Patents by Inventor Zhenlei E. Shen

Zhenlei E. Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Adjustment of a pre-read operation based on an operating temperature
    Patent number: 11256429
    Abstract: First data can be received at a memory sub-system. An operating temperature of the memory sub-system can be identified. An adjusted read voltage level can be determined in response to the operating temperature satisfying a threshold criterion pertaining to a threshold temperature. A read operation can be performed at the memory sub-system based on the adjusted read voltage level to retrieve second data. The first data can be stored at the memory sub-system based on the second data that was retrieved from the read operation that is based on the adjusted read voltage level.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: February 22, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Zhenlei E. Shen, Zhengang Chen, Tingjun Xie, Jiangli Zhu
  • ADJUSTMENT OF A PRE-READ OPERATION BASED ON AN OPERATING TEMPERATURE
    Publication number: 20200363969
    Abstract: First data can be received at a memory sub-system. An operating temperature of the memory sub-system can be identified. An adjusted read voltage level can be determined in response to the operating temperature satisfying a threshold criterion pertaining to a threshold temperature. A read operation can be performed at the memory sub-system based on the adjusted read voltage level to retrieve second data. The first data can be stored at the memory sub-system based on the second data that was retrieved from the read operation that is based on the adjusted read voltage level.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 19, 2020
    Inventors: Zhenlei E. Shen, Zhengang Chen, Tingjun Xie, Jiangli Zhu
  • Adjustment of a pre-read operation associated with a write operation
    Patent number: 10761754
    Abstract: Data can be received at a memory sub-system. A characteristic of the memory sub-system can be identified. A read voltage level can be determined based on the characteristic of the memory sub-system. A read operation can be performed at the memory sub-system based on the read voltage level to retrieve stored data. The received data can be stored at the memory sub-system based on the stored data that was retrieved from the read operation that is based on the read voltage level.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: September 1, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Zhenlei E. Shen, Zhengang Chen, Tingjun Xie, Jiangli Zhu
  • ADJUSTMENT OF A PRE-READ OPERATION ASSOCIATED WITH A WRITE OPERATION
    Publication number: 20200050383
    Abstract: Data can be received at a memory sub-system. A characteristic of the memory sub-system can be identified. A read voltage level can be determined based on the characteristic of the memory sub-system. A read operation can be performed at the memory sub-system based on the read voltage level to retrieve stored data. The received data can be stored at the memory sub-system based on the stored data that was retrieved from the read operation that is based on the read voltage level.
    Type: Application
    Filed: August 7, 2018
    Publication date: February 13, 2020
    Inventors: Zhenlei E. Shen, Zhengang Chen, Tingjun Xie, Jiangli Zhu