Abstract: A method for evaluating the foamability of a test solution. The method includes forming foam in a vertical measurement column including an open top end and a fritted plate proximal to a bottom end by passing a gas stream through the fitted plate and through the test solution present in the vertical measurement column at a gas volume rate (GVR) and a gas flow rate (GFR). The foam travels upwards in the vertical measurement column while the gas stream is passing through the test solution. The method further includes measuring the viscosity of the foam with a vibration viscometer disposed proximal to the top end of the vertical measurement column, and further recording a plurality of vibration viscometer measurement results and storing the results (a surfactant amount Csurf, the GVR, and the GFR) in memory to determine one or more foam properties of the test solution.

Abstract: Embodiments of the present disclosure relate to visible luminescent phosphors, visible luminescent nanobelt phosphors, methods of making visible luminescent phosphors, methods of making visible luminescent nanobelt phosphors, mixtures of visible luminescent phosphors, methods of using visible luminescent phosphors, waveguides including visible luminescent phosphors, white light emitting phosphors, and the like.

Abstract: Phosphors based on doping of an activator (an emitter) into a host matrix are disclosed herein. Such phosphors include alkaline gallate phosphors doped with Cr3+ or Ni2+ ions, which in some embodiments can exhibit persistent infrared phosphorescence for as long as 200 hours. Such phosphors can be used, for example, as components of a luminescent paint.

Abstract: Phosphors based on transition metal-activated gallates, particularly Cr3+- and Ni2+-activated zinc germanium gallates, are disclosed herein. In some embodiments such phosphors can exhibit persistent infrared phosphorescence for as long as 400 hours. Such phosphors can be used, for example, as components of a luminescent paint.

Abstract: Phosphors based on doping of an activator (an emitter) into a host matrix are disclosed herein. Such phosphors include alkaline gallate phosphors doped with Cr3+ or Ni2+ ions, which in some embodiments can exhibit persistent infrared phosphorescence for as long as 200 hours. Such phosphors can be used, for example, as components of a luminescent paint.

Abstract: Embodiments of the present disclosure relate to visible luminescent phosphors, visible luminescent nanobelt phosphors, methods of making visible luminescent phosphors, methods of making visible luminescent nanobelt phosphors, mixtures of visible luminescent phosphors, methods of using visible luminescent phosphors, waveguides including visible luminescent phosphors, white light emitting phosphors, and the like.

Abstract: Phosphors based on doping of an activator (an emitter) into a host matrix are disclosed herein. Such phosphors include alkaline gallate phosphors doped with Cr3+ or Ni2+ ions, which in some embodiments can exhibit persistent infrared phosphorescence for as long as 200 hours. Such phosphors can be used, for example, as components of a luminescent paint.

Abstract: Phosphors based on transition metal-activated gallates, particularly Cr3+- and Ni2+-activated zinc germanium gallates, are disclosed herein. In some embodiments such phosphors can exhibit persistent infrared phosphorescence for as long as 400 hours. Such phosphors can be used, for example, as components of a luminescent paint.

Abstract: Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.

Abstract: Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.

Abstract: Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.

Abstract: Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.