Abstract: The present invention relates to a process for producing polysilicon wafer and a dual temperature field chemical vapor deposition apparatus for implementing the process. The process for producing polysilicon wafer is based on the formation of the polysilicon wafer through the reaction of trichlorosilane with hydrogen on the substrate. The dual temperature field chemical vapor deposition apparatus includes a reactor and a substrate, wherein the reactor has a closed space defined by a gas-feeding unit, a reaction heating furnace, a substrate heating furnace, and a substrate housing box, the gas-feeding unit is positioned on the reaction heating furnace and is contact with a water-cooling unit at the outer wall of the reaction heating furnace, the substrate heating furnace is positioned under the reaction heating furnace, the substrate moves along the gap between the reaction heating furnace and the substrate heating furnace.