Abstract: Embodiments of the disclosure provided herein include an apparatus and method for lamp heating in process chambers used to process semiconductor substrates. The apparatus includes a lamp for use in a processing chamber, the lamp having a lamp envelope with an interior volume, a first end of the lamp envelope coupled to a base, a second end of the lamp envelope opposing the first end, a filament disposed within the interior volume, and a radiation shield proximate to the second end. In another embodiment, the lamp assembly has at least one lamp, the at least one lamp having a lamp envelope having an interior volume, a first end of the lamp envelope coupled to a base, a second end of the lamp envelope opposing the first end, a filament disposed within the interior volume, and a radiation shield proximate to the second end.

Abstract: Embodiments of the present disclosure relate to measuring systems, processing systems, and related apparatus and methods that include band gap materials for temperature measurement calibration. In one or more embodiments, a measurement system includes a substrate support assembly that includes an inner section and an outer section. The inner section includes a first face, a second face opposing the first face, one or more first support recesses formed in the first face, and one or more openings extending between the one or more first support recesses and the second face. The measurement system includes one or more calibration substrates sized and shaped for positioning at least partially in the one or more first support recesses. The measurement system includes a band edge calibration assembly that includes an energy source and a band edge detector.

Abstract: A process chamber is provided including a chamber body enclosing an interior volume and a substrate support assembly in the interior volume. The substrate support assembly includes a substrate support having a substrate receiving surface, an upper plate, and a lower plate, the upper plate positioned over the substrate support. The substrate support is positioned over and spaced apart from the lower plate.

Abstract: Described herein are a susceptor, processing chambers having the same, and method for substrate processing using the same. In one example, a susceptor for supporting a substrate during processing is provided. The susceptor has a disk shaped body that includes a rim circumscribing an inner region. The inner region is recessed to form a recessed pocket that is configured to receive a substrate. A plurality of bumps extend radially into the inner region that are configured to contact an outer edge of the substrate when the substrate is disposed in the recessed pocket. A venting region is defined within the inner region. The venting region is defined by a plurality of vent holes formed through the body. The venting region terminates at a radius originating from a centerline of the body that is at least 4.0 millimeter less than a radius defining an inner wall of the rim.

Abstract: A substrate support assembly is provided including: a susceptor assembly that includes an inner portion having an inner body, an outer rim disposed around the inner body, and a plurality of recessed portions, each recessed portion recessed relative to a lower surface of the inner body; and an outer portion positioned around the inner portion, the outer portion including an inner ledge. The outer rim of the inner portion is positioned on the inner ledge of the outer portion; and a first plurality of lift pins. Each lift pin of the first plurality of lift pins underlies one of the recessed portions of the inner portion of the susceptor assembly.

Abstract: The present disclosure relates to systems, apparatus, and methods for monitoring plate temperature for semiconductor manufacturing. In one or more embodiments, a system for processing substrates and applicable for semiconductor manufacturing includes a chamber body including one or more sidewalls. The system includes a lid and a window, the one or more sidewalls, the window, and the lid at least partially defining an internal volume. The system includes one or more heat sources configured to heat the internal volume, a substrate support disposed in the internal volume, and a first optical sensor configured to detect energy having a first wavelength that is less than 4.0 microns. The system includes a second optical sensor configured to detect energy having a second wavelength that is less than the first wavelength.

Abstract: A method of characterizing thermal processing chambers may include training a model using temperature rate-of-change data from existing thermal processing chambers. A supervised learning process may label the rate-of-change data based on deposition profiles on substrates. The trained model may be used to characterize another chamber to determine if the predicted performance will match the chambers used to train the model. An inert process using carrier gasses may be used to capture temperature data and derive rate-of-change data without requiring the actual deposition of an layer on the substrate. The rate-of-change data may be provided to the model, which may generate component-specific outputs that characterize how well the chamber is predicted to match either finger print condition of the chamber (match at different time) or match between different chambers.

Abstract: A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a front side and a back side opposite the front side, and a coating layer deposited on the susceptor substrate. The front side has a pocket configured to hold a wafer to be processed in a processing chamber, the pocket being textured with a first pattern. The back side is textured with a second pattern.

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

Abstract: The present disclosure relates to transfer chambers, systems, and related components and methods, for pre-heating and pre-cooling substrate transfer apparatus. In one or more embodiments, the transfer apparatus are pre-heated and pre-cooled in relation to transferring substrates for substrate processing operations as part of semiconductor manufacturing. In one or more embodiments, a transfer chamber applicable for use in semiconductor manufacturing includes an internal volume, one or more sidewalls at least partially defining the internal volume, and a transfer apparatus disposed in the internal volume. The transfer apparatus includes one or more links, one or more motors configured to pivot the one or more links, and one or more substrate holders coupled to the one or more links. The transfer chamber includes a window that includes a transparent material, and one or more heat sources configured to direct heat into the internal volume through the window.

Abstract: The present disclosure relates to overlapping substrate supports and pre-heat rings, and related process kits, processing chambers, methods, and components to facilitate process adjustability. In one or more embodiments, a substrate support applicable for use in semiconductor manufacturing includes a first side face and a second side face opposing the first side face. The first side face includes a support surface. The second side face includes a backside surface, and a first shoulder protruding relative to the backside surface. The first shoulder is disposed outwardly of the backside surface. The substrate support includes an arcuate outer face extending between the first side face and the second side face.

Abstract: A susceptor for processing a substrate is provided including a base and a coating formed over the base. The base includes an outer rim having an inner edge, an outer edge, and a top connecting the inner edge to the outer edge; and an inner dish disposed inside the outer rim and coupled to the outer rim, the inner dish recessed from the top of the outer rim, the inner dish having a front side and an opposing back side. The coating has an outer surface that includes a first portion formed over the front side of the inner dish. The first portion of the outer surface of the coating includes a first region and a second region, the first region has a first average level of roughness, the second region has a second average level of roughness.

Abstract: An apparatus, method, and system for calibrating substrate positioning and placement on a substrate support in a process chamber via imaging. In an embodiment, a calibrating substrate is provided. The calibrating substrate generally includes a top surface having a plurality of first marking features and a at least one edge marking feature configured to be detectable relative to the remaining portions of the top surface of the body by an imaging apparatus.

Abstract: The present disclosure relates to methods and devices for processing substrates, suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes moving an isolation plate adjust one or more of: a height of the isolation plate, or an angle of the isolation plate such that the isolation plate moves to a non-parallel orientation relative to the substrate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate including guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

Abstract: A method and apparatus for processing substrates suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an isolation plate disposed above the substrate, the flowing the purge gas including diverting a portion of the purge gas below the isolation plate through a plurality of perforations in the isolation plate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate comprising guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

Abstract: Embodiments of the present disclosure generally relate to a pre-heat ring for use in a substrate processing chamber, and related methods. A pre-heat ring including black quartz (such as formed of black quartz) facilitates material properties that can facilitate heating benefits. In one or more embodiments, a pre-heat ring applicable for use in a semiconductor processing chamber includes one or more ring segments. The one or more ring segments include an inner edge defining an inner dimension, an outer edge defining an outer dimension, a first side surface between the inner edge and the outer edge, and a second side surface between the inner edge and the outer edge. The second side surface is opposing the first side surface. The one or more ring segments include black quartz. The black quartz includes silicon dioxide (SiO2) impregnated with undoped silicon (Si).

Abstract: Embodiments of the present disclosure relates to methods, systems, and apparatus for monitoring radiation output of lamps of processing chambers. In some embodiments, a system contains a plurality of lamps coupled to a chamber, and one or more radiation sensors. Each lamp is identified with one or more zones, the radiation sensors are coupled to the chamber, where each radiation sensor is proximal at least one lamp. A controller contains instructions that, when executed, cause: the radiation sensors to convey, to the controller, information associated with radiation emitted by the lamps; the controller to analyze the information, the analyzing including: for each zone: determining a function of radiation over time; and monitoring the function for a condition associated with lamp aging; and the controller to, based on the analyzing the information, perform at least one of the following: vary input power delivered to the lamps; and generate an alert.

Abstract: Embodiments of the present disclosure relate to substrate supports, transfer apparatus, processing chambers, and related components and methods, for substrate deformation (e.g., bowing). In one or more implementations, a substrate used in relation to the present disclosure can be deformed (e.g., bowed) before and/or during processing (such as epitaxial deposition). In one implementation, a substrate support applicable for use in semiconductor manufacturing operations includes a support body. The support body includes an outer surface, a recessed surface that is recessed relative to the outer surface, and a pocket surface between the outer surface and the recessed surface. The recessed surface and the pocket surface at least partially define a pocket of the support body. The support body includes a plurality of supports protruding relative to the recessed surface. The substrate support includes a barrier interfacing with the plurality of supports. The barrier includes a plurality of barrier supports.

Abstract: The present disclosure relates to transfer apparatus, and related components and methods, for transferring substrates in relation to substrate processing operations for semiconductor manufacturing. In one implementation, a transfer apparatus for moving a substrate in relation to semiconductor manufacturing includes a body, and a plurality of substrate supports inserted at least partially into the body. Each of the plurality of substrate supports includes an inner segment, and one or more fins extending outwardly relative to the inner segment. Each of the inner segment and the one or more fins includes silicon carbide (SiC).

Abstract: Embodiments of the present disclosure generally relate to apparatus and systems for in-situ film growth rate monitoring and include a system to monitor film growth on a substrate including a light source, a collimator, a dichroic mirror, and a filter all along a propagation path and in optical communication along the propagation path. The propagation path splits into a first sub-path and second sub-path at the dichroic mirror. The first sub-path is directed to a pyrometer, and the second sub-path is directed to a spectrometer.