Abstract: The embodiments of the present disclosure provide a crystal preparation device and a crystal preparation method. The crystal preparation device comprises a growth chamber configured to place a raw material; a heating component configured to heat the growth chamber; a pulling component configured for pulling growth; and a guide component in a transmission connection with the pulling component. The crystal preparation method comprises providing a raw material in the growth chamber; descending the pulling component bonded with a seed crystal to a vicinity of the raw material, the pulling component being in transmission connection with the guide component and at least a portion of the pulling component being located in the guide component; heating the growth chamber to form a raw material melt; and growing a crystal based on the seed crystal and the raw material melt through a transmission movement of the pulling component and the guide component.

Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

Abstract: The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.

Abstract: The present disclosure provides a device and method for growing a crystal. A crystal preparation device includes a growth chamber, a heating component, and a filter component. The heating component includes at least one heating unit. The at least one heating unit is located in the growth chamber. The at least one heating unit is an inverted cone structure. An angle between a side surface of the inverted cone structure and an upper surface of the inverted cone structure is within a range of 5°-45°. The filter component is located in the growth chamber. An inner sidewall of the filter component is connected with the at least one heating unit. A gas phase channel is formed between an outer sidewall of the filter component and an inner sidewall of the growth chamber.

Abstract: A crystal preparation apparatus (100) and a crystal preparation method (700). The crystal preparation apparatus (100) comprises: a growth cavity (110), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); and a heating assembly (120), used for heating the growth cavity (110). The crystal preparation method (700) comprises: placing a raw material in the growth cavity (110) (710), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); heating the growth cavity (110) by means of the heating assembly (120) so as to melt the raw material into a melt (720); bonding a seed crystal (180) to a seed crystal holder (150) (730); lowering the seed crystal holder (150) to which the seed crystal (180) is bonded, so that the seed crystal (180) is in contact with the melt; and preparing a crystal on the basis of the seed crystal (180) and the melt (750).

Abstract: The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.

Abstract: Embodiments of the present disclosure provide a sealing structure and a vacuum furnace. The sealing structure includes a baffle plate provided with a first through-hole, a first structural component provided with an internal hole for a component to be sealed to extend through, and a sealing assembly for sealing a gap between the baffle plate and the first structural component and a gap between the component to be sealed and the first structural component. The first through-hole extends through a first side surface and a second side surface of the baffle plate. The first structural component is connected to the baffle plate, at least a part of the internal hole is located within the first through-hole, and at least the part of the internal hole is not parallel to both the first side surface and the second side surface.

Abstract: Disclosed are a method and a device for preparing a crystal cladding. The method may include preparing an amorphous material; melting the amorphous material to form an amorphous melt; submerging an optical fiber core in the amorphous melt; forming an amorphous cladding around a periphery of the optical fiber core; and obtaining the crystal cladding by performing a crystallization process on the amorphous cladding. The device may include an amorphous material preparation component configured to prepare an amorphous material; an amorphous cladding preparation component configured to melt the amorphous material to form an amorphous melt, submerge an optical fiber core in the amorphous melt, and form an amorphous cladding around a periphery of the optical fiber core based on the amorphous melt and the optical fiber core; and a crystal cladding preparation assembly configured to perform a crystallization process on the amorphous cladding to obtain a crystal cladding.

Abstract: The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.

Abstract: The present disclosure provides a window device for a furnace. The window device may include a frame placed on a sidewall of the furnace; a window placed on the frame; an air inlet placed on the frame; and a plurality of air outlets. The plurality of air outlets may be connected to the air inlet and an interior of the furnace. Each of two of the plurality of air outlets may connect with an air venting pipeline. Tangential directions of two air venting pipelines connected with two air outlets among the plurality of air outlets may form an angle and the angle may be within an angle range.

Abstract: Disclosed are a method and a device for preparing a single-crystal cladding. The method may include preparing an amorphous material; melting the amorphous material to form an amorphous melt; submerging an optical fiber in the amorphous melt; forming an amorphous cladding around a periphery of the optical fiber; and obtaining the single-crystal cladding by performing a crystallization process on the amorphous cladding. The device may include an amorphous material preparation component configured to prepare an amorphous material; an amorphous cladding preparation component configured to melt the amorphous material to form an amorphous melt, submerge an optical fiber in the amorphous melt, and form an amorphous cladding around a periphery of the optical fiber based on the amorphous melt and the optical fiber; and a single-crystal cladding preparation assembly configured to perform a crystallization process on the amorphous cladding to obtain a single-crystal cladding.

Abstract: The present disclosure provides an apparatus for crystal growth. The apparatus may include a furnace chamber a temperature field device placed at least partially into the furnace chamber. The furnace chamber may be a non-closed structure, and the temperature field device may be sealed.

Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.

Abstract: The present disclosure provides a method for producing a composite crystal, the method is performed in a multi-chamber growth device, and the multi-chamber growth device includes a plurality of chambers. The method includes conveying and processing at least one substrate between a plurality of chambers and obtaining at least one composite crystal by growing a target crystal through vapor deposition in one of the plurality of chambers, the at least one composite crystal including the at least one substrate and the target crystal.

Abstract: The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.

Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a filler filled in a space between the first drum and the second drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.

Abstract: The method includes acquiring a user-input information, and calculating to obtain candidate words; performing probability predicting calculation to the candidate words, to obtain probability values of the candidate words; inputting the probability values of the candidate words into a mapping function, to obtain probability mapping values corresponding to the candidate words, wherein the mapping function is configured for mapping the probability values into a specified range of probability mapping values, and within the specified range, adjusting a statistical dispersion of the probability mapping values into an expectation, wherein the probability values and the probability mapping values are bijective; performing rounding processing to the probability mapping values, to obtain quantized probability mapping values; and according to the quantized probability mapping values, determining an order of the candidate words, to output a list of candidate words in order.

Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.