Abstract: A method for manufacturing a thin film transistor is provided. The method includes: sequentially forming a semiconductor thin film, a patterned source-drain layer and a conductive thin film on a base substrate, performing a patterning process on the semiconductor thin film and the conductive thin film simultaneously to acquire an active layer and a protective electrode layer, and processing the protective electrode layer such that a portion of the protective electrode layer covering the source is insulated from a portion of the protective electrode layer covering the drain.

Abstract: A pixel defining structure includes a first pixel defining portion formed on a base substrate, the first pixel defining portion having a pixel opening, a bump pattern formed on the base substrate and located in the pixel opening, a gap being formed between the bump pattern and the first pixel defining portion, and a second pixel defining portion formed on a surface of the first pixel defining portion away from the base substrate.

Abstract: A method for transferring massive Micro-LED includes: providing a transfer plate including a base substrate, an insulation film on the base substrate and provided with recesses, and first metal bonding pads in the recesses; providing Micro-LED grains each provided with a second bonding metal at a backside of the Micro-LED gain; forming solder on the first metal bonding pad or the second metal bonding pad; placing the transfer plate and the Micro-LED gains into a chamber which contains solvent and has a temperature higher than a melting point of the solder, vibrating the chamber to enable the Micro-LED gains to fall into the recesses, thereby enabling the second metal bonding pads of the Micro-LED gains fallen in the recesses to be in contact with the first metal bonding pads in the recesses through the solder; and cooling down the transfer plate, thereby solidifying the solder and forming a Micro-LED substrate.