Abstract: A configuration control circuit of a flash-type FPGA capable of suppressing programming interference is provided. The configuration control circuit adds a programming selection circuit compared with a conventional configuration control circuit. When a programming operation is performed on a flash memory cell located in a target row and a target column, the programming selection circuit controls a path between a programming bit line (BL) voltage and a BL voltage obtaining terminal of the flash memory cell located in the target row and the target column to be turned on, and a path between the programming BL voltage and a BL voltage obtaining terminal of a flash memory cell located in another row and the target column to be turned off.

Abstract: A chip state monitoring circuit based on a self-balancing differential signal integration and amplification circuit is provided. The chip state monitoring circuit is built in a chip, and can sense a state signal of the chip and transmit the state signal to a chip configuration circuit after performing amplification and analog-to-digital conversion, such that the chip configuration circuit can monitor a state and provide a timely feedback or response, thereby improving reliability and a service life of the chip. The chip state monitoring circuit uses a brand new self-balancing differential signal integration and amplification circuit. With a built-in positive coefficient integration network and negative coefficient balancing network, the self-balancing differential signal integration and amplification circuit can perform amplification by required times to enter a self-balancing stable state, thereby achieving fixed-multiple amplification without timed reading. The control method is simple and flexible.

Abstract: In an anti-fuse memory reading circuit with controllable reading time, a reading time control circuit generates a control signal corresponding to reading time. Based on a clock signal, a programmable reading pulse generation circuit generates a reading pulse with a pulse width corresponding to the control signal. Based on the reading pulse and the control signal, the reading amplification circuit selects a pull-up current source corresponding to the reading time, pulls up a voltage on a bit line (BL) of an anti-fuse memory cell, reads data stored in the anti-fuse memory cell starting from a rising edge of the reading pulse, and latches the read data at a falling edge of the reading pulse. The anti-fuse memory reading circuit can generate a reading pulse with a corresponding pulse width and a pull-up current source with a corresponding size based on the required reading time.

Abstract: A configuration circuit of a flash FPGA for realizing external monitoring and configuration is provided. In the configuration circuit, a positive high-voltage output terminal of a positive high-voltage charge pump is connected to a positive high-voltage external monitoring port through a positive high-voltage bidirectional switch circuit, and the positive high-voltage output terminal of a positive high-voltage charge pump is further configured as a positive output end of a voltage supply circuit. A negative high-voltage output terminal of a negative high-voltage charge pump is connected to a negative high-voltage external monitoring port through a negative high-voltage bidirectional switch circuit, and the negative high-voltage output terminal of a negative high-voltage charge pump is further configured as a negative output end of the voltage supply circuit. Based on a received mode adjustment signal, a mode control circuit controls to enter an external monitoring mode or an external configuration mode.

Abstract: A logic process-based level conversion circuit of a flash flash field programmable gate array (FPGA) performs three-stage level conversion by using three conversion modules. A first-stage conversion module is configured to convert an input first signal of a VDD-GND voltage domain into a second signal of a VP1-GND voltage domain, an intermediate-stage conversion module is configured to convert the input second signal of the VP1-GND voltage domain into a third signal of a VP1-VN voltage domain, and a drive-stage conversion module is configured to convert the input third signal of the VP1-VN voltage domain into a drive signal of a VP2-VN voltage domain and output a drive word line. The logic process-based level conversion circuit reduces the pressure of conversion at each stage, ensures a capability of driving the next stage, increases the conversion speed, and provides a large driving capability at the last stage.

Abstract: In an anti-fuse programming control circuit based on a master-slave charge pump structure, a master charge pump module obtains an external voltage and is connected to a plurality of slave charge pump modules. Each slave charge pump module is connected to an anti-fuse bank. The distance between the layout position of each slave charge pump module and the layout position of the connected anti-fuse bank does not exceed a predetermined distance. Based on a programming voltage output by each slave charge pump module to the connected anti-fuse bank, the feedback network outputs a feedback signal corresponding to the slave charge pump module to the master charge pump module. Based on the feedback signal corresponding to each slave charge pump module, the master charge pump module adjusts a master drive signal provided to the slave charge pump module to stabilize the programming voltage output by the slave charge pump module.