Abstract: A personalized scene image processing method is provided for a terminal device. The method includes acquiring, according to a touch event triggered in a screen region of the terminal device, a trajectory of the touch event in the screen region; generating a virtual model, according to a projection of the trajectory of the touch event in a space coordinate system; reconstructing a model view of the virtual model mapped within a field of view of the terminal device, according to a position and posture of the terminal device in the space coordinate system; and overlaying a scene image acquired by the terminal device in the position and posture with the model view to obtain a personalized scene image.

Abstract: A personalized scene image processing method is provided for a terminal device. The method includes acquiring, according to a touch event triggered in a screen region of the terminal device, a trajectory of the touch event in the screen region; generating a virtual model, according to a projection of the trajectory of the touch event in a space coordinate system; reconstructing a model view of the virtual model mapped within a field of view of the terminal device, according to a position and posture of the terminal device in the space coordinate system; and overlaying a scene image acquired by the terminal device in the position and posture with the model view to obtain a personalized scene image.

Abstract: Semiconductor structures and methods for forming the same are provided.

Abstract: A semiconductor structure includes: a substrate; channel structures on the substrate, a channel structure of the channel structures including a plurality of channel layers stacked along a direction perpendicular to a surface of the substrate and a plurality of gate grooves between adjacent channel layers; gate structures spanning the channel structure, the gate structures being also in the plurality of gate grooves; source/drain regions on the substrate on two sides of the gates and the channel layers, the source/drain regions being in contact with sidewalls of a plurality of channel layers; and inner spacer layers between adjacent channel layers, and first dielectric layers between the inner spacer layers and the gate structures, the inner spacer layers being between the source/drain regions and the gate structures.

Abstract: Semiconductor structures and forming methods are disclosed. One form of a method includes: forming mask spacers on a base; patterning a target layer using the mask spacers as masks, to form discrete initial pattern layers, where the initial pattern layers extend along a lateral direction and grooves are formed between a longitudinal adjacent initial pattern layers; forming boundary defining grooves that penetrate through the initial pattern layers located at boundary positions of the target areas and cutting areas along the lateral direction; forming spacing layers filled into the grooves and the boundary defining grooves; and using the spacing layers located in boundary defining grooves and the spacing layers located in the grooves as stop layers along the lateral and the longitudinal directions respectively, etching the initial pattern layers located in the cutting areas, and using the remaining initial pattern layers located in the target areas as the target pattern layers.

Abstract: Semiconductor structures and fabrication methods thereof are provided. The method includes providing a substrate; forming a stacked material structure on the substrate; and forming trenches in the stacked material structure. Bottoms of the trenches are in the first material layer, the trenches are arranged along a first direction and form an initial stacked structure sequentially including an initial first layer, an initial second layer and an initial third layer. The method also includes etching the initial third layer to form transitional third layers arranged along a second direction perpendicular to the first direction; removing a portion of the initial first layer and a portion of the initial second layer of the initial stacked structure at two sides along the second direction to form a stacked structure including a first layer, a second layer and the transitional third layers; and forming a gate structure.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided in the present disclosure. The method includes providing a substrate, wherein the substrate includes a plurality of first regions to-be-etched extending along a first direction; a first region to-be-etched includes a central region and an edge region adjacent to each of two sides of the central region; and a material layer to-be-etched is on the substrate; forming a plurality of discrete initial mask structures on the material layer to-be-etched; etching initial mask structures at the edge region till a surface of the material layer to-be-etched is exposed to form a plurality of mask structures; using the plurality of mask structures as a mask, etching the material layer to-be-etched to form a plurality of discrete layers to-be-etched; and removing layers to-be-etched at the central region till a surface of the substrate is exposed.

Abstract: Semiconductor structures and fabrication methods thereof are provided. The method includes providing a substrate; forming a stacked material structure on the substrate; and forming trenches in the stacked material structure. Bottoms of the trenches are in the first material layer, the trenches are arranged along a first direction and form an initial stacked structure sequentially including an initial first layer, an initial second layer and an initial third layer. The method also includes etching the initial third layer to form transitional third layers arranged along a second direction perpendicular to the first direction; removing a portion of the initial first layer and a portion of the initial second layer of the initial stacked structure at two sides along the second direction to form a stacked structure including a first layer, a second layer and the transitional third layers; and forming a gate structure.

Abstract: A personalized scene image processing method is provided for a terminal device. The method includes acquiring, according to a touch event triggered in a screen region of the terminal device, a trajectory of the touch event in the screen region; generating a virtual model, according to a projection of the trajectory of the touch event in a space coordinate system; reconstructing a model view of the virtual model mapped within a field of view of the terminal device, according to a position and posture of the terminal device in the space coordinate system; and overlaying a scene image acquired by the terminal device in the position and posture with the model view to obtain a personalized scene image.