user multi-antenna transmission. The method which may be performed by a network node comprises calculating parameters for multi-user multi-antenna transmission, according to measurement information reported by a first set of terminal devices. The method further comprises selecting, from the first set of terminal devices, a second set of terminal devices to which the multi-user multi-antenna transmission is to be applied, based at least in part on performance gain estimated according to the parameters for multi-user multi-antenna transmission.

Abstract: The embodiments of the present disclosure provide an etching method, an air-gap dielectric layer, and a dynamic random-access memory. The etching method is configured to selectively etch a silicon oxide film on a wafer surface that includes the silicon oxide film and a silicon nitride film. In addition, the etching method includes: a surface layer removal process including: etching the silicon oxide film at a first etching rate and removing a surface modification layer covering on the silicon nitride film; and an etching process including: etching the silicon oxide film at a second etching rate. The first etching rate is smaller than the second etching rate. In the etching method according to the present disclosure, through selectively etching the silicon oxide film, a substantial degradation of an etching selectivity ratio of SiO2/SiN caused by the surface modification layer on the wafer surface can be avoided.

Abstract: Embodiments of the present disclosure provide a reaction gas supply system and a control method. The reaction gas supply system includes a plurality of precursor containers and a plurality of supply regulator devices. The precursor container is connected to at least one of the reaction chambers. The plurality of precursor containers include at least a pair of precursor containers of an arbitrary combination. A supply regulator device is arranged between each pair of precursor containers. The supply regulator device is configured to connect the corresponding pair of precursor containers. With the reaction gas supply system and the control method of the present disclosure, the reaction gas may be ensured to be supplied stably, the utilization rate of the precursor may be increased, and the production efficiency and the product quality may be increased.

Abstract: Gas phase etching device and gas phase etching apparatus are provided. The gas phase etching device includes: a reaction chamber body, defining a space as a reaction chamber; a pedestal, disposed inside the reaction chamber for holding a workpiece; an inlet member, connected to the reaction chamber body for introducing etchants into the reaction chamber; a pressure regulating assembly, connected to the reaction chamber body for regulating a pressure inside the reaction chamber; a first temperature controller, connected to the reaction chamber body for controlling a temperature therein to a first temperature; and a second temperature controller, connected to the pedestal for controlling a temperature to a second temperature. The first temperature is a temperature that prevents the reaction chamber from being corroded by the etchants. The second temperature is a temperature under which the workpiece held by the pedestal satisfies a temperature requirement for directly performing a subsequent process.

Abstract: A semiconductor manufacturing process is provided. A trench is formed in a semiconductor structure and an oxide layer is deposited on sidewalls of the trench. A solid-state by-product layer is formed on surfaces of the trench by introducing a first etchant gas to react with a naturally occurred oxide layer at the bottom of the trench and the deposited oxide layer. The solid-state by-product layer has a thickness on the bottom less than a thickness on the sidewalls. A second etchant gas is introduced into the trench to react with the solid-state by-product layer, thereby providing a thinned solid-state by-product layer on the sidewalls to protect the deposited oxide layer. By a heating process, the thinned solid-state by-product layer is removed from the sidewalls of the trench, exposing the deposited oxide layer and a surface portion of the semiconductor structure in the trench.

Abstract: A method for removing silicon oxide from a wafer and an integrated circuit manufacturing process are provided. The method includes: introducing a dehydrated hydrogen fluoride gas and a dehydrated alcohol gas into a process chamber; mixing the dehydrated hydrogen fluoride gas with the dehydrated alcohol gas to generate gaseous etchants; allowing reactions between the etchants and the wafer in the process chamber under a high pressure maintained in the process chamber to improve an etching selectivity; and pumping out reaction products from the process chamber.

Abstract: A semiconductor manufacturing process is provided. A trench is formed in a semiconductor structure and an oxide layer is deposited on sidewalls of the trench. A solid-state by-product layer is formed on surfaces of the trench by introducing a first etchant gas to react with a naturally occurred oxide layer at the bottom of the trench and the deposited oxide layer. The solid-state by-product layer has a thickness on the bottom less than a thickness on the sidewalls. A second etchant gas is introduced into the trench to react with the solid-state by-product layer, thereby providing a thinned solid-state by-product layer on the sidewalls to protect the deposited oxide layer. By a heating process, the thinned solid-state by-product layer is removed from the sidewalls of the trench, exposing the deposited oxide layer and a surface portion of the semiconductor structure in the trench.

Abstract: A paging decoding method in a wireless communication device adapted to operate in association with a primary cell provided by a network node of a cellular communication system, wherein the primary cell has one or more neighboring cells is disclosed. The method comprises receiving a paging signal during a paging occasion, temporarily storing the received paging signal, attempting to decode the received paging signal based on one or more parameters of the primary cell, and (if decoding of the received paging signal based on one or more parameters of the primary cell is un-successful) attempting to decode the temporarily stored received paging signal based on parameters of one of the neighboring cells. In some embodiments, the method may further comprise selecting the one of the neighboring cells based on one or more of respective received signal strengths of the neighboring cells and respective received signal powers of the neighboring cells after receiving the paging signal during the paging occasion.

Abstract: A method for removing silicon oxide from a wafer and an integrated circuit manufacturing process are provided. The method includes: introducing a dehydrated hydrogen fluoride gas and a dehydrated alcohol gas into a process chamber; mixing the dehydrated hydrogen fluoride gas with the dehydrated alcohol gas to generate gaseous etchants; allowing reactions between the etchants and the wafer in the process chamber under a high pressure maintained in the process chamber to improve an etching selectivity; and pumping out reaction products from the process chamber.

Abstract: Gas phase etching device and gas phase etching apparatus are provided. The gas phase etching device includes: a reaction chamber body, defining a space as a reaction chamber; a pedestal, disposed inside the reaction chamber for holding a workpiece; an inlet member, connected to the reaction chamber body for introducing etchants into the reaction chamber; a pressure regulating assembly, connected to the reaction chamber body for regulating a pressure inside the reaction chamber; a first temperature controller, connected to the reaction chamber body for controlling a temperature therein to a first temperature; and a second temperature controller, connected to the pedestal for controlling a temperature to a second temperature. The first temperature is a temperature that prevents the reaction chamber from being corroded by the etchants. The second temperature is a temperature under which the workpiece held by the pedestal satisfies a temperature requirement for directly performing a subsequent process.

Abstract: A paging decoding method in a wireless communication device adapted to operate in association with a primary cell provided by a network node of a cellular communication system, wherein the primary cell has one or more neighboring cells is disclosed. The method comprises receiving a paging signal during a paging occasion, temporarily storing the received paging signal, attempting to decode the received paging signal based on one or more parameters of the primary cell, and (if decoding of the received paging signal based on one or more parameters of the primary cell is un-successful) attempting to decode the temporarily stored received paging signal based on parameters of one of the neighboring cells. In some embodiments, the method may further comprise selecting the one of the neighboring cells based on one or more of respective received signal strengths of the neighboring cells and respective received signal powers of the neighboring cells after receiving the paging signal during the paging occasion.

Abstract: The present invention provides a method and an apparatus for eliminating direct current offset.

Abstract: The present invention provides a method and an apparatus for eliminating direct current offset.

Abstract: Taught is a method of removal surface contaminants, including organic contaminants, metal ions and solid particles, from silicon wafer surface comprising the following steps: (a) submerging the silicon wafer surface in an aqueous cleaning agent solution through which current is passed using a boron-doped diamond film as an electrode; (b) submerging the silicon wafer surface in an aqueous cleaning agent solution; subjecting the silicon wafer to ultrasound waves; and, optionally, heating the solution; (c) submerging the silicon wafer surface in water through which current is passed using a boron-doped diamond film as an electrode; (d) submerging the silicon wafer surface in water with ultrasound and heating; (e) repeating step (d); and (f) spraying the silicon surface with water. The results obtained using the method according to this invention are far superior to those obtained with conventional methods. The technology is simple, convenient to operate, and environmentally friendly.