Patents by Inventor Zhenyang Xia

Zhenyang Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Compact hyperspectral spectrometers based on semiconductor nanomembranes
    Patent number: 11894399
    Abstract: Hyperspectral resonant cavity imaging spectrometers and imaging systems incorporating the resonant cavity spectrometers are provided. The spectrometers include an array of photodetectors based on photosensitive semiconductor nanomembranes disposed between two dielectric spacers, each of the dielectric spacers having a thickness gradient along a lateral direction, such that the resonant cavity height differs for different photodetectors in the array.
    Type: Grant
    Filed: March 2, 2021
    Date of Patent: February 6, 2024
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Zhenyang Xia, Ming Zhou, Qiaoqiang Gan, Zongfu Yu
  • COMPACT HYPERSPECTRAL SPECTROMETERS BASED ON SEMICONDUCTOR NANOMEMBRANES
    Publication number: 20220285411
    Abstract: Hyperspectral resonant cavity imaging spectrometers and imaging systems incorporating the resonant cavity spectrometers are provided. The spectrometers include an array of photodetectors based on photosensitive semiconductor nanomembranes disposed between two dielectric spacers, each of the dielectric spacers having a thickness gradient along a lateral direction, such that the resonant cavity height differs for different photodetectors in the array.
    Type: Application
    Filed: March 2, 2021
    Publication date: September 8, 2022
    Inventors: Zhenqiang Ma, Zhenyang Xia, Ming Zhou, Qiaoqiang Gan, Zongfu Yu
  • HIGH-SPEED ULTRATHIN SILICON-ON-INSULATOR INFRARED BOLOMETERS AND IMAGERS
    Publication number: 20210389183
    Abstract: In one aspect, the invention provides a nanobolometer cell including a base layer, a dielectric spacer layer above and adjacent to the base layer, an ultrathin silicon film above and adjacent to the spacer layer, and at least one plasmonic optical antenna resonator above and adjacent to the silicon film.
    Type: Application
    Filed: November 8, 2019
    Publication date: December 16, 2021
    Applicants: Yale University, Wisconsin Alumni Research Foundation
    Inventors: Qiushi Guo, Cheng Li, Fengnian Xia, Zhenqiang Ma, Dong Liu, Zhenyang Xia
  • SEMICONDUCTOR MEMBRANE ENABLED HARD X-RAY DETECTORS
    Publication number: 20210055434
    Abstract: Micrometer-scale x-ray photodetectors that utilize a flexible array of photodiodes wrapped around the circumference of a scintillator core are provided. The photodetectors use dense and flexible pixelated arrays of photodiodes disposed around the circumference of a crystalline scintillator to provide highly compact photodetectors with high spatial, temporal, and energy resolution.
    Type: Application
    Filed: August 26, 2020
    Publication date: February 25, 2021
    Inventors: Zhenqiang Ma, Zhenyang Xia
  • Optoelectronic devices based on thin single-crystalline semiconductor films and non-epitaxial optical cavities
    Patent number: 10777700
    Abstract: Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.
    Type: Grant
    Filed: June 2, 2017
    Date of Patent: September 15, 2020
    Assignees: Wisconsin Alumni Research Foundation, The Research Foundation for the State University of New York
    Inventors: Zhenqiang Ma, Zhenyang Xia, Qiaoqiang Gan, Haomin Song, Zongfu Yu, Ming Zhou
  • SEMICONDUCTOR MEMBRANE ENABLED HARD X-RAY DETECTORS
    Publication number: 20200041666
    Abstract: Micrometer-scale x-ray photodetectors that utilize a flexible array of photodiodes wrapped around the circumference of a scintillator core are provided. The photodetectors use dense and flexible pixelated arrays of photodiodes disposed around the circumference of a crystalline scintillator to provide highly compact photodetectors with high spatial, temporal, and energy resolution.
    Type: Application
    Filed: August 6, 2018
    Publication date: February 6, 2020
    Inventors: Zhenqiang Ma, Zhenyang Xia
  • OPTOELECTRONIC DEVICES BASED ON THIN SINGLE-CRYSTALLINE SEMICONDUCTOR FILMS AND NON-EPITAXIAL OPTICAL CAVITIES
    Publication number: 20180351024
    Abstract: Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.
    Type: Application
    Filed: June 2, 2017
    Publication date: December 6, 2018
    Inventors: Zhenqiang Ma, Zhenyang Xia, Qiaoqiang Gan, Haomin Song, Zongfu Yu, Ming Zhou