Abstract: An embodiment of the present invention provides a manufacturing method of an amorphous-silicon flat-panel X-ray sensor; the method reduces the number of mask plates to be used, simplifies the production processes, saves production costs, while also improving the product yield. The manufacturing method comprises: on a substrate, after a gate scan line is formed, forming a data line, a TFT switch element and a photosensitive element through one patterning process, wherein on the mask plate used in the patterning process, a region corresponding to a channel of the TFT switch element is semi-transmissive, whereas regions respectively corresponding to the data line, the photosensitive element and the portion of the TFT switch element other than the channel thereof are non-transmissive; thereafter, on the substrate formed with the TFT switch element and the photosensitive element, a passivation layer and a bias line are formed.

Abstract: A TFT flat sensor comprises pixel units each comprising: a common electrode and a common electrode insulating layer on a substrate, wherein a first via hole is provided in the common electrode insulating layer at a location corresponding to the common electrode; a gate electrode on the common electrode insulating layer; a first conductive film layer on the common electrode and the gate electrode wherein the first conductive film layer contacts the common electrode through a first via hole; a gate insulating layer, an active layer, a drain electrode and a source electrode, a second conductive film layer, a protection layer and a third conductive film layer on the first conductive film layer; a second via hole is provided in the protection layer at a location corresponding to the source electrode through which the third conductive film layer contacts the source electrode.

Abstract: Embodiments of the present invention disclose a sensor and a method for manufacturing the same, the sensor comprising a plurality of sensing units arranged in array, each of which comprises a thin film transistor device and a photodiode sensor device and the photodiode sensor device comprising: a receiving electrode connected with a drain of the thin film transistor device, a photodiode located on the receiving electrode and covering the thin film transistor device, a transparent electrode on the photodiode and a biasing line connected with the transparent electrode.

Abstract: A TFT-LCD assembly substrate comprises an array structure layer, comprising a plurality of first signal lines and a plurality of second signal lines. Adjacent first signal lines and adjacent second signal lines cross each other to define a plurality of combination pixel regions, and each of the combination pixel regions comprises two pixel regions juxtaposed along a direction of the first signal line, and there are a thin film transistor and a pixel electrode formed in one pixel region of the two pixel regions and there is a common electrode formed in the other pixel region.

Abstract: A thin film transistor (TFT) array substrate, a manufacturing method thereof and a display device are provided. The manufacturing method comprises: forming a first passivation layer (8) on a substrate (1), and forming a board wiring PAD-region via hole (11) in the first passivation layer (8) above the board wiring PAD region (11) through a first patterning process; forming a second passivation layer (16) on the substrate (1) formed with the board wiring PAD-region via hole (11), and forming a pixel-region via hole (15) in the first passivation layer (8) and the second passivation layer (16) above the display electrode (7) through a second patterning process in such a way that the pixel-region via hole (15) has a top-size smaller than its bottom-size; and applying a transparent conductive layer on the substrate (1) formed with the pixel-region via hole (15) to form a second display electrode.

Abstract: An etching time detection means and an etching time detection method for an etching device. The detection means comprises: a light wave emitter fixed on one substrate of the etching device, a light wave receiver fixed on another substrate and opposed to the light wave emitter, a detection system communicated with the light wave emitter and the light wave receiver for receiving light intensity signals and calculating etching time. With the detection means and the detection method, the automatical detection of etching time can be achieved and the deviation caused by visual observation can be effectively avoided.

Abstract: The present invention relates to a method and a device for resuming download. The method for resuming download comprises: converting a file incompletely downloaded by a first download tool to a file identifiable to a second download tool, so that the second download tool resumes downloading the incompletely-downloaded file, wherein the first download tool and the second download tool are different download tools. The present invention implements relay download of different download tools, and can be applied to file download, so as to avoid wasting network resources and time of users.

Abstract: The present invention relates to a method and device for allocating a browser process. The method comprises: first, obtaining data related to a current system operating environment, and then allocating a browser process based on the data. The present invention allocates the browser process intelligently according to the current system operating environment, maximally improving the performance in use of the browser, and can be applied in any kind of electronic devices.

Abstract: Manufacturing an array substrate includes forming data and gate lines which cross and a gate electrode on a substrate. The data line is discontinuously disposed to be separated from the gate line, or the gate line is discontinuously disposed to be separated from the data line. Active and gate insulating layers including bridge and source electrode vias are formed on the substrate. The bridge vias correspond to adjacent discontinuous sections of the data line or the gate line. The source electrode via corresponds to the data line. Pixel, source, and drain electrodes and a bridge line are formed on the substrate. The pixel electrode and the drain electrode are integral. The source electrode is connected to the data line through the source electrode via. The bridge line connects adjacent discontinuous sections of the data line or adjacent discontinuous sections of the gate line through bridge vias.

Abstract: A thin film transistor liquid crystal display (TFT-LCD) array substrate and a method for forming the same. The thin film transistor liquid crystal display (TFT-LCD) device, comprising gate lines and data lines that intersecting with each other to define pixel regions, wherein a pixel electrode and a thin film transistor are formed in each of the pixel regions, and wherein the data lines each have a mirror-symmetry structure so that coupling capacitance between one data line and the pixel electrodes in an upper adjacent pixel region and a lower pixel region that are adjacent changes oppositely.

Abstract: A manufacturing method of an array substrate comprises forming gate lines, data lines, pixel electrodes, and gate electrodes, active layer members, source electrodes, drain electrodes of thin film transistors (TFTs) in pixel units in a display region and forming the gate lines and the data lines in a pad region. A process of forming the data lines, the active layer members, the source electrodes and the drain electrodes in the display region and simultaneously forming the data lines in the pad region is performed.

Abstract: An array substrate comprises a substrate provided with a circuit pattern and covering layers that cover the upper surfaces and side surfaces of respective portions of the circuit pattern.

Abstract: Manufacturing an array substrate includes forming data and gate lines which cross and a gate electrode on a substrate. The data line is discontinuously disposed to be separated from the gate line, or the gate line is discontinuously disposed to be separated from the data line. Active and gate insulating layers including bridge and source electrode vias are formed on the substrate. The bridge vias correspond to adjacent discontinuous sections of the data line or the gate line. The source electrode via corresponds to the data line. Pixel, source, and drain electrodes and a bridge line are formed on the substrate. The pixel electrode and the drain electrode are integral. The source electrode is connected to the data line through the source electrode via. The bridge line connects adjacent discontinuous sections of the data line or adjacent discontinuous sections of the gate line through bridge vias.

Abstract: An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer.

Abstract: A method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate comprises: forming a gate line and a gate electrode on a base substrate, and then depositing a gate insulating layer on the base substrate; forming an active layer, a data line, a source electrode, and a drain electrode on the gate insulating layer, and removing the gate insulating layer in the region other than the regions of the active layer, the data line, the source electrode and the drain electrode; forming a first via hole, a second via hole and a third via hole in a photoresist layer by an exposing and developing process; and forming a pixel electrode, a first connection electrode and a second connection electrode on the photosensitive resin layer. The pixel electrode is connected with the drain electrode through the third via hole.

Abstract: A method of manufacturing an array substrate comprising: forming a data line and a gate line which are crossed with each other and a gate electrode on a base substrate, and the data line is discontinuously disposed so as to be separated from the gate line or the gate line is discontinuously disposed so as to be separated from the data line; forming an active layer and a gate insulating layer including bridge via holes and a source electrode via hole on the base substrate, and the bridge via holes are located at positions respectively corresponding to adjacent discontinuous sections of the data line or adjacent discontinuous sections of the gate line, and the source electrode via hole is located at a position corresponding to the data line; and forming a pixel electrode, a source electrode, a drain electrode and a bridge line on the base substrate, and the pixel electrode and the drain electrode are formed integrally, and the source electrode is connected to the data line through the source electrode via hole,

Abstract: The present invention relates to a method of manufacturing an array substrate of TFT-LCD. The method includes the following steps. In step 1, a gate metal thin film is deposited on a substrate and patterned into gate electrodes and gate lines by a first patterning process. In step 2, a gate insulation layer, a semiconductor layer and a barrier layer are subsequently deposited on the resultant structure of step 1 and are patterned into gate insulation layer pattern, semiconductor layer pattern and barrier layer pattern by a second patterning process, wherein the barrier layer is used for preventing the semiconductor layer at the TFT channel from being etched. In step 3, an ohmic contact layer, a transparent conductive layer, a source drain metal layer and a passivation layer are subsequently deposited on the resultant structure of step 2, and are patterned into ohmic contact layer pattern, pixel electrodes, data lines, source electrodes, drain electrodes and passivation layer pattern in a patterning process.

Abstract: An array substrate is provided and it comprises a base substrate and data lines and gate lines that crossed with one another to define pixel units on the base substrate. Each pixel unit comprises a pixel electrode and a thin film transistor (TFT) switch, and the TFT switch comprises a gate electrode, a source electrode, a drain electrode and an active layer. A gate insulation layer is provided between the gate electrode and the active layer, and the gate insulation layer comprises a nontransparent insulation layer.

Abstract: Embodiments of the invention disclose an array substrate and a manufacturing method thereof and a liquid crystal display. In the array substrate, an additional electrode is formed above a gate line, the additional electrode and the gate line are spaced from each other by a gate insulation layer, and the additional electrode is connected electrically with the common electrode line; pixel electrode extends to over the additional electrode and is overlapped with the additional electrode, the overlapped portion of the pixel electrode and both the additional electrode and the common electrode line forms a storage capacitor. The liquid crystal display according to the embodiment of the invention comprises the above array substrate.

Abstract: A magnetron sputtering apparatus comprising: a deposition chamber; a processing chamber in communication with the deposition chamber, wherein a target area composed of targets is located at the place where the processing chamber is connected with the deposition chamber; a transfer chamber provided adjacent to the processing chamber, wherein a first gas-tight gate is provided on a wall of the transfer chamber, the first gas-tight gate being opened or closed so as to control the vacuum degree in the transfer chamber and to replace the targets; a transfer device which is provided in the processing chamber and/or the transfer chamber, transfers the target between the transfer chamber and the processing chamber via a second gas-tight gate provided on the adjacent walls of the transfer chamber and the processing chamber for replacement when the transfer chamber is in a set vacuum degree state.