Abstract: Embodiments of the present invention relate to blocks for gas activation, related substrate processing chambers, process kits, and methods. In some embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body at least partially defining an internal volume, one or more heat sources operable to heat the internal volume, and a substrate support disposed in the internal volume. The processing chamber further includes one or more inlet openings configured to direct a gas across a gas flow path over the substrate support and to one or more exhaust outlets and a process kit disposed in the internal volume. The process kit includes a first flow guide block and a second flow guide block disposed opposite the first flow guide block with respect to the gas flow path. The first flow guide block and the second flow guide block respectively include one or more opaque outer surfaces.

Abstract: In one implementation, a method of monitoring film selectivity on a substrate, comprises: generating light from a light source; collimating the light from the light source to form a collimated beam; reflecting the collimated beam off of a surface to be measured to produce a reflected beam; splitting the reflected beam with a dichroic mirror, wherein the reflected beam splits into a first beam and a second beam; receiving, by a pyrometer, the first beam from the dichroic mirror; receiving, by a spectrometer, the second beam from the dichroic mirror; and analyzing data derived from the pyrometer and the spectrometer to determine the film selectivity the surface to be measured.

Abstract: Embodiments of the present disclosure relate to substrate processing systems, methods, and related apparatus and chambers for detecting processing shifts. In one or more embodiments, a system for processing substrates includes a chamber body. The system includes one or more heat sources operable to heat a processing volume, a substrate support disposed in the processing volume, and a sensor operable to measure an emissivity in the processing volume. The system includes a controller including instructions that, when executed by a processor, cause a plurality of operations to be conducted. The plurality of operations include analyzing the measured emissivity for a time period. The analyzing includes generating a signal profile of the measured emissivity over the time period. The plurality of operations include detecting a shift in the signal profile along a shift section of the signal profile and adjusting a process parameter in response to the detection of the shift.

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

Abstract: Embodiments of the present disclosure generally relate to compositions for use in a substrate processing chamber, and related methods. In one or more embodiments, a component includes a body having a composition. The composition comprising a mixture of silicon carbide (SiC) particles suspended in quartz.

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the mea

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.

Abstract: A method and apparatus for processing substrates suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an isolation plate disposed above the substrate, the flowing the purge gas including diverting a portion of the purge gas below the isolation plate through a plurality of perforations in the isolation plate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate comprising guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

Abstract: In one or more embodiments, a semiconductor processing kit includes a reflector assembly. The reflector assembly configured to support one or more sensing devices therein. The reflector assembly includes a body having a top surface and a volume at least partially defined by an inner surface and an outer surface. The reflector assembly further includes a baffle and a fluid channel disposed within the baffle. The fluid channel is configured to flow a fluid to adjust a temperature of the one or more sensing devices. A ring is disposed on the top surface. The ring is configured to reduce a flow of a fluid into the volume. A reflector is concentrically disposed radially outward of the outer surface and creates a gap that allows the fluid to partially flow between the inner surface of the reflector and the outer surface.

Abstract: The present disclosure relates to semiconductor processing chambers, and more particularly, to fin structures that facilitate growth rates and process uniformity. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes one or more gas inlets operable to flow a gas into an internal volume of the processing chamber and a substrate support disposed in the internal volume. The processing chamber includes a plate apparatus disposed in the internal volume and above the substrate support. The plate apparatus includes a plate, and one or more fins disposed at least partially below the plate.

Abstract: The present disclosure relates to an auxiliary flow plate for process kits and semiconductor processing chambers, and related methods and flow guides. In one or more embodiments, a chamber kit includes a liner, a first plate, and a second plate. The liner includes an inner face, a first ledge disposed along the inner face, and a second ledge disposed along the inner face. The second ledge is spaced from the first ledge along the inner face. The first plate is sized and shaped to be disposed within the liner on the first ledge. The second plate is sized and shaped to be disposed within the liner on the second ledge.

Abstract: A processing system is provided that includes a process chamber. The process chamber includes: a chamber body disposed around a process volume and a substrate support. The processing system further includes a gas supply system coupled to a gas inlet of the process chamber, the gas supply system including: a main gas line connected with the gas inlet of the process chamber. The main gas line includes a first valve configured to open and provide a gas flow path through the main gas line to the process chamber. A first process gas line is connected with the main gas line at a first connection located upstream of the first valve. A second process gas line is connected with the main gas line at a second connection located upstream of the first valve. The main gas line can be separately purged upstream and downstream of the first valve.

Abstract: A method and apparatus for determining a growth rate on a semiconductor substrate is described herein. The apparatus is an optical sensor, such as an optical growth rate sensor. The optical sensor is positioned in an exhaust of a deposition chamber. The optical sensor is self-heated using one or more internal heating elements, such as a resistive heating element. The internal heating elements are configured to heat a sensor coupon. A film is formed on the sensor coupon by exhaust gases flowed through the exhaust and is correlated to film growth on a substrate within a process volume of the deposition chamber.

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Abstract: Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes an inner region having a pattern formed in a top surface thereof, the pattern including a plurality of substrate support features separated by a plurality of venting channels. The susceptor includes a rim surrounding and coupled to the inner region, wherein the inner region is recessed relative to the rim to form a recessed pocket configured to receive a substrate. The susceptor includes a plurality of bumps extending radially inward from an inner diameter of the rim, the plurality of bumps configured to contact an outer edge of a substrate supported by the plurality of substrate support features for positioning the substrate within the recessed pocket.

Abstract: An apparatus, method, and system for identifying and obtaining information related to a substrate support and/or a pre-heat ring in a process chamber via imaging and image processing. In an embodiment, a substrate support is provided. The substrate support generally includes a top surface configured to receive a substrate in a process chamber and a marking feature disposed on the top surface of the substrate support, the marking feature configured to be detectable by an imaging apparatus coupled to the process chamber to provide information related to the substrate support via imaging when the substrate support is disposed within the process chamber.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

Abstract: A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.

Abstract: A method of analyzing completion of seasoning of semiconductor processing chambers may include training a model using seasoning cycle characteristics data obtained from existing semiconductor processing chambers. A supervised learning process may label the characteristics data based on expert determined identify seasoning completion and may optionally label the characteristics data based on chamber open event information or preventive maintenance information. The trained model may be used to characterize another chamber during seasoning to determine whether seasoning is completed and/or when or how long or how many seasoning cycles may be performed until seasoning is complete.

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the mea