Abstract: A selective protection circuit includes a current-limiting module and a control module, where the current-limiting module includes a switch unit, and the switch unit includes a first end, a second end, and a control end; the first end is connected to a positive electrode of a bus voltage of an HVDC power supply, and the second end is connected to a positive electrode of a power supply of a voltage pre-regulator circuit in a load branch connected to the current-limiting module; the control end is connected to the control module; and the control module is configured to output a control signal to the control end when a value of a total current flowing through the switch unit is greater than or equal to a preset threshold, so as to switch off the switch unit.

Abstract: The present invention provides an actually-measured marine environment data assimilation method based on sequence recursive filtering three-dimensional variation. The method includes: preprocessing actually-measured marine environment data; calculating a target function value; calculating a gradient value of a target function; calculating a minimum value of the target function; extracting space multi-scale information from the actually-measured data; and updating background field data to form a final data assimilation analysis field. The present invention improves the traditional recursive filtering three-dimensional variation method, and sequentially assimilates information with different scales, thereby effectively overcoming the problem that multi-scale information cannot be effectively extracted by a traditional three-dimensional variation method.

Abstract: A high voltage direct current soft-start circuit is provided in which a first end of a first switch is connected to a negative electrode of a high voltage direct current, a first end of a second switch is connected to the negative electrode of the high voltage direct current, and a drive control unit is connected separately to the first switch, the second switch, and a load, where a first part of a connector is connected to the drive control unit, and upon power-on, the first part of the connector communicates with a second part of the connector, to trigger the drive control unit to drive the first switch to turn on. The drive control unit delays a preset time after driving the first switch to turn on, drives the second switch to turn on, and drives the load to start after the second switch is turned on.

Abstract: Disclosed is a resistive random access memory, comprising a substrate, an insulating layer, a bottom electrode, a resistive material film, and a top electrode in an order from bottom to top, wherein the resistive material film is a four-layer structure composed of a same metal oxide; and the four layers in the four-layer structure from bottom to top have resistance values which are increased one after another by more than 10 times, oxygen concentrations which are increased one after another and thickness which are decreased one after another. The present invention may achieve complete formation-rupture of oxygen vacancy conductive filaments (CF) in each layer by dividing the resistive material film of the same metal oxide into four layers according to the different oxygen concentrations, so as to control accurately the resistance values, so that 2-bit storage with high uniformity is achieved.

Abstract: Disclosed is a resistive random access memory, comprising a substrate, an insulating layer, a bottom electrode, a resistive material film, and a top electrode in an order from bottom to top, wherein the resistive material film is a four-layer structure composed of a same metal oxide; and the four layers in the four-layer structure from bottom to top have resistance values which are increased one after another by more than 10 times, oxygen concentrations which are increased one after another and thickness which are decreased one after another. The present invention may achieve complete formation-rupture of oxygen vacancy conductive filaments (CF) in each layer by dividing the resistive material film of the same metal oxide into four layers according to the different oxygen concentrations, so as to control accurately the resistance values, so that 2-bit storage with high uniformity is achieved.

Abstract: A method for forming a magnetic sensor includes: forming a hard mask film on a tantalum nitride film; forming a patterned photoresist layer on the hard mask film; implementing an isotropic dry etching process to the hard mask film by taking the photoresist layer as a mask, so as to form a hard mask layer; and implementing an etching process to the tantalum nitride film and the magnetic film by taking the hard mask layer as a mask, so as to form a tantalum nitride layer and a magnetic resistive layer. As an isotropic dry etching process is implemented to the hard mask film, the hard mask film located which is above the other sidewalls and is not used for forming the magnetic sensor can be effectively removed. In addition, shadow effect will not take place, thus dimension of the magnetic sensor formed is able to be easily controlled.

Abstract: A high voltage direct current soft-start circuit is provided in which a first end of a first switch is connected to a negative electrode of a high voltage direct current, a first end of a second switch is connected to the negative electrode of the high voltage direct current, and a drive control unit is connected separately to the first switch, the second switch, and a load, where a first part of a connector is connected to the drive control unit, and upon power-on, the first part of the connector communicates with a second part of the connector, to trigger the drive control unit to drive the first switch to turn on. The drive control unit delays a preset time after driving the first switch to turn on, drives the second switch to turn on, and drives the load to start after the second switch is turned on.

Abstract: A method of forming a micro-electro-mechanical systems (MEMS) device includes: providing a substrate; forming a tantalum nitride (TaN) layer on the substrate; forming a dielectric anti-reflective coating (DARC) layer on the TaN layer; coating photoresist on the DARC layer and etching the DARC: and TaN layers to form a trench; performing intensified ashing and wet cleaning processes to remove the photoresist and the DARC layer. The DARC layer can prevent the formation of tantalum-containing polymeric substances from a reaction between the TaN layer and the photoresist during the intensified ashing process.

Abstract: A method of forming a micro-electro-mechanical systems device includes: providing a substrate; sequentially forming a tantalum nitride (TaN) layer and a hard mask layer on the substrate, the hard mask layer having a thickness larger than a thickness of the TaN layer; coating photoresist on the hard mask layer, patterning the photoresist and performing a first etching process on the hard mask layer with the photoresist serving as a mask to form an opening in the hard mask layer, wherein a portion of the thickness of the hard mask layer is remained under the opening; removing the photoresist; and performing a second etching process to remove the portion of the thickness of the hard mask layer under the opening as well as a portion of the TaN layer under the opening to form a trench.

Abstract: A method of forming a micro-electro-mechanical systems (MEMS) device includes: providing a substrate; forming a tantalum nitride (TaN) layer on the substrate; forming a dielectric anti-reflective coating (DARC) layer on the TaN layer; coating photoresist on the DARC layer and etching the DARC: and TaN layers to form a trench; performing intensified ashing and wet cleaning processes to remove the photoresist and the DARC layer. The DARC layer can prevent the formation of tantalum-containing polymeric substances from a reaction between the TaN layer and the photoresist during the intensified ashing process.

Abstract: A method of forming a micro-electro-mechanical systems device includes: providing a substrate; sequentially forming a tantalum nitride (TaN) layer and a hard mask layer on the substrate, the hard mask layer having a thickness larger than a thickness of the TaN layer; coating photoresist on the hard mask layer, patterning the photoresist and performing a first etching process on the hard mask layer with the photoresist serving as a mask to form an opening in the hard mask layer, wherein a portion of the thickness of the hard mask layer is remained under the opening; removing the photoresist; and performing a second etching process to remove the portion of the thickness of the hard mask layer under the opening as well as a portion of the TaN layer under the opening to form a trench.

Abstract: A method for forming a magnetic sensor includes: forming a hard mask film on a tantalum nitride film; forming a patterned photoresist layer on the hard mask film; implementing an isotropic dry etching process to the hard mask film by taking the photoresist layer as a mask, so as to form a hard mask layer; and implementing an etching process to the tantalum nitride film and the magnetic film by taking the hard mask layer as a mask, so as to form a tantalum nitride layer and a magnetic resistive layer. As an isotropic dry etching process is implemented to the hard mask film, the hard mask film located which is above the other sidewalls and is not used for forming the magnetic sensor can be effectively removed. In addition, shadow effect will not take place, thus dimension of the magnetic sensor formed is able to be easily controlled.

Abstract: A portable shower stall suitable for a wheelchair-bound person to bathe with the help of an assistant, comprising of a self-supporting flexible shower base, a modular shower enclosure standing freely within the shower base, a hand-held sprayer connected to a kitchen faucet via hose, and a pump with puddle scoop attachment that drains the shower base. One sidewall of the shower base can be pressed down and fastened to the shower base bottom to facilitate wheelchair access, but it can be released and restored to upright position for water retention. Shower enclosure consists of two identical bi-fold shower screens clamping to each other to form a splash-proof rectangle. However, one or both screens can be removed from the shower base to provide access to the wheelchair-bound person.

Abstract: A portable shower stall suitable for a wheelchair-bound person to bathe with the help of an assistant, comprising of a self-supporting flexible shower base, a modular shower enclosure standing freely within the shower base, a hand-held sprayer connected to a kitchen faucet via hose, and a pump with puddle scoop attachment that drains the shower base. One sidewall of the shower base can be pressed down and fastened to the shower base bottom to facilitate wheelchair access, but it can be released and restored to upright position for water retention. Shower enclosure consists of two identical bi-fold shower screens clamping to each other to form a splash-proof rectangle. However, one or both screens can be removed from the shower base to provide access to the wheelchair-bound person.