Abstract: The present invention relates to a lateral high-voltage device. The device includes a dielectric trench region. A doping-overlapping structure with different doping types alternating mode is provided at least below, on a left side of, or on a right side of the dielectric trench region. The device also includes a dielectric layer, a body field plate, a polysilicon gate, a gate oxide layer, a first N-type heavy doping region, a second N-type heavy doping region, a P-type heavy doping region, a P-well region, the first N-type doping pillar, the second N-type doping pillar, the third N-type doping pillar, the first P-type doping pillar, and the second P-type doping pillar. The invention adopts a dielectric trench region in the drift region to keep the breakdown voltage BV of the device while reducing the surface area of the device, and effectively reducing the device's specific On-Resistance RON,sp.