Abstract: A preparation method of a heterojunction solar cell includes following steps: depositing a first passivation layer on a first surface of a silicon substrate by using a gas source, a base material of the first passivation layer being hydrogenated amorphous silicon; during depositing hydrogenated amorphous silicon of the first passivation layer, allowing the gas source to gradually incorporate carbon dioxide, and controlling a proportion of carbon dioxide in the gas source to gradually increase with increase of a thickness of the first passivation layer which has been deposited.

Abstract: A solar cell is provided, includes: a substrate, a first passivation layer, an emission layer, a first conductive layer, a second passivation layer, a back surface field layer and a second conductive layer. The first passivation layer, the emission layer and the first conductive layer are sequentially disposed on a surface of one side of the substrate, and the second passivation layer, the back surface field layer and the second conductive layer are sequentially disposed on a surface of another side of the substrate. The first conductive layer includes a first transparent conductive oxide layer, a first conductive metal layer and a second transparent conductive oxide layer which are sequentially stacked.

Abstract: The present application provides a transparent conductive oxide film and a heterojunction solar cell, which relates to the technical field of solar cells. The transparent conductive oxide film includes a seed layer, a conductive layer and a protection layer. The seed layer includes an indium tin oxide film or a gallium/aluminum co-doped zinc oxide film. The conductive layer is a gallium/aluminum co-doped zinc oxide film. The protection layer is an indium tin oxide film. The thickness of the indium tin oxide film in the transparent conductive oxide film is smaller than the thickness of the gallium/aluminum co-doped zinc oxide film. It can ensure battery efficiency and reduce battery attenuation, while reducing costs.

Abstract: A crystalline silicon solar cell and a metallization method therefor, which belong to the field of solar cells. The crystalline silicon solar cell comprises a photovoltaic structure, and passivation mechanisms, which are respectively formed on the front face and back face of the photovoltaic structure, wherein the front face is also provided with a front-face electrode, which is electroplated by using a conductive layer that is formed by means of chemical plating, the back face is also provided with a back-face electrode, which is electroplated by using another conductive layer that is formed by means of chemical plating, and a heavily doped area is formed in a region of the back face that corresponds to the back-face electrode. The cell has low manufacturing costs, high conversion efficiency and high reliability.

Abstract: An optical sensor that can receive light ranging from visible light to infrared light is provided. A thin beta-iron disilicide semiconductor film is formed on a silicon substrate. Light in the visible region is received by silicon, and light in the infrared region is received by beta-iron disilicide.

Abstract: In the air or in an inert gas atmosphere, powder raw materials are deposited on a flexible sheet for forming a film, an electrode, and a protective film under pressing a heating roller, and a device can be manufactured by continuous operations in which all the steps are integrated. There is provided a cheap device, by which the manhours for manufacturing a device is reduced, the throughput is improved in comparison with those of a previous device by which a film, an electrode, and a protective film have been manufactured on a crystal substrate in a vacuum.

Abstract: In the air or in an inert gas atmosphere, powder raw materials are deposited on a flexible sheet for forming a film, an electrode, and a protective film under pressing a heating roller, and a device can be manufactured by continuous operations in which all the steps are integrated. There is provided a cheap device, by which the manhours for manufacturing a device is reduced, the throughput is improved in comparison with those of a previous device by which a film, an electrode, and a protective film have been manufactured on a crystal substrate in a vacuum.

Abstract: An optical sensor that can receive light ranging from visible light to infrared light is provided. A thin beta-iron disilicide semiconductor film is formed on a silicon substrate. Light in the visible region is received by silicon, and light in the infrared region is received by beta-iron disilicide.