Abstract: A trench-gate power MOSFET with optimized layout, comprising: a substrate; a first semiconductor region formed on the substrate, having a first doping type; mutually separated trench isolation gate structure, formed on the first semiconductor region, the trench isolation gate structure includes an gate oxide layer and a gate electrode; a second semiconductor region and a third semiconductor region formed between any two adjacent structures of mutually separated trench isolation gate structures; and a first shielding region, formed under each of the third semiconductor regions, connecting simultaneously with multiple mutually separated trench isolation structures.

Abstract: A trench-gate power MOSFET with optimized layout, comprising: a substrate; a first semiconductor region formed on the substrate, having a first doping type; mutually separated trench isolation gate structure, formed on the first semiconductor region, the trench isolation gate structure includes an gate oxide layer and a gate electrode; a second semiconductor region and a third semiconductor region formed between any two adjacent structures of mutually separated trench isolation gate structures; and a first shielding region, formed under each of the third semiconductor regions, connecting simultaneously with multiple mutually separated trench isolation structures.

Abstract: A silicon carbide power MOSFET with enhanced body diode applying a repetitive polygonal or circular layout design on a first surface, having: a substrate; an N-type SiC region with a first doping concentration formed on the substrate; a JFET region or a trench insulating gate region formed inside the N-type SiC region; a metal layer formed on the N-type SiC region; a P-type SiC region with a second doping concentration or a Schottky region, wherein the P-type SiC region is formed on one side of the JFET region or one side of the trench insulating gate region, the P-type SiC region and the metal layer are contacted directly forming an ohmic contact, the Schottky region and the metal layer are contacted directly forming a Schottky contact; and a conventional source region on another side of the JFET region.