Patents by Inventor Zhenwei Ma

Zhenwei Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Material for making hyper frequency multi-layer chip inductors with high performance and low sintering temperature and a process for preparing the material
    Patent number: 6761839
    Abstract: A composition of material used for making hfMLCIs having a sintering temperature below 1000°. The composition comprises a major component and a minor component, said major component being a general formula: Ba3Co2-x-yZnxCuyMnxFe24-z-wO41, wherein x, z, w,=0-1.0 and y=0-0.8, and said minor component comprising at least one compound selected from the group of Bi2O3, V2O5,PbO,B2O3, Lif and CaF2. HfMLCIs made from the composition of the present invention are capable of functioning in the frequency region of 300-800 MHz.
    Type: Grant
    Filed: August 27, 2001
    Date of Patent: July 13, 2004
    Inventors: Xiaohui Wang, Longtu Li, Ji Zhou, Zhengxing Yue, Zhenwei Ma, Shuiyuan Su
  • Formula and preparation method for multi-layer chip inductor material used in very high frequencies
    Patent number: 6695972
    Abstract: This invention relates to the formula and preparation method for a multi-layer chip inductor material used in very high frequencies. The main composition of this material is planar hexagonal soft magnetic ferrite, and ingredient is low temperature sintering aid. Preparation method is a synthetic method of solid phase reaction. The sintering aid is prepared by secondary doping. By the process of ball grinding, drying, pre-calcining, ball grinding, drying, granulating, forming, sintering, and so forth, very high frequency inductor material of superior quality is obtained, realizing low temperature sintering under a temperature lower than 900° C. This invention is of low cost, high performance, suitable for multi-layer chip inductors at very high frequencies of 300M-800 MHz.
    Type: Grant
    Filed: January 14, 2002
    Date of Patent: February 24, 2004
    Assignees: Tsinghua Tongfang Co., Ltd., Tsinghua University
    Inventors: Xiaohui Wang, Longtu Li, Ji Zhou, Shuiyuan Su, Zhilun Gui, Zhenxing Yue, Zhenwei Ma, Li Zhang
  • Formula and preparation method for multi-layer chip inductor material used in very high frequencies
    Publication number: 20030052298
    Abstract: This invention relates to the formula and preparation method for a multi-layer chip inductor material used in very high frequencies. The main composition of this material is planar hexagonal soft magnetic ferrite, and ingredient is low temperature sintering aid. Preparation method is a synthetic method of solid phase reaction. The sintering aid is prepared by secondary doping. By the process of ball grinding, drying, pre-calcining, ball grinding, drying, granulating, forming, sintering, and so forth, very high frequency inductor material of superior quality is obtained, realizing low temperature sintering under a temperature lower than 900° C. This invention is of low cost, high performance, suitable for multi-layer chip inductors at very high frequencies of 300M-800 MHz.
    Type: Application
    Filed: January 14, 2002
    Publication date: March 20, 2003
    Applicant: Tsinghua Tongfang Co., Ltd.
    Inventors: Xiaohui Wang, Longtu Li, Ji Zhou, Shuiyuan Su, Zhilun Gui, Zhenxing Yue, Zhenwei Ma, Li Zhang
  • Material for making hyper frequency multi-layer chip inductors with high performance and low sintering temperature and a process for preparing the material
    Publication number: 20020108677
    Abstract: A composition of material used for making hfMLCIs having a sintering temperature below 1000°. The composition comprises a major component and a minor component, said major component being a general formula: Ba3Co2-x-yZnxCuyMnxFe24-z-wO41, wherein x, z, w,=0-1.0 and y=0-0.8, and said minor component comprising at least one compound selected from the group of Bi2O3, V2O5,PbO,B2O3, Lif and CaF2. HfMLCIs made from the composition of the present invention are capable of functioning in the frequency region of 300-800 MHz.
    Type: Application
    Filed: August 27, 2001
    Publication date: August 15, 2002
    Inventors: Xiaohui Wang, Longtu Li, Ji Zhou, Zhengxing Yue, Zhenwei Ma, Shuiyuan Su