Patents by Inventor Zhengyu Guo

Zhengyu Guo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integration of an Optical Height Sensor in Mask Inspection Tools
    Publication number: 20220196572
    Abstract: A photomask-inspection system includes a vacuum chamber and a stage, disposed in the vacuum chamber, to support a photomask and to translate the photomask horizontally and vertically. The system also includes an EUV objective, disposed in the vacuum chamber, to collect EUV light from the photomask to inspect the photomask for defects and an optical height sensor, at least partially disposed in the vacuum chamber, to measure heights on a surface of the photomask. The system further includes a stage controller to translate the stage horizontally and vertically in accordance with a focal map for the photomask produced using the measured heights on the surface of the photomask.
    Type: Application
    Filed: June 21, 2021
    Publication date: June 23, 2022
    Inventors: Zefram Marks, Dmitry Skvortsov, Zhengyu Guo, Zhengcheng Lin, Nicolas Steven Juliano, Rui-Fang Shi
  • Black silicon based metal-semiconductor-metal photodetector
    Patent number: 8384179
    Abstract: A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.
    Type: Grant
    Filed: July 13, 2010
    Date of Patent: February 26, 2013
    Assignee: University of Electronic Science and Technology of China
    Inventors: Yadong Jiang, Jing Jiang, Anyuan Zhang, Zhengyu Guo, Guodong Zhao, Zhiming Wu, Wei Li
  • Black silicon based metal-semiconductor-metal photodetector
    Publication number: 20120012967
    Abstract: A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.
    Type: Application
    Filed: July 13, 2010
    Publication date: January 19, 2012
    Inventors: Yadong Jiang, Guodong Zhao, Zhiming Wu, Wei Li, Jing Jiang, Anyuan Zhang, Zhengyu Guo