Abstract: A method includes forming first and second semiconductor fins and a gate structure over a substrate; forming a first and second source/drain epitaxy structures over the first and second semiconductor fins; forming an interlayer dielectric (ILD) layer over the first and second source/drain epitaxy structures; etching the gate structure and the ILD layer to form a trench; performing a first surface treatment to modify surfaces of a top portion and a bottom portion of the trench to NH-terminated; performing a second surface treatment to modify the surfaces of the top portion of the trench to N-terminated, while leaving the surfaces of the bottom portion of the trench being NH-terminated; and depositing a first dielectric layer in the trench, wherein the first dielectric layer has a higher deposition rate on the surfaces of the bottom portion of the trench than on the surfaces of the bottom portion of the trench.

Abstract: A system and method for tracing a net includes comparing an IC design against a marked portion of the IC design, and extracting a traced net that includes the marked portion from the IC design file. The method also includes displaying the traced net and storing at least one indicator along with information identifying the traced net.

Abstract: A system and method for tracing a net includes comparing an IC design against a marked portion of the IC design, and extracting a traced net that includes the marked portion from the IC design file. The method also includes displaying the traced net and storing at least one indicator along with information identifying the traced net.