Patents by Inventor Zhenkun YIN

Zhenkun YIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10305300
    Abstract: The present disclosure provides a self-activation circuit, where the self-activation circuit comprises an N-type metal oxide semiconductor (MOS) transistor Q4, a PNP-type transistor Q2, resistors R20, R21, R24, R25, and a capacitor C2. A first end of the resistor R25 is connected with a detection pin (CS) of the battery protection chip, and a drain electrode of the N-type MOS transistor Q4 is connected with a second end of the resistor R25. A source electrode of the N-type MOS transistor Q4 is connected with a ground end of the storage battery, and a gate electrode of the N-type MOS transistor Q4 is connected with the ground end of the storage battery by the resistor R20.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: May 28, 2019
    Assignee: SOCREAT ELECTRONICS TECHNOLOGY LIMITED
    Inventors: Zhenkun Yin, Baichuan Xiang, Xingqing Wang
  • Publication number: 20190140462
    Abstract: Provided is a power supply device and a lighting system. The power supply device includes a solar panel, a storage battery, a charging management circuitry, a control circuitry, and a voltage-stabilized circuitry. The positive electrode of the solar panel, an input terminal of the charging management circuitry, and a first input terminal of the voltage-stabilized circuitry are interconnected. An output terminal of the charging management circuitry, the positive electrode of the storage battery, and a second input terminal of the voltage-stabilized circuitry are interconnected. An output terminal of the voltage-stabilized circuitry is connected to a power supply terminal of the control circuitry. A first control terminal of the control circuitry is connected to a controlled terminal of the charging management circuitry.
    Type: Application
    Filed: January 12, 2018
    Publication date: May 9, 2019
    Inventors: Zhenkun YIN, Baichuan XIANG, Junwu BAI, Zhiwei LI, Jie XIONG
  • Publication number: 20180115173
    Abstract: The present disclosure provides a self-activation circuit, where the self-activation circuit comprises an N-type metal oxide semiconductor (MOS) transistor Q4, a PNP-type transistor Q2, resistors R20, R21, R24, R25, and a capacitor C2. A first end of the resistor R25 is connected with a detection pin (CS) of the battery protection chip, and a drain electrode of the N-type MOS transistor Q4 is connected with a second end of the resistor R25. A source electrode of the N-type MOS transistor Q4 is connected with a ground end of the storage battery, and a gate electrode of the N-type MOS transistor Q4 is connected with the ground end of the storage battery by the resistor R20.
    Type: Application
    Filed: March 10, 2017
    Publication date: April 26, 2018
    Inventors: Zhenkun YIN, Baichuan XIANG, Xingqing WANG