Patents by Inventor Zhenping Wen

Zhenping Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH PRESSURE LOW THERMAL BUDGE HIGH-K POST ANNEALING PROCESS
    Publication number: 20180174848
    Abstract: A method of fabricating high-k/metal gate semiconductor device by incorporating an enhanced annealing process is provided. The enhanced annealing process in accordance with the disclosure can be operated at relatively low temperature and high pressure and thus can improve the k value and repair the above-mentioned deficiencies of the HK layer. Under the enhanced annealing process in accordance with the disclosure, H+ can be diffused from the ammonia gas and to repair the broken bonds because of high pressure, while avoiding adversely impact the NiSi and implanted ions in the HK layer due to the low temperature. The enhanced annealing process in accordance with the disclosure can be performed between 300° C. to 500° C. at a pressure of 15-20 atm for 15 to 50 minutes in some embodiments.
    Type: Application
    Filed: February 10, 2017
    Publication date: June 21, 2018
    Inventor: Zhenping Wen
  • High pressure low thermal budge high-k post annealing process
    Patent number: 10002766
    Abstract: A method of fabricating high-k/metal gate semiconductor device by incorporating an enhanced annealing process is provided. The enhanced annealing process in accordance with the disclosure can be operated at relatively low temperature and high pressure and thus can improve the k value and repair the above-mentioned deficiencies of the HK layer. Under the enhanced annealing process in accordance with the disclosure, H+ can be diffused from the ammonia gas and to repair the broken bonds because of high pressure, while avoiding adversely impact the NiSi and implanted ions in the HK layer due to the low temperature. The enhanced annealing process in accordance with the disclosure can be performed between 300° C. to 500° C. at a pressure of 15-20 atm for 15 to 50 minutes in some embodiments.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: June 19, 2018
    Assignee: SHANGHAI HUALI MICROELECTRONICS CORPORATION
    Inventor: Zhenping Wen