Abstract: A double pinned magnetoresistance (MR) multilayer film, a full bridge MR sensor using the double pinned MR multilayer film and a method for manufacturing the full bridge MR sensor are provided in the present invention. The double pinned MR multilayer film comprises: a buffer layer, a first antiferromagnetic layer, a first ferromagnetic layer, a first interlayer, a ferromagnetic reference layer, a spacer layer, a ferromagnetic free layer, a second interlayer, a second ferromagnetic layer, a second antiferromagnetic layer and a cover layer that are stacked in sequence. The first antiferromagnetic layer applies a first exchange bias to the first ferromagnetic layer, and the first ferromagnetic layer applies a first artificial antiferromagnetic coupling to the ferromagnetic reference layer through the first interlayer.

Abstract: A double pinned magnetoresistance (MR) multilayer film, a full bridge MR sensor using the double pinned MR multilayer film and a method for manufacturing the full bridge MR sensor are provided in the present invention. The double pinned MR multilayer film comprises: a buffer layer, a first antiferromagnetic layer, a first ferromagnetic layer, a first interlayer, a ferromagnetic reference layer, a spacer layer, a ferromagnetic free layer, a second interlayer, a second ferromagnetic layer, a second antiferromagnetic layer and a cover layer that are stacked in sequence. The first antiferromagnetic layer applies a first exchange bias to the first ferromagnetic layer, and the first ferromagnetic layer applies a first artificial antiferromagnetic coupling to the ferromagnetic reference layer through the first interlayer.

Abstract: A method involves a first magnetic sensor of a magnetic apparatus measuring an external magnetic field. The method also involves a signal processing circuit of the apparatus performing calibration using a second sensor in response to the external magnetic field. The first sensor and the second sensor are formed on the same substrate. There will be at least one magnetic sensor is used to measure the external magnetic field, and the other magnetic sensor is used in calibration, and therefore, the method ensures an effective output signal can be generated during calibration and enhances the accuracy of the measurement.

Abstract: The present disclosure provides an anisotropic magnetoresistance (AMR) sensor. The AMR sensor comprises: a substrate layer; a buffer layer disposed on the substrate layer; a cap layer disposed on the buffer layer; and an intermediate layer disposed between the buffer layer and the cap layer and comprising a ferromagnetic layer and an antiferromagnetic layer. A magnetic moment of the ferromagnetic layer is oriented randomly after the ferromagnetic layer is interfered by an external large magnetic field. The magnetic moment of the ferromagnetic layer can be rearranged by an exchange bias between the antiferromagnetic layer and the ferromagnetic layer, such that the magnetic moment of the ferromagnetic layer is oriented uniformly after the ferromagnetic layer is interfered by a large magnetic field, thereby setting a direction of the magnetic moment of the ferromagnetic layer (SET function). A push-pull full bridge circuit based on the above anisotropic magnetoresistance sensor is also provided.