Abstract: A method of analyzing completion of seasoning of semiconductor processing chambers may include training a model using seasoning cycle characteristics data obtained from existing semiconductor processing chambers. A supervised learning process may label the characteristics data based on expert determined identify seasoning completion and may optionally label the characteristics data based on chamber open event information or preventive maintenance information. The trained model may be used to characterize another chamber during seasoning to determine whether seasoning is completed and/or when or how long or how many seasoning cycles may be performed until seasoning is complete.

Abstract: A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the mea

Abstract: A non-transitory computer readable medium to thermally adjust a chamber component is disclosed therein. The non-transitory computer readable medium includes instructions that when executed cause a plurality of operations to be conducted. The operations include sensing a first temperature of the chamber component within a semiconductor processing chamber, comparing the first temperature to a first set-point of the chamber component, and adjusting a purge gas flowrate of a purge gas supplied to a portion of the processing chamber. The plurality of operations include sensing a second temperature of a reflector component in the portion of the semiconductor processing chamber, comparing the second temperature of the reflector component to a second set-point of the reflector component, and initiating a reflector cooling operation within the reflector component when the second temperature exceeds the second set-point.

Abstract: A method and apparatus for virtually sensing a temperature of a hardware component of semiconductor processing chamber are disclosed. In one or more embodiments, a method of operation for a processing chamber suitable for use in semiconductor manufacturing includes receiving a process recipe for a manufacturing process and monitoring a first temperature of a first hardware component of the processing chamber using a sensor. The method further includes synthesizing, using a model of the processing chamber, a first virtual temperature of a second hardware component of the processing chamber based on the received process recipe and the first temperature of the first hardware component.

Abstract: The present disclosure relates to chamber kits, systems, and methods for calibrating temperature sensors for semiconductor manufacturing. In one or more embodiments, a chamber kit for processing chambers applicable for semiconductor manufacturing includes a plate formed of a transparent material. The plate includes an opening formed in an outer face of the plate. The chamber kit includes a first calibration substrate positioned at least partially in the opening of the plate, and the first calibration substrate is formed of a first material. The chamber kit includes a second calibration substrate positioned at least partially in the opening of the plate, and the second calibration substrate is formed of a second material that is different than the first material.

Abstract: Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes an inner region having a pattern formed in a top surface thereof, the pattern including a plurality of substrate support features separated by a plurality of venting channels. The susceptor includes a rim surrounding and coupled to the inner region, wherein the inner region is recessed relative to the rim to form a recessed pocket configured to receive a substrate. The susceptor includes a plurality of bumps extending radially inward from an inner diameter of the rim, the plurality of bumps configured to contact an outer edge of a substrate supported by the plurality of substrate support features for positioning the substrate within the recessed pocket.

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for lamp heating in process chambers used to process semiconductor substrates. The apparatus includes a lamp for use in a processing chamber, the lamp having a lamp envelope with an interior volume, a first end of the lamp envelope coupled to a base, a second end of the lamp envelope opposing the first end, a filament disposed within the interior volume, and a radiation shield proximate to the second end. In another embodiment, the lamp assembly has at least one lamp, the at least one lamp having a lamp envelope having an interior volume, a first end of the lamp envelope coupled to a base, a second end of the lamp envelope opposing the first end, a filament disposed within the interior volume, and a radiation shield proximate to the second end.

Abstract: Embodiments of the present disclosure relate to measuring systems, processing systems, and related apparatus and methods that include band gap materials for temperature measurement calibration. In one or more embodiments, a measurement system includes a substrate support assembly that includes an inner section and an outer section. The inner section includes a first face, a second face opposing the first face, one or more first support recesses formed in the first face, and one or more openings extending between the one or more first support recesses and the second face. The measurement system includes one or more calibration substrates sized and shaped for positioning at least partially in the one or more first support recesses. The measurement system includes a band edge calibration assembly that includes an energy source and a band edge detector.

Abstract: A process chamber is provided including a chamber body enclosing an interior volume and a substrate support assembly in the interior volume. The substrate support assembly includes a substrate support having a substrate receiving surface, an upper plate, and a lower plate, the upper plate positioned over the substrate support. The substrate support is positioned over and spaced apart from the lower plate.

Abstract: Described herein are a susceptor, processing chambers having the same, and method for substrate processing using the same. In one example, a susceptor for supporting a substrate during processing is provided. The susceptor has a disk shaped body that includes a rim circumscribing an inner region. The inner region is recessed to form a recessed pocket that is configured to receive a substrate. A plurality of bumps extend radially into the inner region that are configured to contact an outer edge of the substrate when the substrate is disposed in the recessed pocket. A venting region is defined within the inner region. The venting region is defined by a plurality of vent holes formed through the body. The venting region terminates at a radius originating from a centerline of the body that is at least 4.0 millimeter less than a radius defining an inner wall of the rim.

Abstract: A substrate support assembly is provided including: a susceptor assembly that includes an inner portion having an inner body, an outer rim disposed around the inner body, and a plurality of recessed portions, each recessed portion recessed relative to a lower surface of the inner body; and an outer portion positioned around the inner portion, the outer portion including an inner ledge. The outer rim of the inner portion is positioned on the inner ledge of the outer portion; and a first plurality of lift pins. Each lift pin of the first plurality of lift pins underlies one of the recessed portions of the inner portion of the susceptor assembly.

Abstract: The present disclosure relates to systems, apparatus, and methods for monitoring plate temperature for semiconductor manufacturing. In one or more embodiments, a system for processing substrates and applicable for semiconductor manufacturing includes a chamber body including one or more sidewalls. The system includes a lid and a window, the one or more sidewalls, the window, and the lid at least partially defining an internal volume. The system includes one or more heat sources configured to heat the internal volume, a substrate support disposed in the internal volume, and a first optical sensor configured to detect energy having a first wavelength that is less than 4.0 microns. The system includes a second optical sensor configured to detect energy having a second wavelength that is less than the first wavelength.

Abstract: A method of characterizing thermal processing chambers may include training a model using temperature rate-of-change data from existing thermal processing chambers. A supervised learning process may label the rate-of-change data based on deposition profiles on substrates. The trained model may be used to characterize another chamber to determine if the predicted performance will match the chambers used to train the model. An inert process using carrier gasses may be used to capture temperature data and derive rate-of-change data without requiring the actual deposition of an layer on the substrate. The rate-of-change data may be provided to the model, which may generate component-specific outputs that characterize how well the chamber is predicted to match either finger print condition of the chamber (match at different time) or match between different chambers.

Abstract: A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a front side and a back side opposite the front side, and a coating layer deposited on the susceptor substrate. The front side has a pocket configured to hold a wafer to be processed in a processing chamber, the pocket being textured with a first pattern. The back side is textured with a second pattern.

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

Abstract: The present disclosure relates to transfer chambers, systems, and related components and methods, for pre-heating and pre-cooling substrate transfer apparatus. In one or more embodiments, the transfer apparatus are pre-heated and pre-cooled in relation to transferring substrates for substrate processing operations as part of semiconductor manufacturing. In one or more embodiments, a transfer chamber applicable for use in semiconductor manufacturing includes an internal volume, one or more sidewalls at least partially defining the internal volume, and a transfer apparatus disposed in the internal volume. The transfer apparatus includes one or more links, one or more motors configured to pivot the one or more links, and one or more substrate holders coupled to the one or more links. The transfer chamber includes a window that includes a transparent material, and one or more heat sources configured to direct heat into the internal volume through the window.

Abstract: The present disclosure relates to overlapping substrate supports and pre-heat rings, and related process kits, processing chambers, methods, and components to facilitate process adjustability. In one or more embodiments, a substrate support applicable for use in semiconductor manufacturing includes a first side face and a second side face opposing the first side face. The first side face includes a support surface. The second side face includes a backside surface, and a first shoulder protruding relative to the backside surface. The first shoulder is disposed outwardly of the backside surface. The substrate support includes an arcuate outer face extending between the first side face and the second side face.