Abstract: An InN nanorod epitaxial wafer grown on an aluminum foil substrate (1) sequentially comprises the aluminum foil substrate (1), an amorphous aluminum oxide layer (2), an AlN layer (3) and an InN nanorod layer, (4) from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN, where the substrate temperature is 400-700° C., the pressure of a reaction chamber is 4.0-10.0×10?5 Torr and the beam ratio of V/III is 20-40.

Abstract: An InN nanorod epitaxial wafer grown on an aluminum foil substrate (1) sequentially comprises the aluminum foil substrate (1), an amorphous aluminum oxide layer (2), an AlN layer (3) and an InN nanorod layer, (4) from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN. where the substrate temperature is 400-700° C., the pressure of a reaction chamber is 4.0-10.0×10?5 Torr and the beam ratio of V/III is 20-40.

Abstract: Disclosed is a heterojunction solar cell with a hole transport layer. The solar cell includes a bottom electrode, a GaAs substrate, an InGaAs epitaxial layer, a hole transport layer, a molybdenum disulfide layer and a top electrode in order from bottom to top; the hole transport layer is a 2,2?,7,7?-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9?-spirobifluorene film. Also disclosed is a preparation method of the heterojunction solar cell with a hole transport layer. The heterojunction solar cell of the present invention not only has simple preparation process and low process cost, but also has high photoelectric conversion efficiency, and the preparation method is an effective method for preparing a novel heterojunction solar cell.